P-CHANNEL ENHANCEMENT MODE VERTICAL IGBT ZCP0545A ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). MAX. This IGBT combines the high input impedance of the DMOSFET with the high current density of the BJT. PARAMETER SYMBOL MIN. UNIT CONDITIONS. FEATURES Forward Drain-Source Breakdown Voltage BVDSS -450 V Reverse Drain-Source Breakdown Voltage (4) BVSD -20 V * * EXTREMELY LOW ON STATE VOLTAGE NO NEED TO DERATE FOR HIGHER TEMPERATURES * EASE OF PARALLELING Gate-Source Threshold Voltage VGS(th) -1 ID=-1mA, VDS= VGS * * EXCELLENT TEMPERATURE IMMUNITY HIGH INPUT IMPEDANCE Gate-Body Leakage Zero Gate Voltage Drain Current Drain Source Saturation Voltage (1) TYP. ZCP0545A VGS=0V -3.5 V IGSS 20 nA VGS= 20V, VDS=0V * IDSS -20 -2 A mA VDS=max. rating, VGS=0 VDS=0.8 x max. rating, VGS=0V, Tamb=125C (2) REVERSE BLOCKING CHARACTERISTIC WHICH IS INDEPENDENT OF GATE BIAS * LOW INPUT CAPACITANCE VDS(SAT) -3 -3 V V ID=-500mA, VDS=-10 V ID=-200mA, VDS=-5 V Static Drain-Source RDS(on) On-State Resistance (1) 6 VGS=-10V,ID=-500mA Input Capacitance (2) 120 pF Common Source Coss Output Capacitance (2) 20 pF Reverse Transfer Capacitance (2) Crss 5 pF Switching Times (2)(3) ton 150 ns 350 ns Ciss toff 250 VDS=-25 V, VGS=0V, f=1MHz VDD -25V, VGEN=-10V ID=250mA, RGS=50 (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator (4) One minute maximum duration. Exceeds common international automotive reverse battery test specifications D G S E-Line TO92 Compatible * CHARACTERISED FOR LOGIC LEVEL DRIVE APPLICATIONS * FLUORESCENT LAMP DRIVER * * AUTOMOTIVE LOAD DRIVERS HIGH VOLTAGE DC-DC CONVERTERS * DARLINGTON REPLACEMENT * TELECOMS HOOK SWITCH AND EARTH RECALL SWITCH ABSOLUTE MAXIMUM RATINGS (at Tamb=25C unless otherwise stated) PARAMETER SYMBOL Forward Drain-Source Voltage VDS Reverse Drain Source Voltage VSD -20 V Continuous Drain Current ID -0.32 A Practical Continuous Drain Current* IDP -0.37 A Pulsed Drain Current IDMR IDM -0.8 -0.4 A A @ Tamb=25C @ Tamb=125C VALUE UNIT -450 V Gate-Source Voltage VGS 20 V Power Dissipation Ptot 0.6 W Practical Power Dissipation* PDP Operating and Storage Temperature Range Tj:Tstg 0.8 W -55 to +125 C * With the device mounted in a typical manner on a P.C.B. with at least 1 sq. inch of copper. PAGE NO P-CHANNEL ENHANCEMENT MODE VERTICAL IGBT ZCP0545A ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). MAX. This IGBT combines the high input impedance of the DMOSFET with the high current density of the BJT. PARAMETER SYMBOL MIN. UNIT CONDITIONS. FEATURES Forward Drain-Source Breakdown Voltage BVDSS -450 V Reverse Drain-Source Breakdown Voltage (4) BVSD -20 V * * EXTREMELY LOW ON STATE VOLTAGE NO NEED TO DERATE FOR HIGHER TEMPERATURES * EASE OF PARALLELING Gate-Source Threshold Voltage VGS(th) -1 ID=-1mA, VDS= VGS * * EXCELLENT TEMPERATURE IMMUNITY HIGH INPUT IMPEDANCE Gate-Body Leakage Zero Gate Voltage Drain Current Drain Source Saturation Voltage (1) TYP. ZCP0545A VGS=0V -3.5 V IGSS 20 nA VGS= 20V, VDS=0V * IDSS -20 -2 A mA VDS=max. rating, VGS=0 VDS=0.8 x max. rating, VGS=0V, Tamb=125C (2) REVERSE BLOCKING CHARACTERISTIC WHICH IS INDEPENDENT OF GATE BIAS * LOW INPUT CAPACITANCE VDS(SAT) -3 -3 V V ID=-500mA, VDS=-10 V ID=-200mA, VDS=-5 V Static Drain-Source RDS(on) On-State Resistance (1) 6 VGS=-10V,ID=-500mA Input Capacitance (2) 120 pF Common Source Coss Output Capacitance (2) 20 pF Reverse Transfer Capacitance (2) Crss 5 pF Switching Times (2)(3) ton 150 ns 350 ns Ciss toff 250 VDS=-25 V, VGS=0V, f=1MHz VDD -25V, VGEN=-10V ID=250mA, RGS=50 (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator (4) One minute maximum duration. Exceeds common international automotive reverse battery test specifications D G S E-Line TO92 Compatible * CHARACTERISED FOR LOGIC LEVEL DRIVE APPLICATIONS * FLUORESCENT LAMP DRIVER * * AUTOMOTIVE LOAD DRIVERS HIGH VOLTAGE DC-DC CONVERTERS * DARLINGTON REPLACEMENT * TELECOMS HOOK SWITCH AND EARTH RECALL SWITCH ABSOLUTE MAXIMUM RATINGS (at Tamb=25C unless otherwise stated) PARAMETER SYMBOL Forward Drain-Source Voltage VDS Reverse Drain Source Voltage VSD -20 V Continuous Drain Current ID -0.32 A Practical Continuous Drain Current* IDP -0.37 A Pulsed Drain Current IDMR IDM -0.8 -0.4 A A @ Tamb=25C @ Tamb=125C VALUE UNIT -450 V Gate-Source Voltage VGS 20 V Power Dissipation Ptot 0.6 W Practical Power Dissipation* PDP Operating and Storage Temperature Range Tj:Tstg 0.8 W -55 to +125 C * With the device mounted in a typical manner on a P.C.B. with at least 1 sq. inch of copper. PAGE NO