MITSUBISHI RF MOSFET MODULE
RA30H1317M1
RoHS Compliance , 135-175MHz
30W
12.5V 2 Stage Amp. For MOBILE RADIO
RA30H1317M1 MITSUBISHI ELECTRIC 2 Aug 2007
1/8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
DESCRIPTION
The RA30H1317M1 is a 30-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 135- to
175-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. The output power and
drain current increase as the gate voltage increases. With a gate
voltage around 3.5V (minimum), output power and drain current
increases substantially. The nominal output power becomes
available at 4V (typical) and 5V (maximum). At VGG=5V, the
typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power
with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD≅0 @ VDD=12.5V, VGG=0V)
• Pout>30W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 135-175MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
RoHS COMPLIANCE
• RA30H1317M1-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER SUPPLY FORM
RA30H1317M1-101 Antistatic tray,
10 modules/tray
BLOCK
DIAGRAM
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (Pout)
5 RF Ground (Case)
3
2
4
1
5
PACKAGE CODE: H2S
TENTATIVE
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE RA30H1317M1
RA30H1317M1 MITSUBISHI ELECTRIC 2 Aug 2007
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ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MAXIMUM RATINGS
(Tcase=+25°C, unless otherwise specified)
SYMBOL PARAMETER CONDITIONS RATING UNIT
VDD Drain Voltage VGG<5V, ZG=ZL=50Ω 17 V
VGG Gate Voltage VDD<12.5V, Pin=50mW, ZG=ZL=50Ω 6 V
Pin Input Power 100 mW
Pout Output Power 45 W
Tcase(OP) Operation Case Temperature Range f=135-175MHz, VGG<5V -30 to +100 °C
Tstg Storage Temperature Range -40 to +110 °C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
f Frequency Range 135 175 MHz
Pout Output Power 30 W
ηT Total Efficiency 40 %
2fo 2
nd Harmonic -35 dBc
3fo 3
rd Harmonic -45 dBc
ρin Input VSWR
VDD=12.5V,VGG=5V,Pin=50mW
3:1 —
IGG Leakage Current VDD=12.5V,VGG=0V,Pin=0W 1 mA
— Stability VDD=10.0-15.2V, Pin=25-70mW,
Pout<30W (VGG control), Load VSWR=3:1 No parasitic oscillation —
— Load VSWR T olerance VDD=15.2V, Pin=50mW, Pout=30W (VGG control),
Load VSWR=20:1 No degradation or destroy —
All parameters, conditions, ratings, and limits are subject to change without notice.
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE RA30H1317M1
RA30H1317M1 MITSUBISHI ELECTRIC 2 Aug 2007
3/8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TYPICAL PERFORMANCE
(Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
OUTP U T POWE R , TOTAL EFF ICI E N C Y , 2
nd
, 3
rd
HARMONICS versus FREQUENCY
and INPUT VSWR versus FREQUENCY
OUTPUT POWER, POWER GAIN and OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER DRAIN CURRENT versus INPUT POWER
OUTPUT POWER , PO W ER GAIN and
DRAIN CURRENT versus INPUT POWER
0
5
10
15
20
25
30
35
40
45
50
130 140 150 160 170 180
FREQUENCY f(M Hz)
OUTPUT POWER P
out
(W)
INPUT VSWR ρ
in
(-)
0
10
20
30
40
50
60
70
80
90
100
TOTAL EFFICIENC Y η
T
(%)
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
P
out
η
T
ρ
in
0
10
20
30
40
50
-10 -5 0 5 10 15 20
INPUT POWER P
in
(dBm)
OUTPUT POWER P
out
(dBm)
POWER GAIN Gp(dB)
0
2
4
6
8
10
DRAIN CU R RE N T I
DD
(A)
f=135MHz
V
DD
=12.5V
V
GG
=5V
P
out
I
DD
Gp
0
10
20
30
40
50
-10 -5 0 5 10 15 20
INPUT POWER P
in
(dBm)
OUTPUT POWER P
out
(dBm)
POWER GAIN Gp(dB)
0
2
4
6
8
10
DRAIN CURRENT I
DD
(A)
f=155MHz
V
DD
=12.5V
V
GG
=5V
P
out
Gp
I
DD
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
