VS-20MT120UFAPbF www.vishay.com Vishay Semiconductors "Full Bridge" IGBT MTP (Ultrafast NPT IGBT), 20 A FEATURES * Ultrafast non punch through (NPT) technology * Positive VCE(on) temperature coefficient * 10 s short circuit capability * HEXFRED(R) antiparallel diodes with ultrasoft reverse recovery * Low diode VF * Square RBSOA * Al2O3 DBC substrate * Very low stray inductance design for high speed operation * UL approved file E78996 MTP * Designed and qualified for industrial level * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS BENEFITS VCES 1200 V IC at TC = 96 C 20 A VCE(on) (typical) at IC = 20 A, 25 C 3.29 V Speed 8 kHz to 30 kHz Package MTP Circuit configuration Full bridge * Optimized for welding, UPS and SMPS applications * Rugged with ultrafast performance * Outstanding ZVS and hard switching operation * Low EMI, requires less snubbing * Excellent current sharing in parallel operation * Direct mounting to heatsink * PCB solderable terminals * Very low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter breakdown voltage Continuous collector current SYMBOL TEST CONDITIONS VCES IC TC = 96 C MAX. UNITS 1200 V 20 Pulsed collector current ICM 100 Clamped inductive load current ILM 100 Diode maximum forward current IFM 100 Gate to emitter voltage VGE 20 RMS isolation voltage VISOL Maximum power dissipation (only IGBT) PD Operating junction temperature range TJ Any terminal to case, t = 1 min 2500 TC = 25 C 240 TC = 100 C 96 -40 to +150 A V W C Revision: 09-Oct-17 Document Number: 94470 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20MT120UFAPbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 C unless otherwise noted) PARAMETER SYMBOL Collector to emitter breakdown voltage V(BR)CES Temperature coefficient of breakdown voltage V(BR)CES/TJ Collector to emitter saturation voltage VCE(on) Gate threshold voltage VGE(th) Temperature coefficient of threshold voltage Transconductance VGE(th)/TJ gfe ICES (1) Zero gate voltage collector current Gate to emitter leakage current IGES TEST CONDITIONS MIN. TYP. MAX. 1200 - - V VGE = 0 V, IC = 3 mA (25 to 125 C) - +1.3 - V/C VGE = 0 V, IC = 250 A VGE = 15 V, IC = 20 A - 3.29 3.59 VGE = 15 V, IC = 40 A - 4.42 4.66 VGE = 15 V, IC = 20 A, TJ = 125 C - 3.87 4.11 VGE = 15 V, IC = 40 A, TJ = 125 C - 5.32 5.70 UNITS V VGE = 15 V, IC = 20 A, TJ = 150 C - 3.99 4.27 VCE = VGE, IC = 250 A 4 - 6 VCE = VGE, IC = 3 mA (25 to 125 C) - -14 - VCE = 50 V, IC = 20 A, PW = 80 s - 17.5 - S VGE = 0 V, VCE = 1200 V, TJ = 25 C - - 250 A VGE = 0 V, VCE = 1200 V, TJ = 125 C - 0.7 3.0 VGE = 0 V, VCE = 1200 V, TJ = 150 C - 2.9 9.0 VGE = 20 V - - 250 nA MIN. TYP. MAX. UNITS - 176 264 - 19 30 - 89 134 mV/C mA Note (1) I CES includes also opposite leg overall leakage SWITCHING CHARACTERISTICS (TJ = 25 C unless otherwise specified) PARAMETER SYMBOL Total gate charge (turn-on) Qg Gate to emitter charge (turn-on) Qge Gate to collector charge (turn-on) Qgc Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres TEST CONDITIONS IC = 20 A VCC = 600 V VGE = 15 V VCC = 600 V, IC = 20 A, VGE = 15 V, Rg = 5 , L = 200 H, TJ = 25 C, energy losses include tail and diode reverse recovery - 0.513 0.770 - 0.402 0.603 - 0.915 1.373 VCC = 600 V, IC = 20 A, VGE = 15 V, Rg = 5 , L = 200 H, TJ = 125 C, energy losses include tail and diode reverse recovery - 0.930 1.395 - 0.610 0.915 - 1.540 2.310 VGE = 0 V VCC = 30 V f = 1.0 MHz - 2530 3790 - 344 516 - 78 117 Reverse bias safe operating area RBSOA TJ = 150 C, IC = 120 A VCC = 1000 V, Vp = 1200 V Rg = 5 , VGE = + 15 V to 0 V Short circuit safe operating area SCSOA TJ = 150 C VCC = 900 V, Vp = 1200 V Rg = 5 , VGE = + 15 V to 0 V nC mJ pF Fullsquare 10 - - s UNITS DIODE SPECIFICATIONS (TJ = 25 C unless otherwise specified) PARAMETER Diode forward voltage drop Reverse recovery energy of the diode SYMBOL VFM Erec Diode reverse recovery time trr Peak reverse recovery current Irr TEST CONDITIONS MIN. TYP. MAX. IC = 20 A - 2.48 2.94 IC = 40 A - 3.28 3.90 IC = 20 A, TJ = 125 C - 2.44 2.84 IC = 40 A, TJ = 125 C - 3.45 4.14 IC = 20 A, TJ = 150 C - 2.21 2.93 VGE = 15 V, Rg = 5 , L = 200 H VCC = 600 V, IC = 20 A TJ = 125 C - 420 630 J - 98 150 ns - 33 50 A V Revision: 09-Oct-17 Document Number: 94470 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20MT120UFAPbF www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. TJ -40 - 150 TStg -40 - 125 - 0.53 0.64 - 0.69 0.83 Heatsink compound thermal conductivity = 1 W/mK - 0.06 - Clearance External shortest distance in air between 2 terminals 5.5 - - Creepage Shortest distance along external surface of the insulating material between 2 terminals 8 - - Mounting torque A mounting compound is recommended and the torque should be checked after 3 hours to allow for the spread of the compound. Lubricated threads. Operating junction temperature range Storage temperature range IGBT Junction to case TEST CONDITIONS RthJC Diode Case to sink per module RthCS C/W mm Nm 66 g 1000 140 100 DC 120 10 s IC (A) 10 TC (C) C 3 10 % Weight 160 UNITS 100 100 s 1 1ms 80 DC 0.1 60 0.01 40 0 5 10 15 20 1 25 10 100 1000 10000 VCE (V) IC (A) Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 3 - Forward SOA TC = 25 C; TJ 150 C 250 1000 200 I C (A) Ptot (W) 100 150 100 10 50 1 0 0 20 40 60 80 100 120 140 160 TC (C) Fig. 2 - Power Dissipation vs. Case Temperature 10 100 1000 10000 VCE (V) Fig. 4 - Reverse Bias SOA TJ = 150 C; VGE = 15 V Revision: 09-Oct-17 Document Number: 94470 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20MT120UFAPbF www.vishay.com Vishay Semiconductors 100 120 VGE = 18V VGE VGE VGE VGE = 15V = 12V = 10V = 8.0V -40C 25C 125C 100 80 60 IF (A) ICE (A) 80 60 40 40 20 20 0 0 0 2 4 6 8 0.0 10 1.0 2.0 Fig. 5 - Typical IGBT Output Characteristics TJ = -40 C; tp = 80 s 18 = 15V = 12V = 10V = 8.0V 60 VCE (V) ICE (A) 5.0 20 VGE = 18V VGE VGE VGE VGE 4.0 Fig. 8 - Typical Diode Forward Characteristics tp = 80 s 100 80 3.0 VF (V) VCE (V) 40 16 ICE = 40A ICE = 20A 14 ICE = 10A 12 10 8 6 4 20 2 0 0 0 2 4 6 8 5 10 10 Fig. 6 - Typical IGBT Output Characteristics TJ = 25 C; tp = 80 s 20 Fig. 9 - Typical VCE vs. VGE TJ = -40 C 20 100 VGE VGE VGE VGE VGE 80 = 18V 18 = 15V = 12V = 10V = 8.0V 60 VCE (V) ICE (A) 15 VGE (V) VCE (V) 40 16 ICE = 10A ICE = 20A 14 ICE = 40A 12 10 8 6 20 4 2 0 0 0 2 4 6 8 10 5 10 15 VCE (V) VGE (V) Fig. 7 - Typical IGBT Output Characteristics TJ = 125 C; tp = 80 s Fig. 10 - Typical VCE vs. VGE TJ = 25 C 20 Revision: 09-Oct-17 Document Number: 94470 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20MT120UFAPbF www.vishay.com Vishay Semiconductors 1000 18 ICE = 10A 16 ICE = 20A 14 ICE = 40A Swiching Time (ns) VCE (V) 20 12 10 8 6 tdOFF tF 100 tdON 4 tR 2 0 10 5 10 15 20 0 10 20 30 40 50 IC (A) VGE (V) Fig. 14 - Typical Switching Time vs. IC TJ = 150 C; L = 1.4 mH; VCE = 400 V Rg = 100 ; VGE = 15 V Fig. 11 - Typical VCE vs. VGE TJ = 125 C 300 2000 T J = 25C 250 T J = 150C 1600 EON Energy (J) ICE (A) 200 150 1200 EOFF 800 100 400 50 0 0 0 5 10 15 20 0 10 20 30 40 50 60 RG () VGE (V) Fig. 15 - Typical Energy Loss vs. Rg TJ = 150 C; L = 1.4 mH; VCE = 400 V ICE = 5.0A; VGE = 15 V Fig. 12 - Typical Transfer Characteristics VCE = 50 V; tp = 10 s 2400 1000 2000 Energy (J) Swiching Time (ns) EON 