2N6388
Darlington Power Transistor
Page 1 05/10/05 V1.1
Darlington silicon power transistors are designed for general-purpose amplifier
and low speed switching applications.
Features:
••Collector-Emitter Sustaining Voltage
VCEO(sus) = 80V (Minimum).
••Collector-Emitter Saturation Voltage
VCE(sat) = 2.0V (Maximum) at IC= 5.0A.
••DC Current Gain hFE = 2500 (Typical) at IC= 4.0A.
Dimensions : Millimetres
Pin 1. Base
2. Collector
3. Emitter
4. Collector(Case)
Dimensions Minimum Maximum
A 14.68 15.31
B 9.78 10.42
C 5.01 6.52
D 13.06 14.62
E 3.57 4.07
F 2.42 3.66
G 1.12 1.36
H 0.72 0.96
I 4.22 4.98
J 1.14 1.38
K 2.20 2.97
L 0.33 0.55
M 2.48 2.98
O 3.70 3.90
NPN
2N6388
TO-220
10 Ampere
Darlington
Power Transistors
NPN Silicon
80 Volts
65 Watts
2N6388
Darlington Power Transistor
Page 2 05/10/05 V1.1
Characteristic Symbol Rating Unit
Collector-Emitter Voltage VCEO
80
VCollector-Base Voltage VCBO
Emitter-Base Voltage VEBO 5.0
Collector Current-Continuous
-Peak
IC
ICM
10
15 A
Base Current IB0.25
Total Power Dissipation at TC= 25°C
Derate above 25°C PD65
0.52
W
W/°C
Operating and Storage Junction Temperature Range TJ, TSTG -65 to +150 °C
Maximum Ratings
Thermal Characteristics
Characteristic Symbol Maximum Unit
Thermal Resistance Junction to Case Rθjc 1.92 °C/W
TC, Temperature (°C)
Figure - 1 Power Derating
PD, Power Dissipation (Watts)
2N6388
Darlington Power Transistor
Page 3 05/10/05 V1.1
Electrical Characteristics (TC= 25°C Unless Otherwise Noted)
Characteristic Symbol Minimum Maximum Unit
OFF Characteristics
Collector-Emitter Sustaining Voltage (1)
(IC= 200mA, IB= 0) VCEO(sus) 80 - V
Collector Cut off Current
(VCE = 80V, IB = 0) ICEO - 1.0
mA
Collector Cut off Current
(VCE = 80V, VBE(off) = 1.5V)
(VCE = 80V, VBE(off) = 1.5V, TC= 125°C)
ICEX - 0.3
3.0
Emitter Cut off Current
(VEB = 5.0V, IC= 0) IEBO 5.0 -
ON Characteristics (1)
DC Current Gain
(IC= 5.0A, VCE = 3.0V)
(IC= 10A, VCE = 3.0V)
hFE 1000
100
20,000 -
Collector-Emitter Saturation Voltage
(IC= 5.0A, IB= 10mA)
(IC= 10A, IB= 100mA)
VCE(sat) - 2.0
3.0
V
Base-Emitter On Voltage
(IC= 5.0A, VCE = 3.0V)
(IC= 10A, VCE = 3.0V)
VBE(on) - 2.8
4.5
Dynamic Characteristics
Small-Signal Current Gain
(IC= 1.0A, VCE = 5.0V, f = 1.0KHz) hfe 1000 - -
Output Capacitance
(VCB = 10V, IE= 0, f = 1.0MHz) Cob - 200 pF
(1) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤2.0%.
2N6388
Darlington Power Transistor
Page 4 05/10/05 V1.1
hFE, DC Current Gain
IC, Collector Current (AMP)
DC Current Gain Collector Saturation Region
IB, Base Current (mA)
VCE, Collector Emitter Voltage (Volts)
IC, Collector Current (AMP) IC, Collector Current (AMP)
“ON” Voltages Switching Time
V, Voltage (Volts)
t, Time (µs)
2N6388
Darlington Power Transistor
Page 5 05/10/05 V1.1
Specifications
IC(av)
maximum
(A)
VCEO
maximum
(V)
hFE
minimum
at IC= 5A
Ptot
at 25°C
(W)
Package Type Part Number
10 80 1000 65 TO-220 NPN 2N6388
Active-Region Safe Operating Area (SOA)
IC, Collector Current (AMP)
VCE, Collector Emitter Voltage (Volts)
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown
safe operating area curves indicate IC-VCE limits of the transistor
that must be observed for reliable operation i.e., the transistor that
must not be subjected to greater dissipation than the curves
indicate.
The data of SOA curve is based on TJ(PK) = 150°C; TCis variable
depending on conditions. Second breakdown pulse limits are valid
for duty cycles to 10% provided TJ(PK)≤150°C, At high case
temperatures, thermal limitation will reduce the power that can be
handled to values less than the limitations imposed by second
breakdown.
For enquiries from all other markets
2N6388
Darlington Power Transistor
Page 6 05/10/05 V1.1
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