130 140 150 160 170 180
FREQUENCY f(MHz)
HARMONICS (dBc)
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
2
nd
3
rd
0
10
20
30
40
50
-10 -5 0 5 10 15 20
INPUT POWER P
in
(dBm)
OUTPUT POWER P
out
(dBm)
POWER GAIN G p (dB)
0
2
4
6
8
10
DRAIN CURRENT I
DD
(A)
f=175MHz
V
DD
=12.5V
V
GG
=5V
P
out
Gp
I
DD
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE RA30H1317M1
RA30H1317M1 MITSUBISHI ELECTRIC 2 Aug 2007
4/8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TYPICAL PERFORMANCE
(Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
OUTPUT POWER and DRAIN CURRENT OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE versus DRAIN VOLTAGE
OUTPUT POWER and DRAIN CURRENT
versus DR AIN VOLTAGE
0
10
20
30
40
50
60
70
80
0 2 4 6 8 1012141618
DRAIN VOLTAGE V
DD
(V)
OUTPUT P OWER P
out
(W)
0
2
4
6
8
10
12
14
16
DRAIN CURRENT I
DD
(A)
P
out
f=135MHz
Pin=50mW
V
GG
=5V
I
DD
0
10
20
30
40
50
60
70
80
0 2 4 6 8 10 12 14 16 18
DRAIN VOLTAGE V
DD
(V)
OUTPUT POWER P
out
(W)
0
2
4
6
8
10
12
14
16
DRAIN CURRENT I
DD
(A)
P
out
f=155MHz
Pin=50mW
V
GG
=5V
I
DD
0
10
20
30
40
50
60
70
80
0 2 4 6 8 1012141618
DRAIN VOLTAGE V
DD
(V)
OUTPUT POWER P
out
(W)
0
2
4
6
8
10
12
14
16
DRAIN CURRENT I
DD
(A)
P
out
f=175MHz
Pin=50mW
V
GG
=5V
I
DD
OUTPUT POWER and DRAIN CURRENT OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE versus GATE VOLTAGE
OUTPUT PO WER and DRAIN CURRENT
versus GATE VOLTAGE
0
10
20
30
40
50
60
2.5 3.0 3.5 4.0 4.5 5.0 5.5
GATE VOLTAGE V
GG
(V)
OUTPUT POWER P
out
(W)
0
2
4
6
8
10
12
DRAIN CURRENT I
DD
(A)
P
out
f=135MHz
Pin=50mW
V
DD
=12.5V
I
DD
0
10
20
30
40
50
60
2.53.03.54.04.55.05.5
GATE VOLTAGE V
GG
(V)
OUTPUT POWER P
out
(W)
0
2
4
6
8
10
12
DRAIN CURRENT I
DD
(A)
P
out
f=155MHz
Pin=50mW
V
DD
=12.5V
I
DD
0
10
20
30
40
50
60
2.5 3.0 3.5 4.0 4.5 5.0 5.5
GATE VOLTAGE V
GG
(V)
OUTPUT POWER P
out
(W)
0
2
4
6
8
10
12
DRAIN CURRENT I
DD
(A)
P
out
f=175MHz
Pin=50mW
V
DD
=12.5V
I
DD
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE RA30H1317M1
RA30H1317M1 MITSUBISHI ELECTRIC 2 Aug 2007
5/8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
OUTLINE
DRAWING
(
mm
)
1 RF Input (Pin)
2 Gate Voltage (VGG)
3 Drain Voltage (VDD)
4 RF Output (Pout)
5 RF Ground (Case)
3.1+0.6/-0.4
7.3±0.5
（9.9）
（2.6）
44±1
56±1
49.8±1
67±1
60±1
2-R2±0.5
19.4±1
15±1
17±1
12.5±1
10.7±1
②①
18±1
4±0.5
0.6±0.2
③④
(3.26)
⑤
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE RA30H1317M1
RA30H1317M1 MITSUBISHI ELECTRIC 2 Aug 2007
6/8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
1 RF Input (Pin)
2 Gate Voltage (VGG)
3 Drain Voltage (VDD)
4 RF Output (Pout)
5 RF Ground (Case)
C1, C2: 4700pF, 22uF in parallel
Directional
Coupler Attenuator Power
Meter
Spectrum
Analyzer
Signal
Generator Attenuator
Pre-
amplifier
Power
Meter
Directional
Coupler
DUT 5
4
3
2
1
Z
G
=50
Ω
Z
L
=50Ω
C1 C2
- +
DC Power
Supply VGG
+ -
DC Power
Supply VDD
TEST BLOCK DIAGRAM
Attenuator
EQUIVALENT CIRCUIT
1
23
4
5
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE RA30H1317M1
RA30H1317M1 MITSUBISHI ELECTRIC 2 Aug 2007
7/8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
PRECAUTIONS, RECOMMENDATIONS, and APPLICATION INFORMATION:
Construction:
This module consists of an alumina substrate soldered onto a copper flange. For mechanical protection, a plastic
cap is attached with silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the
substrate, and coated with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors form
the bias and matching circuits. Wire leads soldered onto the alumina substrate provide the DC and RF connection.
