Vishay Siliconix
SUD50P04-13L
Document Number: 73009
S-71660-Rev. B, 06-Aug-07
www.vishay.com
1
New Product
P-Channel 40-V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET® Power MOSFET
• 175 °C Junction Temperature
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See SOA curve for voltage derating.
b. Calculated based on maximum allowed Junction Temperature. Package limitation current is 50 A.
PRODUCT SUMMARY
VDS (V) rDS(on) (Ω)I
D (A)
- 40 0.013 at VGS = - 10 V - 60a
0.022 at VGS = - 4.5 V - 48
TO-252
SGD
Top View
Drain Connected to Tab
SUD50P04-13L-E3 (Lead (Pb)-free)
Ordering Information:
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage VDS - 40 V
Gate-Source Voltage VGS ± 20
Continuous Drain CurrentbTC = 25 °C ID
- 60c
TC = 100 °C - 43
Pulsed Drain Current IDM - 100
Continuous Source Current (Diode Conduction) IS- 60c
Avalanche Current L = 0.1 mH
IAS - 40
Avalanche Energy, EAS 80 mJ
Maximum Power DissipationbTC = 25 °C PD
93.7b
W
TA = 25 °C 3a
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambientat ≤ 10 sec RthJA
15 18
°C/W
Steady State 40 50
Maximum Junction-to-Case (Drain) RthJC 1.3 1.8
RoHS
COMPLIANT
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Document Number: 73009
S-71660-Rev. B, 06-Aug-07
Vishay Siliconix
SUD50P04-13L
New Product
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = - 250 µA - 40 V
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1.0 - 3.0
Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = - 40 V, VGS = 0 V - 1 µA
VDS = - 40 V, VGS = 0 V, TJ = 125 °C - 50
On-State Drain CurrentaID(on) V
DS = - 5 V, VGS = - 10 V - 50 A
Drain-Source On-State ResistancearDS(on)
VGS = - 10 V, ID = - 30 A 0.0105 0.013
Ω
VGS = - 10 V, ID = - 30 A, TJ = 125 °C 0.020
VGS = - 4.5 V, ID = - 20 A 0.017 0.022
Forward Transconductanceagfs VDS = - 15 V, ID = - 30 A 15 S
Dynamicb
Input Capacitance Ciss
VDS = - 25 V, VGS = 0 V, f = 1 MHz
3120
pFOutput Capacitance Coss 440
Reverse Transfer Capacitance Crss 320
Gate Resistance Rgf = 1 MHz 4.3 Ω
Total Gate ChargecQg
VDS = - 20 V, VGS = - 10 V, ID = - 50 A
63 95
nC
Gate-Source ChargecQgs 13
Gate-Drain ChargecQgd 16
Tur n - O n D e l ay Timectd(on)
VDD = - 20 V, RL = 0.4 Ω
ID ≅ - 50 A, VGEN = - 10 V, Rg = 2.5 Ω
15 25
ns
Rise Timectr18 30
Turn-Off Delay Timectd(off) 60 90
Fall Timectf47 70
Drain-Source Body Diode Characteristics
Pulse Current ISM - 100
Forward VoltageaVSD IF = - 50 A, VGS = 0 V - 1.0 - 1.5 V
Source-Drain Reverse Recovery Time trr IF = - 50 A, di/dT = 100 A/µs 36 55 ns
Document Number: 73009
S-71660-Rev. B, 06-Aug-07
www.vishay.com
3
Vishay Siliconix
SUD50P04-13L
New Product
TYPICAL CHARACTERISTICS 25 °C unless noted
Output Characteristics
Transconductance
Capacitance
0
20
40
60
80
100
0246810
VDS - Drain-to-Source Voltage (V)
- Drain Current (A)I
D
3 V
VGS = 10 thru 5 V
4 V
2 V
0
10
20
30
40
50
60
70
80
0 1020304050
VGS - Gate-to-Source Voltage (V)
- Transconductance (S)g
fs
TC = - 55 °C
25 °C
125 °C
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
0816 24 32 40
VDS - Drain-to-Source Voltage (V)
C - Capacitance (pF)
Ciss
Coss
Crss
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
20
40
60
80
100
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VGS - Gate-to-Source Voltage (V)
- Drain Current (A)
ID
25 °C
- 55 °C
TC = 125 °C
0.00
0.01
0.02
0.03
0.04
0.05
0 20406080100
- On-Resistance (Ω)
ID- Drain Current (A)
rDS(on)
VGS = 10 V
VGS = 4.5 V
0
2
4
6
8
10
0816 24 32 40 4856 64
- Gate-to-Source Voltage (V)
Qg- Total Gate Charge (nC)
VGS
VDS = 20 V
ID = 50 A
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Document Number: 73009
S-71660-Rev. B, 06-Aug-07
Vishay Siliconix
SUD50P04-13L
New Product
TYPICAL CHARACTERISTICS 25 °C unless noted
THERMAL RATINGS
On-Resistance vs. Junction Temperature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50 - 25 0 25 50 75 100 125 150 175
TJ- Junction Temperature (°C)
VGS = 10 V
ID = 30 A
rDS(on) − On-Resistance
(Normalized)
Source-Drain Diode Forward Voltage
VSD - S o urce-to-Drain Voltage (V)
- Source Current (A)I
S
100
10
1
0.3 0.6 0.9 1.2 1.5
TJ= 25 °C
TJ= 150 °C
0
Maximum Avalanche Drain Current
vs. Case Temperature
0
15
30
45
60
75
0 25 50 75 100 125 150 175
TC- Case Temperature (°C)
- Drain Current (A)
ID
Limited By Package
Safe Operating Area
TC = 25 °C
Single Pulse
VDS - Drain-to-Source Voltage (V)
- Drain Current (A)ID
200
10
0.1 1 10 100
0.1
100
1
Limited by rDS(on)
1 ms
10 ms
100 ms
DC
10 µs
100 µs
Normalized Thermal Transient Impedance, Junction-to-Ambient
Squa
r
e
W
a
v
e
P
u
l
se
D
u
r
at
i
o
n
(sec)
2
1
0.1
0.01
10-4 10-3 10-2 10-1 10
Normalized Effective Transient
Thermal Impedance
1 K
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
1001
Vishay Siliconix
SUD50P04-13L
Document Number: 73009
S-71660-Rev. B, 06-Aug-07
www.vishay.com
5
THERMAL RATINGS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?73009
Normalized Thermal Transient Impedance, Junction-to-Case
S
q
uare Wave Pulse Duration
(
sec
)
1
0.1
0.01
10-4 10-3 10-2 10-1 10
Normalized Effective Transient
Thermal Impedance
1 00
0.2
0.1
Duty Cycle = 0.5
1
0.05
0.02
Single Pulse
2
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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