TO-92 Plastic-Encapsulated Transistors
2N6520 TRANSISTOR (PNP)
FEATURES
Power dissipation
P
CM : 0.625 W (Tamb=25℃)
Collector current
I
CM : -0.5 A
Collector-base voltage
V
(BR)CBO : -350 V
Operating and storage junction temperature range
T
J, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown vol tage V(BR)CBO Ic= -100 µA , IE=0 -350 V
Collector-emitter breakdown voltage V(BR)CEO
* IC= -1 mA , IB=0 -350 V
E mitter-b ase break dow n vol t age V(BR)EBO IE= -10 µA, IC=0 -5 V
Collector cut-off current ICBO V
CB= -250 V , IE=0 -0.05
µA
Emi tter cut -o ff curr e n t IEBO V
EB= -4 V , IC=0 -0.05
µA
DC current gain hFE
VCE=-10 V, IC= -1 mA
VCE=-10 V, IC= -10 mA
VCE=-10 V, IC= -30 mA
VCE=-10 V, IC= -50 mA
VCE=-10 V, IC= -100 mA
20
30
30
20
15
200
200
Collector-emitter saturation vol tage VCE(sat)
IC= -10 mA, IB= -1 mA
IC= -20 mA, IB= -2 mA
IC= -30 mA, IB= -3 mA
IC= -50 mA, IB= -5 mA
-0.3
-0.35
-0.5
-1
V
Base-emitter saturation voltage VBE(sat)
IC= -10 mA, IB= -1 mA
IC= -20 mA, IB= -2 mA
IC= -30 mA, IB= -3 mA
-0.75
-0.85
-0.9
V
Base-emitter voltage VBE(on) V
CE=-10V, IC= -100 mA -2 V
Transition fre quency f T
*
VCE=-20 V, IC= -10 mA
f =20 MHz 40 200 MHz
* Pulse test, Pulse width≤300µs, Duty cycle≤2%.
1 2 3
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
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