IRFY9120C
VDSS = 100V
ID = 5.3A
RDS(ON) = 0.69Ω
ΩΩ
Ω
All Semelab hermetically sealed products can be
processed in accordance with the requirements
of BS, CECC and JAN, JANTX, JANTXV and
JANS specifications.
Parameter Min. Typ. Max. Units
VDSS Drain – Source Breakdown Voltage 100 V
ID Continuous Drain Current 5.3 A
PD Power Dissipation 30 W
RDS(ON) Static Drain – Source On–State Resistance 0.69 Ω
CISS Input Capacitance 380 pF
Qg Total Gate Charge 16.3 nC
ttd(on) Turn–On Delay Time 60 ns
ttr Rise Time 100 ns
ttd(off) Turn–Off Delay Time 50 ns
t
f
Fall Time 70 ns
This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.u
k
.
Semel ab Plc rese rves the right to change test conditions, parameter limits and package dimensions without notice. Informat ion furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions dis cover e d in its use.
Generated
13-Sep-02
TO257AB (TO220M)
PINOUTS
1 – Gate 2 – Drain Case – Source
P-Channel MOS FET in
a Hermetically sealed
TO257AB Me tal Package.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Dimensions in mm (inches).
16.5 (0.65)
1.5(0.53)
10.6 (0.42)
12.70 (0.50 min)
2.54 (0.1)
BSC
3.70Dia. Nom
123
0.8
(0.03)
2.70
(0.106)
1.0
(0.039)
4.6 (0.18)
10.6 (0.42)
