VS-20MT120UFAPbF
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“Full Bridge” IGBT MTP (Ultrafast NPT IGBT), 20 A
FEATURES
• Ultrafast non punch through (NPT) technology
•Positive V
CE(on) temperature coefficient
• 10 μs short circuit capability
•HEXFRED
® antiparallel diodes with ultrasoft
reverse recovery
• Low diode VF
• Square RBSOA
•Al
2O3 DBC substrate
• Very low stray inductance design for high speed operation
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Optimized for welding, UPS and SMPS applications
• Rugged with ultrafast performance
• Outstanding ZVS and hard switching operation
• Low EMI, requires less snubbing
• Excellent current sharing in parallel operation
• Direct mounting to heatsink
• PCB solderable terminals
• Very low junction to case thermal resistance
PRIMARY CHARACTERISTICS
VCES 1200 V
IC at TC = 96 °C 20 A
VCE(on) (typical)
at IC = 20 A, 25 °C 3.29 V
Speed 8 kHz to 30 kHz
Package MTP
Circuit configuration Full bridge
MTP
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter breakdown voltage VCES 1200 V
Continuous collector current ICTC = 96 °C 20
A
Pulsed collector current ICM 100
Clamped inductive load current ILM 100
Diode maximum forward current IFM 100
Gate to emitter voltage VGE ± 20 V
RMS isolation voltage VISOL Any terminal to case, t = 1 min 2500
Maximum power dissipation (only IGBT) PD
TC = 25 °C 240 W
TC = 100 °C 96
Operating junction temperature range TJ-40 to +150 °C
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Note
(1) ICES includes also opposite leg overall leakage
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V(BR)CES VGE = 0 V, IC = 250 μA 1200 - - V
Temperature coefficient of breakdown voltage V(BR)CES/TJVGE = 0 V, IC = 3 mA (25 to 125 °C) - +1.3 - V/°C
Collector to emitter saturation voltage VCE(on)
VGE = 15 V, IC = 20 A - 3.29 3.59
V
VGE = 15 V, IC = 40 A - 4.42 4.66
VGE = 15 V, IC = 20 A, TJ = 125 °C - 3.87 4.11
VGE = 15 V, IC = 40 A, TJ = 125 °C - 5.32 5.70
VGE = 15 V, IC = 20 A, TJ = 150 °C - 3.99 4.27
Gate threshold voltage VGE(th) VCE = VGE, IC = 250 μA 4 - 6
Temperature coefficient of threshold voltage VGE(th)/TJVCE = VGE, IC = 3 mA (25 to 125 °C) - -14 - mV/°C
Transconductance gfe VCE = 50 V, IC = 20 A, PW = 80 μs - 17.5 - S
Zero gate voltage collector current ICES (1)
VGE = 0 V, VCE = 1200 V, TJ = 25 °C - - 250 μA
VGE = 0 V, VCE = 1200 V, TJ = 125 °C - 0.7 3.0 mA
VGE = 0 V, VCE = 1200 V, TJ = 150 °C - 2.9 9.0
Gate to emitter leakage current IGES VGE = ± 20 V - - ± 250 nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) QgIC = 20 A
VCC = 600 V
VGE = 15 V
- 176 264
nCGate to emitter charge (turn-on) Qge -1930
Gate to collector charge (turn-on) Qgc - 89 134
Turn-on switching loss Eon VCC = 600 V, IC = 20 A, VGE = 15 V,
Rg = 5 , L = 200 μH, TJ = 25 °C,
energy losses include tail and
diode reverse recovery
- 0.513 0.770
mJ
Turn-off switching loss Eoff - 0.402 0.603
Total switching loss Etot - 0.915 1.373
Turn-on switching loss Eon VCC = 600 V, IC = 20 A, VGE = 15 V,
Rg = 5 , L = 200 μH, TJ = 125 °C,
energy losses include tail and
diode reverse recovery
- 0.930 1.395
Turn-off switching loss Eoff - 0.610 0.915
Total switching loss Etot - 1.540 2.310
Input capacitance Cies VGE = 0 V
VCC = 30 V
f = 1.0 MHz
- 2530 3790
pFOutput capacitance Coes - 344 516
Reverse transfer capacitance Cres - 78 117
Reverse bias safe operating area RBSOA
TJ = 150 °C, IC = 120 A
