Absolute Maximum Ratings
Parameter Units
ID @ VGS = 0V, TC = 25°C Continuous Drain Current -6.5
ID @ VGS = 0V, TC = 100°C Continuous Drain Current -4.0
IDM Pulsed Drain Current -26
PD @ TC = 25°C Max. Power Dissipation 75 W
Linear Derating Factor 0.60 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 181 mJ
IAR Avalanche Current -6.5 A
EAR Repetitive Avalanche Energy7.5 mJ
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
TJOperating Junction -55 to 150
TSTG Storage Temperature Range °C
Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)
Weight 11.5 (typical) g
A
09/28/15
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Product Summary
Part Number BVDSS RDS(on) ID
IRF9230 -200V 0.80 Ω -6.5A
For footnotes refer to the last page
The HEXFET®technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this
latest “State of the Art” design achieves: very low on-
state resistance combined with high transconductance;
superior reverse energy and diode recovery dv/dt
capability.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching, ease of parelleling and
temperature stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
Features:
nRepetitive Avalanche Ratings
nDynamic dv/dt Rating
nHermetically Sealed
nSimple Drive Requirements
nEase of Paralleling
TO-3
REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6806
HEXFET®TRANSISTORS
JANTXV2N6806
THRU-HOLE -TO-204AE (TO-3)
REF:MIL-PRF-19500/562
IRF9230
200V, P-CHANNNEL
n ESD Rating: Class 1C per MIL-STD-750,
Method 1020
PD-90548D
IRF9230
2www.irf.com
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction to Case — — 1.67
RthJA Junction-to-Ambient — — 30 Soldered to a 2” square copper-clad board
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
ISContinuous Source Current (Body Diode) — — -6.5
ISM Pulse Source Current (Body Diode) — — -26
VSD Diode Forward Voltage — — -6.0 V Tj = 25°C, IS = -6.5A, VGS = 0V
trr Reverse Recovery Time — — 400 ns Tj = 25°C, IF = -6.5A, di/dt ≤ -100A/µs
QRR Reverse Recovery Charge — — 4.0 µC VDD ≤ -50V
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage -200 — — V VGS = 0V, ID = -1.0mA
∆BVDSS/∆TJTemperature Coefficient of Breakdown — -0.20 — V/°C Reference to 25°C, ID = -1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State — — 0.80 VGS = -10V, ID = -4.0A
Resistance — — 0.92 VGS = -10V, ID = -6.5A
VGS(th) Gate Threshold Voltage -2.0 — -4.0 V VDS = VGS, ID = -250µA
gfs Forward Transconductance 2.0 — — S VDS = -15V, IDS = -4.0A
IDSS Zero Gate Voltage Drain Current — — -25 VDS = -160V, VGS = 0V
— — -250 VDS = -160V
VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Leakage Forward — — -100 VGS = -20V
IGSS Gate-to-Source Leakage Reverse — — 100 VGS = 20V
QgTotal Gate Charge — — 31 VGS = -10V, ID = -6.5A
Qgs Gate-to-Source Charge — — 7.0 nC VDS = -100V
Qgd Gate-to-Drain (‘Miller’) Charge — — 17
td(on) Turn-On Delay Time — — 50 VDD = -100V, ID = -6.5A,
trRise Time — — 100 VGS = -10V, RG = 7.5Ω
td(off) Turn-Off Delay Time — — 100
tfFall Time — — 80
LS + LDTotal Inductance — 6.1 —
Ciss Input Capacitance — 700 VGS = 0V, VDS = -25V
Coss Output Capacitance — 200 — pF f = 1.0MHz
Crss Reverse Transfer Capacitance — 40 —
nA
nH
ns
µA
Ω
Measured from the center of
drain pad to center of source
pad
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
www.irf.com 3
IRF9230
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
IRF9230
4www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
13 a& b
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IRF9230
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
VDS
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RG
D.U.T.
+
-
IRF9230
6www.irf.com
-10V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
V
DD
DRIVER
A
15V
-20V
tp
V
(
BR
)
DSS
I
AS
QG
QGS QGD
VG
Charge
10
10
D.U.T. VDS
ID
IG
-3mA
VGS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
-12V
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
0
50
100
150
200
250
300
350
400
EAS , Single Pulse Avalanche Energy (mJ)
I
D
TOP -2.9A
-4.0A
BOTTOM -6.5A
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IRF9230
Footnotes:
ISD ≤ -6.5A, di/dt ≤ -120A/µs,
VDD ≤ -200V, TJ ≤ 150°C
Suggested RG = 7.5 Ω
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = -50V, starting TJ = 25°C,
Peak IL = -6.5A, VGS = -10V, L = 8.6mH Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 09/2015
Case Outline and Dimensions —TO-204AE (TO-3)
