P-CHANNEL ENHANCEMENT
MODE VERTICAL IGBT
This IGBT combines the high input impedance of the DMOSFET
with the high current density of the BJT.
FEATURES
* EXTREMELY LOW ON STATE VOLTAGE
* NO NEED TO DERATE FOR HIGHER TEMPERATURES
* EASE OF PARALLELING
* EXCELLENT TEMPERATURE IMMUNITY
* HIGH INPUT IMPEDANCE
* REVERSE BLOCKING CHARACTERISTIC WHICH IS
INDEPENDENT OF GATE BIAS
* LOW INPUT CAPACITANCE
* CHARACTERISED FOR LOGIC LEVEL DRIVE
APPLICATIONS
* FLUORESCENT LAMP DRIVER
* AUTOMOTIVE LOAD DRIVERS
* HIGH VOLTAGE DC-DC CONVERTERS
* DARLINGTON REPLACEMENT
* TELECOMS HOOK SWITCH AND EARTH RECALL SWITCH
ABSOLUTE MAXIMUM RATINGS (at Tamb
=25°C unless otherwise stated)
PARAMETER SYMBOL VAL UE UNI T
Forward Drain-Source Voltage VDS -450 V
Reverse Drain Source Voltage VSD -20 V
Continuous Drain Current ID-0.32 A
Practical Continuous Drain Current* IDP -0.37 A
Pulsed Drain Current @ Tamb
=25°C
@ Tamb
=125°C
IDMR
IDM
-0.8
-0.4
A
A
Gate-Source Voltage VGS ±20 V
Power Dissipation Ptot 0.6 W
Practical Power Dissipation* PDP 0.8 W
Operating and Storage Temperature Range Tj:Tstg -55 to +125 °C
* With the device mounted in a typical manner on a P.C.B. with at least 1 sq. inch of copper.
E-Line
TO92 Compatible
ZCP0545A
PAGE NO
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G
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ZCP0545A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Forward Drain-Source
Breakdown Voltage
BVDSS -450 V VGS=0V
Reverse Drain-Source
Breakdown Voltage (4)
BVSD -20 V
Gate-Source
Threshold Voltage
VGS(th) -1 -3.5 V ID=-1mA, VDS= VGS
Gate-Body Leakage IGSS 20 nA VGS=± 20V, VDS=0V
Zero Gate Voltage
Drain Current
IDSS -20
-2 µA
mA
VDS=max. rating, VGS=0
VDS=0.8 x max. rating, VGS=0V,
Tamb
=125°C (2)
Drain Source
Saturation Voltage (1)
VDS(SAT) -3
-3
V
V
ID=-500mA, VDS=-10 V
ID=-200mA, VDS=-5 V
Static Drain-Source
On-State Resistance (1)
RDS(on) 6ΩVGS=-10V,ID=-500mA
Input Capacitance (2) Ciss 120 pF
Common Source
Output Capacitance (2)
Coss 20 pF VDS=-25 V, VGS=0V, f=1MHz
Reverse Transfer
Capacitance (2)
Crss 5pF
Switching Times (2)(3) ton 150 ns VDD ≈−25V, VGEN
=-10V
ID=250mA, RGS=50Ω
toff 250 350 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
(4) One minute maximum duration. Exceeds common international automotive reverse battery test
specifications
P-CHANNEL ENHANCEMENT
MODE VERTICAL IGBT
This IGBT combines the high input impedance of the DMOSFET
with the high current density of the BJT.
FEATURES
* EXTREMELY LOW ON STATE VOLTAGE
* NO NEED TO DERATE FOR HIGHER TEMPERATURES
* EASE OF PARALLELING
* EXCELLENT TEMPERATURE IMMUNITY
* HIGH INPUT IMPEDANCE
* REVERSE BLOCKING CHARACTERISTIC WHICH IS
INDEPENDENT OF GATE BIAS
* LOW INPUT CAPACITANCE
* CHARACTERISED FOR LOGIC LEVEL DRIVE
APPLICATIONS
* FLUORESCENT LAMP DRIVER
* AUTOMOTIVE LOAD DRIVERS
* HIGH VOLTAGE DC-DC CONVERTERS
* DARLINGTON REPLACEMENT
* TELECOMS HOOK SWITCH AND EARTH RECALL SWITCH
ABSOLUTE MAXIMUM RATINGS (at Tamb
=25°C unless otherwise stated)
PARAMETER SYMBOL VAL UE UNI T
Forward Drain-Source Voltage VDS -450 V
Reverse Drain Source Voltage VSD -20 V
Continuous Drain Current ID-0.32 A
Practical Continuous Drain Current* IDP -0.37 A
Pulsed Drain Current @ Tamb
=25°C
@ Tamb
=125°C
IDMR
IDM
-0.8
-0.4
A
A
Gate-Source Voltage VGS ±20 V
Power Dissipation Ptot 0.6 W
Practical Power Dissipation* PDP 0.8 W
Operating and Storage Temperature Range Tj:Tstg -55 to +125 °C
* With the device mounted in a typical manner on a P.C.B. with at least 1 sq. inch of copper.
E-Line
TO92 Compatible
ZCP0545A
PAGE NO
D
G
S
ZCP0545A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Forward Drain-Source
Breakdown Voltage
BVDSS -450 V VGS=0V
Reverse Drain-Source
Breakdown Voltage (4)
BVSD -20 V
Gate-Source
Threshold Voltage
VGS(th) -1 -3.5 V ID=-1mA, VDS= VGS
Gate-Body Leakage IGSS 20 nA VGS=± 20V, VDS=0V
Zero Gate Voltage
Drain Current
IDSS -20
-2 µA
mA
VDS=max. rating, VGS=0
VDS=0.8 x max. rating, VGS=0V,
Tamb
=125°C (2)
Drain Source
Saturation Voltage (1)
VDS(SAT) -3
-3
V
V
ID=-500mA, VDS=-10 V
ID=-200mA, VDS=-5 V
Static Drain-Source
On-State Resistance (1)
RDS(on) 6ΩVGS=-10V,ID=-500mA
Input Capacitance (2) Ciss 120 pF
Common Source
Output Capacitance (2)
Coss 20 pF VDS=-25 V, VGS=0V, f=1MHz
Reverse Transfer
Capacitance (2)
Crss 5pF
Switching Times (2)(3) ton 150 ns VDD ≈−25V, VGEN
=-10V
ID=250mA, RGS=50Ω
toff 250 350 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
(4) One minute maximum duration. Exceeds common international automotive reverse battery test
specifications