1600 1200 EOFF 800 tdOFF tF 100 tdON tR 400 0 10 0 10 20 30 40 IC (A) Fig. 13 - Typical Energy Loss vs. IC TJ = 150 C; L = 1.4 mH; VCE = 400 V Rg = 5 ; VGE = 15 V 50 0 10 20 30 40 50 60 RG () Fig. 16 - Typical Switching Time vs. Rg TJ = 150 C; L = 1.4 mH; VCE = 400 V ICE = 5.0A; VGE = 15 V Revision: 09-Oct-17 Document Number: 94470 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20MT120UFAPbF www.vishay.com Vishay Semiconductors 3.0 40 RG = 5.0 10 RG = 10 30A 2.0 RG =30 20 5.0 2.5 Q RR (C) IRR (A) 30 RG = 50 20A 30 1.5 50 10A 1.0 10 0.5 0.0 0 0 5 10 15 20 25 30 35 0 200 400 600 800 1000 1200 IF (A) diF /dt (A/s) Fig. 17 - Typical Diode Irr vs. IF TJ = 150 C Fig. 20 - Typical Diode Qrr VCC = 400 V; VGE = 15 V; TJ = 150 C 40 10000 Cies Capacitance (pF) IRR (A) 30 20 1000 Coes 100 Cres 10 10 0 0 10 20 30 40 50 0 60 20 40 60 80 100 RG () VCE (V) Fig. 18 - Typical Diode Irr vs. Rg TJ = 150 C; IF = 5.0 A Fig. 21 - Typical Capacitance vs. VCE VGE = 0 V; f = 1 MHz 40 16 14 35 600V 12 10 VGE (V) IRR (A) 30 25 8 6 20 4 15 2 0 10 0 200 400 600 800 1000 diF /dt (A/s) Fig. 19 - Typical Diode Irr vs. dIF/dt VCC = 400 V; VGE = 15 V; ICE = 5.0 A; TJ = 150 C 0 40 80 120 160 200 Q G , Total Gate Charge (nC) Fig. 22 - Typical Gate Charge vs. VGE ICE = 5.0 A; L = 600 H Revision: 09-Oct-17 Document Number: 94470 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20MT120UFAPbF www.vishay.com Vishay Semiconductors 1 D = 0.5 D = 0.2 Thermal Response (ZthJC) 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D =0.01 Single Pulse (Thermal Response) 0.001 0.0001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1, Rectangular Pulse Duration (sec) Fig. 23 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 1 D = 0.5 Thermal Response (ZthJC) D = 0.2 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D =0.01 Single Pulse (Thermal Response) 0.001 0.0001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1, Rectangular Pulse Duration (sec) Fig. 24 - Maximum Transient Thermal Impedance, Junction-to-Case (Diode) L L D.U.T. 0 1K Fig. 25 - Gate Charge Circuit (Turn-Off) + - VCC 80 V + - D.U.T Rg 1000 V Fig. 26 - RBSOA Circuit Revision: 09-Oct-17 Document Number: 94470 7 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20MT120UFAPbF www.vishay.com Vishay Semiconductors Diode clamp/ D.U.T. L Driver - + -5V D + C - 900 V D.U.T./ driver D.U.T. + VCC Rg Fig. 27 - S.C. SOA Circuit Fig. 28 - Switching Loss Circuit 9, 10 4 5 3 6 15, 16 13, 14 2 7 1 8 11, 12 Fig. 29 - Electrical diagram ORDERING INFORMATION TABLE Device code VS- 20 MT 120 U F A PbF 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (20 = 20 A) 3 - Essential part number 4 - Voltage code (120 = 1200 V) 5 - Speed / type (U = ultrafast IGBT) 6 - Circuit configuration (F = full bridge) 7 - A = Al2O3 DBC substrate 8 - Lead (Pb)-free Revision: 09-Oct-17 Document Number: 94470 8 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20MT120UFAPbF www.vishay.com Vishay Semiconductors CIRCUIT CONFIGURATION LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95245 Revision: 09-Oct-17 Document Number: 94470 9 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors MTP MOSFET/IGBT Full-Bridge DIMENSIONS in millimeters O5 O 1.1 4 20.5 12 0.5 2.5 31.8 33 3 2 13 4 14 9 10 1 11 15 5 12 8 16 7 6 0.3 0.1 7 6.6 0.1 8 0.1 45 11.4 0.1 11.3 0.1 27.5 3 0.1 5.3 0.1 3 0.1 7.4 0.1 5.3 0.1 O 5.2 x 3 8 0.1 7 0.1 R5.75 (x 2) 7.4 0.1 4.9 0.1 6.6 0.1 39.5 44.5 48.7 0.6 x h1.2 1.3 63.5 0.25 Document Number: 95245 Revision: 24-Sep-08 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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