VCC = 1000 V, Vp = 1200 V
Rg = 5 , VGE = + 15 V to 0 V
Fullsquare
Short circuit safe operating area SCSOA
TJ = 150 °C
VCC = 900 V, Vp = 1200 V
Rg = 5 , VGE = + 15 V to 0 V
10 - - μs
DIODE SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Diode forward voltage drop VFM
IC = 20 A - 2.48 2.94
V
IC = 40 A - 3.28 3.90
IC = 20 A, TJ = 125 °C - 2.44 2.84
IC = 40 A, TJ = 125 °C - 3.45 4.14
IC = 20 A, TJ = 150 °C - 2.21 2.93
Reverse recovery energy of the diode Erec VGE = 15 V, Rg = 5 , L = 200 μH
VCC = 600 V, IC = 20 A
TJ = 125 °C
- 420 630 μJ
Diode reverse recovery time trr - 98 150 ns
Peak reverse recovery current Irr -3350A
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Fig. 1 - Maximum DC Collector Current vs. Case Temperature
Fig. 2 - Power Dissipation vs. Case Temperature
Fig. 3 - Forward SOA
TC = 25 °C; TJ 150 °C
Fig. 4 - Reverse Bias SOA
TJ = 150 °C; VGE = 15 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Operating junction temperature range TJ-40 - 150 °C
Storage temperature range TStg -40 - 125
Junction to case IGBT RthJC
- 0.53 0.64
°C/WDiode - 0.69 0.83
Case to sink per module RthCS Heatsink compound thermal conductivity = 1 W/mK - 0.06 -
Clearance External shortest distance in air between 2 terminals 5.5 - -
mm
Creepage Shortest distance along external surface of the
insulating material between 2 terminals 8--
Mounting torque
A mounting compound is recommended and the
torque should be checked after 3 hours to allow for
the spread of the compound. Lubricated threads.
3 ± 10 % Nm
Weight 66 g
IC (A)
TC (°C)
40
60
80
100
120
140
160
0 5 10 15 20 25
DC
0 20406080100120140160
TC(°C)
0
50
100
150
200
250
Ptot(W)
1 10 100 1000 10000
VCE (V)
0.01
0.1
1
10
100
1000
IC(A)
10 µs
100 µs
1ms
DC
10 100 1000 10000
VCE (V)
1
10
100
1000
IC(A)
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Fig. 5 - Typical IGBT Output Characteristics
TJ = -40 °C; tp = 80 μs
Fig. 6 - Typical IGBT Output Characteristics
TJ = 25 °C; tp = 80 μs
Fig. 7 - Typical IGBT Output Characteristics
TJ = 125 °C; tp = 80 μs
Fig. 8 - Typical Diode Forward Characteristics
tp = 80 μs
Fig. 9 - Typical VCE vs. VGE
TJ = -40 °C
Fig. 10 - Typical VCE vs. VGE
TJ = 25 °C
0246810
VCE (V)
0
20
40
60
80
100
ICE(A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0246810
VCE (V)
0
20
40
60
80
100
ICE(A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0246810
VCE (V )
0
20
40
60
80
100
ICE(A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0.0 1.0 2.0 3.0 4.0 5.0
VF(V)
0
20
40
60
80
100
120
IF(A)
-40°C
25°C
125°C
5101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE(V)
ICE = 40A
ICE = 20A
ICE = 10A
5101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE(V)
ICE = 10A
ICE = 20A
ICE = 40A
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Fig. 11 - Typical VCE vs. VGE
TJ = 125 °C
Fig. 12 - Typical Transfer Characteristics
VCE = 50 V; tp = 10 μs
Fig. 13 - Typical Energy Loss vs. IC
TJ = 150 °C; L = 1.4 mH; VCE = 400 V
Rg = 5 ; VGE = 15 V
Fig. 14 - Typical Switching Time vs. IC
TJ = 150 °C; L = 1.4 mH; VCE = 400 V
Rg = 100 ; VGE = 15 V
Fig. 15 - Typical Energy Loss vs. Rg
TJ = 150 °C; L = 1.4 mH; VCE = 400 V
ICE = 5.0A; VGE = 15 V
Fig. 16 - Typical Switching Time vs. Rg
TJ = 150 °C; L = 1.4 mH; VCE = 400 V
ICE = 5.0A; VGE = 15 V
5101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE(V)
ICE = 10A
ICE = 20A
ICE = 40A
0 5 10 15 20
VGE (V)
0
50
100
150
200
250
300
ICE(A)
TJ = 25°C
