T4-LDS-0263, Rev. 1 (120784) ©2012 Microsemi Corporation Page 1 of 7
JANS_2N3700
RADIATION HARDENED LOW POWER
NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/391
Quali f i ed Lev els:
JANSM , J AN SD,
JANSP, JANSL,
JANSR and JANSF
DESCRIPTION
This NPN leaded metal device is RAD hard qu alified for hig h-reliability ap plications. Microsemi
als o offers nu merous other p r oduc ts to meet higher and lower power vol tage reg ulation
applications.
TO-18 (TO-206AA)
Package
Also available in:
UB pa ck age
(leaded)
JANS_2N3700UB
TO-39 (TO-205AD)
(leaded)
JANS_2N3019, 2N3019S
TO-46 (TO-206AB)
(leaded)
JANS_2N3057A
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 2N3700.
• RHA level JAN qual ifications per MIL-PRF-19500/391 (see part nomenclature for all options).
APPLICATIONS / BENE FITS
• Leaded TO-18 package.
• Lightweight.
• Low power.
• Military and other high-reliability applications.
MAXIMUM RATINGS @ TA = +25 oC unless otherwise noted.
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ and TSTG
-65 to +200
oC
Thermal Impedance Junction-to-Ambient
RӨJA
325
oC/W
Thermal Impedance Junction-to-Case
RӨJC
150
oC/W
Collector-Emitter Voltage
VCEO
80
V
Collector-Base Voltage
VCBO
140
V
Emitter-Base Voltage
VEBO
7.0
V
Collector Current
IC
1.0
A
Total Power Dissipation: @ T
A
= +25 oC (1)
@ TC = +25
o
C
(2)
P
D
0.5
1.0
W
Notes: 1. Derate linearly 2.85 mW/°C for TA ≥ +25 °C.
2. Derate linearly 10.3 mW/°C for TC ≥ +25 °C.
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JANS_2N3700
M ECHANICAL and PACKAGING
• CASE: Hermetically sealed, nickel plated kovar base, nickel cap.
• TERMINALS: Gold plate over nickel kovar.
• MARKING: Part number, date code, manufacturer’s ID, and serial number.
• WEIGHT: Appr o xima te ly 0.3 gr a ms.
• See P ackage Dimensions on last page.
PART NOMENCLATURE
JANSM 2N3700
Reliability Level
JANSM = 3K Rads (Si)
JANSD = 10K Rads (Si)
JANSP = 30K Rads (Si)
JANSL = 50K Rads (Si)
JANSR = 100K Rads (Si)
JANSF = 300K Rads (Si)
JEDEC type number
SYMBOL S & DEFI NITIONS
Symbol
Definition
f
frequency
IB
Base cur rent ( dc)
IE
Emitter current (dc)
TA
Ambient temperature
TC
Case temperature
VCB
Collector to base voltage (dc)
VCE
Collector to emitter vol tage (dc)
VEB
Emitter to base voltage (dc)
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JANS_2N3700
ELECTRI CAL CHARACTERISTICS @ TA = +25 °C, unles s otherwis e not ed
Paramete r s / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emit ter Breakdown C urrent
IC = 30 mA
V(BR)CEO 80 V
Collector-Base Cutoff Current
VCB = 140 V
ICBO 10 µA
Emitter-Base C utoff Current
VEB = 7 V
IEBO1 10 µA
Collector-Em itter Cutoff Current
VCE = 90 V
ICES 10 ηA
Emitter-Base C utoff Current
VEB = 5.0 V
IEBO2 10 ηA
ON CHARACTERISTICS (1)
Forward-Current Transfer Ratio
I
C
= 150 mA, V
CE
= 10 V
IC = 0.1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 500 mA, VCE = 10 V
IC = 1.0 A, VCE = 10 V
hFE
100
50
90
50
15
300
300
300
Collector-Emitter Saturation Voltage
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA VCE(sat)
0.2
0.5 V
Base-Emi tt er Satu r ation V oltage
I
C
= 150 mA, I
B
= 15 mA
V
BE(sat)
1.1
V
DYNAMIC CHARACTE RIST ICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Small-Signal Short -Circ uit F orward C urrent Transfer Rat io
hfe 80 400
IC = 1.0 mA, VCE = 5.0 V, f = 1.0 kHz
Magn itude of Smal l -Signa l Short -Circuit Forward C urrent
Trans fer Ratio
|hfe| 5.0 20
IC = 50 mA, VCE = 10 V , f = 2 0 MHz
O utput Capac itance
Cobo 12 pF
VCB = 10 V, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
I nput Cap acitance
Cibo 60 pF
VEB = 0.5 V, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz
(1) Pu l se Test: Pulse Width = 300 µs, duty cycle ≤ 2.0%.
