MITSUBISHI Nch POWER MOSFET FS70VS-06 HIGH-SPEED SWITCHING USE OUTLINE DRAWING r Dimensions in mm 4.5 1.5MAX. 10.5MAX. 3.0 +0.3 -0.5 1.5MAX. 8.6 0.3 9.8 0.5 1.3 +0.3 0 -0 (1.5) FS70VS-06 1 B 5 0.5 q w e wr 10V DRIVE VDSS .................................................................................. 60V rDS (ON) (MAX) ............................................................. 7.5m ID ......................................................................................... 70A Integrated Fast Recovery Diode (TYP.) ............. 85ns 2.6 0.4 4.5 0.8 q GATE w DRAIN e SOURCE r DRAIN q e TO-220S APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol (Tc = 25C) Ratings Unit VDSS Drain-source voltage VGS = 0V 60 V VGSS ID Gate-source voltage Drain current VDS = 0V 20 70 V A IDM IDA Drain current (Pulsed) Avalanche drain current (Pulsed) 280 70 A A IS ISM Source current Source current (Pulsed) 70 280 A A PD T ch Maximum power dissipation Channel temperature 125 -55 ~ +150 W C -55 ~ +150 C g T stg -- Parameter Conditions L = 100H Storage temperature Weight Typical value 4.8 Feb.1999 MITSUBISHI Nch POWER MOSFET FS70VS-06 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25C) Symbol Parameter V (BR) DSS IGSS Drain-source breakdown voltage Gate-source leakage current IDSS VGS (th) Drain-source leakage current Gate-source threshold voltage rDS (ON) Drain-source on-state resistance VDS (ON) y fs Drain-source on-state voltage Forward transfer admittance Ciss Coss Input capacitance Output capacitance Crss td (on) Reverse transfer capacitance Turn-on delay time tr td (off) Rise time Turn-off delay time tf Fall time VSD Rth (ch-c) Source-drain voltage Thermal resistance trr Reverse recovery time Limits Test conditions ID = 1mA, VGS = 0V VGS = 20V, VDS = 0V VDS = 60V, VGS = 0V ID = 1mA, VDS = 10V ID = 35A, VGS = 10V Unit Min. Typ. Max. 60 -- -- -- -- 0.1 V A -- 2.0 -- 3.0 0.1 4.0 mA V -- 5.7 7.5 m ID = 35A, VDS = 10V -- 50 0.200 70 0.263 -- V S VDS = 10V, VGS = 0V, f = 1MHz -- -- 6540 1640 -- -- pF pF -- -- 790 95 -- -- pF ns -- -- 195 290 -- -- ns ns -- 210 -- ns -- -- 1.0 -- 1.5 1.0 -- 85 -- V C/W ns ID = 35A, VGS = 10V VDD = 30V, ID = 35A, VGS = 10V, RGEN = RGS = 50 IS = 35A, VGS = 0V Channel to case IS = 70A, dis/dt = -100A/s PERFORMANCE CURVES DRAIN CURRENT ID (A) 160 120 80 40 0 0 50 100 150 tw = 10ms 102 7 5 3 2 100ms 1ms 101 7 5 3 2 10ms DC 100 7 TC = 25C 5 Single Pulse 3 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 200 CASE TEMPERATURE TC (C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 10V 100 50 8V DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 3 2 80 8V 6V PD = 125W TC = 25C Pulse Test 60 VGS = 20V 10V 6V DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 200 5V 40 20 5V 40 TC = 25C Pulse Test 30 4.5V 20 10 4V 4V 0 0 0.4 0.8 1.2 1.6 2.0 DRAIN-SOURCE VOLTAGE VDS (V) 0 0 0.2 0.4 0.6 0.8 1.0 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS70VS-06 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 0.8 ID = 140A 0.6 100A 0.4 70A 0.2 0 30A 0 4 8 12 FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) TC = 25C VDS = 10V Pulse Test 20 104 7 5 3 2 2 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 40 105 7 5 3 2 20V 4 TRANSFER CHARACTERISTICS (TYPICAL) 60 3 2 VGS = 10V 6 DRAIN CURRENT ID (A) 80 0 8 0 20 TC = 25C Pulse Test GATE-SOURCE VOLTAGE VGS (V) 100 CAPACITANCE Ciss, Coss, Crss (pF) 16 10 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (m) TC = 25C Pulse Test 102 VDS = 10V 7 Pulse Test 5 4 3 2 TC = 25C 75C 125C 101 7 5 4 3 2 0 4 8 12 16 100 0 10 20 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) Tch = 25C f = 1MHZ VGS = 0V Ciss Coss 103 7 5 Crss 3 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 1.0 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 103 7 5 4 3 2 td(off) tf tr 102 7 5 4 3 td(on) Tch = 25C VDD = 30V VGS = 10V RGEN = RGS = 50 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS70VS-06 HIGH-SPEED SWITCHING USE 20 SOURCE CURRENT IS (A ) VDS = 10V 12 8 20V 40V 4 0 40 80 120 160 60 TC = 125C 40 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 2 100 7 5 4 3 2 -50 0 50 100 VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 150 BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tch (C) 0.4 75C 25C 20 0 101 7 VGS = 10V ID = 1/2ID 5 Pulse Test 4 3 10-1 VGS = 0V Pulse Test 80 100 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) 100 Tch = 25C ID = 70A 16 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 D = 1.0 100 7 0.5 5 3 0.2 2 0.1 PDM 10-1 7 5 3 2 tw 0.05 0.02 0.01 Single Pulse T D= tw T 10-2 -4 10 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999