Following conditions must be avoided:
a) Bending forces on the alumina substrate (for example, by driving screws or from fast thermal changes)
b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion)
c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichloroethylene)
d) Frequent on/off switching that causes thermal expansion of the resin
e) ESD, surge, overvoltage in combination with load VSWR, and oscillation
ESD:
This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required.
Mounting:
Heat sink flatness must be less than 50 µm (a heat sink that is not flat or particles between module and heat sink
may cause the ceramic substrate in the module to crack by bending forces, either immediately when driving screws
or later when thermal expansion forces are added).
A thermal compound between module and heat sink is recommended for low thermal contact resistance and to
reduce the bending stress on the ceramic substrate caused by the temperature difference to the heat sink.
The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board.
M3 screws are recommended with a tightening torque of 0.4 to 0.6 Nm.
Soldering and Defluxing:
This module is designed for manual soldering.
The leads must be soldered after the module is screwed onto the heat sink.
The temperature of the lead (terminal) soldering should be lower than 350°C and shorter than 3 second.
Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause
bubbles in the coating of the transistor chips which can lift off the bond wires).
Thermal Design of the Heat Sink:
At Pout=30W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are:
Stage Pin
(W) Pout
(W) Rth(ch-case)
(°C/W) IDD @ ηT=40%
(A) VDD
(V)
1st 0.05 5.0 2.9 0.84
2nd 5.0 30.0 0.7 5.16 12.5
The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are:
Tch1 = Tcase + (12.5V x 0.84A – 5.0W + 0.05W) x 2.9°C/W = Tcase + 16.1 °C
Tch2 = Tcase + (12.5V x 5.16A - 30.0W + 5.0W) x 0.7°C/W = Tcase + 27.7 °C
For long-term reliability, it is best to keep the module case temperature (Tcase) below 90°C. For an ambient
temperature Tair=60°C and Pout=30W, the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / ηT ) -
Pout + Pin ) of the heat sink, including the contact resistance, is:
Rth(case-air) = (90°C - 60°C) / (30W/40% – 30W + 0.05W) = 0.67 °C/W
When mounting the module with the thermal resistance of 0.67 °C/W, the channel temperature of each stage
transistor is:
Tch1 = Tair + 46.1 °C
Tch2 = Tair + 57.7 °C
The 175°C maximum rating for the channel temperature ensures application under derated conditions.
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE RA30H1317M1
RA30H1317M1 MITSUBISHI ELECTRIC 2 Aug 2007
8/8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Output Power Control:
Depending on linearity, the following two methods are recommended to control the output power:
a) Non-linear FM modulation:
By the gate voltage (VGG).
When the gate voltage is close to zero, the RF input signal is attenuated up to 60 dB and only a small leakage
current flows from the battery into the drain.
Around VGG=4V, the output power and drain current increases substantially.
Around VGG=4.5V (typical) to VGG=5V (maximum), the nominal output power becomes available.
b) Linear AM modulation:
By RF input power Pin.
The gate voltage is used to set the drain’s quiescent current for the required linearity.
Oscillation:
To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and
drain, a 4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor.
When an amplifier circuit around this module shows oscillation, the following may be checked:
a) Do the bias decoupling capacitors have a low inductance pass to the case of the module?
b) Is the load impedance ZL=50Ω?
c) Is the source impedance ZG=50Ω?
Frequent on/off switching:
In base stations, frequent on/off switching can cause thermal expansion of the resin that coats the transistor chips
and can result in reduced or no output power. The bond wires in the resin will break after long-term thermally
induced mechanical stress.
Quality:
Mitsubishi Electric is not liable for failures resulting from base station operation time or operating conditions
exceeding those of mobile radios.
This module technology results from more than 20 years of experience, field proven in tens of millions of mobile
radios. Currently, most returned modules show failures such as ESD, substrate crack, and transistor burnout,
which are caused by improper handling or exceeding recommended operating conditions. Few degradation failures
are found.
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there
is always the possibility that trouble may occur. Trouble with semiconductors may lead to personal injury, fire or propert
y
damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as
(i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material, or (iii) prevention against any malfunction o
r
mishap.
Keep safety first in your circuit designs!