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JANS_2N3700
ELECTRI CAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted (continued)
SAFE OPERATION AREA (See S OA gr aph below and MIL-STD-750, method 3053)
DC Te sts
TC = 2 5 °C, 1 c yc l e, t = 10 ms
Test 1
2N3700
V
CE
= 10 V
IC = 180 mA
Test 2
2N3700
V
CE
= 40 V
IC = 45 mA
Test 3
2N3700
V
CE
= 80 V
IC = 22.5 mA
VCE – COLLECTOR – EMITTER VOLTAGE – V
Max i mum Safe Operating Ar ea
I
C
– COLL ECTOR CURRENT - A
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JANS_2N3700
ELECTRI CAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted (continued)
POST RADI ATION ELECTRI CAL CHARACTERISTICS
Paramete r s / Test Conditions Symbol Min. Max. Unit
Collector to B ase Cutoff Current
ICBO 20 µA
V
CB
= 140 V
E mi tter t o Base Cutoff Cu r r ent
IEBO 20 µA
V
EB
= 7 V
Collector to E mi tter B r eakd own Vol tage
V(BR)CEO 80 V
I
C
= 30 mA
Collector-Emit ter Cut off Current
ICES 20 ηA
V
CE
= 90 V
Emitter-Base C utoff Current
IEBO 20 ηA
V
EB
= 5.0 V
Forward-Current Transfer Ratio (2)
[hFE]
I
C
= 150 mA, V
CE
= 10 V
IC = 0.1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 500 mA, VCE = 10 V
IC = 1 A, VCE = 10 V
[50]
[25]
[45]
[25]
[7.5]
300
300
300
Collector-Emitter Saturation Voltage
VCE(sat)
V
I
C
= 150 mA, I
B
= 15 mA
IC = 500 mA, IB = 50 mA
0.23
0.58
Base-Emi tt er Satu r ation V oltage
VBE(sat)
V
I
C
= 150 mA, I
B
= 15 mA
1.27
(2) See method 1019 of MIL-STD-750 for how to determine [hFE] by first calculating the delta (1/hFE) from the pre- and post-
radiation hFE. Notice the [hFE] is not the same as hFE and cannot be meas ured directly. The [hFE] value can never exceed
the pre-radiation minimu m hFE that it is based upon.
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JANS_2N3700
GRAPHS
TA (oC) Ambient
FIGURE 1
Temperature-Power D erating ( RӨJA)
Leads = .125 inch (3.175mm )
TC (oC) Case at base
FIGURE 2
Temperature-Power D erating ( RӨJC)
Maximum DC Operation Rating (W)
Maximum DC Operation Rating (W)
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JANS_2N3700
PACKAGE DIM ENSIONS
NOTES:
1. Dimension are in i nches.
2. Millimeters are given for general information only.
3. Beyond r (radius ) maximum, TH shall be held for a m inimum length of .011 inch ( 0.28 m m).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) belo w seating plan e shall be within .007 in ch (0.18 mm)
radius of true position (TP) at maximum material condition (MMC) relati ve to tab at MMC. The device may be measured by
direct methods or by the gauge and gauging procedure shown in figure 2.
7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minim um. Diameter is uncontroll ed in L1
and beyond LL minimum.
8. All three leads.
9. The collector shall be internally connected to the case.
10. Dimension r (radius) applies to both inside corners of tab.
11. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
12. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
Dimensions
Symbol
Inch
Millimeters
Note
Min
Max
Min
Max
CD
.178
.195
4.52
4.95
CH
.170
.210
4.32
5.33
HD
.209
.230
5.31
5.84
LC
.100 TP
2.54 TP
6
LD
.016
.021
0.41
0.53
7,8
LL
.500
.750
12.70
19.05
7,8
LU
.016
.019
0.41
0.48
7,8
L1
.050
1.27
7,8
L2
.250
6.35
7,8
P
.100
2.54
Q
.030
0.76
5
TL
.028
.048
0.71
1.22
3,4
TW
.036
.046
0.91
1.17
3
r
.010
0.25
10
α
45° TP
45° TP
6
1, 2, 9, 11, 12