TJ= 150°C
0 1020304050
IC(A)
0
400
800
1200
1600
2000
2400
Energy(µJ)
EOFF
EON
010 20 30 40 50
IC(A)
10
100
1000
SwichingTime(ns)
tR
tdOFF
tF
tdON
010 20 30 40 50 60
RG (Ω)
0
400
800
1200
1600
2000
Energy(µJ)
EON
EOFF
010 20 30 40 50 60
RG (Ω)
10
100
1000
SwichingTime(ns)
tR
tdOFF
tF
tdON
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Fig. 17 - Typical Diode Irr vs. IF
TJ = 150 °C
Fig. 18 - Typical Diode Irr vs. Rg
TJ = 150 °C; IF = 5.0 A
Fig. 19 - Typical Diode Irr vs. dIF/dt
VCC = 400 V; VGE = 15 V; ICE = 5.0 A; TJ = 150 °C
Fig. 20 - Typical Diode Qrr
VCC = 400 V; VGE = 15 V; TJ = 150 °C
Fig. 21 - Typical Capacitance vs. VCE
VGE = 0 V; f = 1 MHz
Fig. 22 - Typical Gate Charge vs. VGE
ICE = 5.0 A; L = 600 μH
0 5 10 15 20 25 30 35
IF(A)
0
10
20
30
40
IRR(A)
RG = 5.0Ω
RG =10 Ω
RG =30 Ω
RG =50 Ω
010 20 30 40 50 60
RG(Ω)
0
10
20
30
40
IRR(A)
0200 400 600 800 1000
diF/dt (A/µs)
10
15
20
25
30
35
40
IRR(A)
0 200 400 600 800 1000 1200
diF /dt (A/µs)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
QRR(µC)
5.0Ω
30Ω
10 Ω
50Ω
30A
20A
10A
020 40 60 80 100
VCE (V)
10
100
1000
10000
Capacitance(pF)
Cies
Coes
Cres
0 40 80 120 160 200
QG, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VGE(V)
600V
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Fig. 23 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
Fig. 24 - Maximum Transient Thermal Impedance, Junction-to-Case (Diode)
Fig. 25 - Gate Charge Circuit (Turn-Off) Fig. 26 - RBSOA Circuit
t1, Rectangular Pulse Duration (sec)
Thermal Response (ZthJC)
0.0001
0.001
0.01
0.1
1
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10
Single Pulse
(Thermal Response)
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D =0.01
t1, Rectangular Pulse Duration (sec)
Thermal Response (ZthJC)
0.0001
0.001
0.01
0.1
1
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10
Single Pulse
(Thermal Response)
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D =0.01
1 K
VCC
D.U.T.
0
L
+
-
L
Rg
80 V D.U.T
1000 V
+
-
VS-20MT120UFAPbF
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Fig. 27 - S.C. SOA Circuit Fig. 28 - Switching Loss Circuit
Fig. 29 - Electrical diagram
ORDERING INFORMATION TABLE
D
C
Driver
D.U.T.
900 V
+
-
L
Rg
VCC
Diode clamp/
D.U.T.
D.U.T./
driver
- 5 V
-+
+
-
9, 10
4
3
5
6
15, 16
7
8
11, 12
13, 14
2
1
Device code
51 32 4
1
2
3
4
5
6
- A = Al2O3 DBC substrate
7
8- Lead (Pb)-free
6 7 8
- Current rating (20 = 20 A)
- Essential part number
- Voltage code (120 = 1200 V)
- Speed / type (U = ultrafast IGBT)
- Circuit configuration (F = full bridge)
20VS- MT 120 U F A PbF
- Vishay Semiconductors product
VS-20MT120UFAPbF
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CIRCUIT CONFIGURATION
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95245
Document Number: 95245 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 24-Sep-08 1
MTP MOSFET/IGBT Full-Bridge
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters
Ø 5 Ø 1.1
12 ± 0.5
4
20.5
2.5 31.8
33
41
32
13
14 11
12
9
10
5
6
15
16
7
8
R5.75 (x 2)
27.5
11.4 ± 0.1 11.3 ± 0.1
Ø 5.2 x 3
3 ± 0.1
8 ± 0.1
0.3 ± 0.1
76.6 ± 0.1
7.4 ± 0.1
3 ± 0.1
5.3 ± 0.1
5.3 ± 0.1
45°
0.6 x h1.2
63.5 ± 0.25
48.7
44.5
39.5
6.6 ± 0.1
7.4 ± 0.1
4.9 ± 0.1
8 ± 0.1
1.3
7 ± 0.1
Legal Disclaimer Notice
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Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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