2SK2373 Silicon N Channel MOS FET REJ03G1009-0300 Rev.3.00 Dec 27, 2006 Application High speed power switching Features * * * * * Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source. Suitable for low signal load switch Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) D 3 1 G 1. Source 2. Gate 3. Drain 2 S Note: Marking is "ZE-". Rev.3.00 Dec 27, 2006 page 1 of 5 2SK2373 Absolute Maximum Ratings (Ta = 25C) Item Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW 100 s, duty cycle 10 % Ratings 30 20 0.2 0.4 0.2 150 150 -55 to +150 Unit V V A A A mW C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Symbol V(BR)DSS Min 30 Typ -- Max -- Unit V Gate to source breakdown voltage Gate to source leak current V(BR)GSS IGSS 20 -- -- -- -- 2 V A IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 Zero gate voltage drain current Gate to source cutoff voltage IDSS VGS(off) Static drain to source on state resistance RDS(on) Ciss Coss Crss td(on) tr td(off) tf -- -- 1.4 1.0 17.8 25.4 3.7 50 125 660 400 1 2.0 7.5 7.0 -- -- -- -- -- -- -- A V pF pF pF ns ns ns ns VDS = 30 V, VGS = 0 ID = 10 A, VDS = 5 V ID = 20 mA, VGS = 4 V*2 ID = 10 mA, VGS = 10 V*2 Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Note: 2. Pulse Test -- 1.0 -- -- -- -- -- -- -- -- -- Rev.3.00 Dec 27, 2006 page 2 of 5 Test Conditions ID = 100 A, VGS = 0 VDS = 10 V, VGS = 0, f = 1 MHz ID = 0.1 A, VGS = 10 V, RL = 100 , PW = 2 s 2SK2373 Main Characteristics 1 200 (A) 0.3 ID 1 ms 150 0.1 0.03 ra pe Operation in this area is limited by RDS(on) 0.01 0.003 Ta = 25C 1 shot pulse 0.001 0 50 100 150 Ambient Temperature 0.1 200 n tio 50 O 100 C Drain Current D Channel Power Dissipation Maximum Safe Operation Area = s PW0 m 1 Pch (mW) Maximum Channel Dissipation Curve 0.3 1 3 10 Drain to Source Voltage Ta (C) Typical Output Characteristics 30 100 VDS (V) Typical Transfer Characteristics 0.5 2.0 5V (A) 4.5 V ID 1.6 ID (A) Pulse Test VDS = 10 V 0.3 Drain Current 1.2 Drain Current 0.4 4V 0.8 3.5 V 0.4 3V 75C 25C 0.2 Ta = -25C 0.1 VGS = 2.5 V 0 2 4 6 Drain to Source Voltage 8 0 10 VDS (V) 0.3 0.2 0.2 A 0.1 0.1 A ID = 0.05 A 0 4 8 12 Gate to Source Voltage Rev.3.00 Dec 27, 2006 page 3 of 5 16 20 VGS (V) 3 4 5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source On State Resistance RDS(on) () Drain to Source Saturation Voltage VDS(on) (V) 0.4 2 Gate to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage 0.5 1 10 5 Ta = 25C Pulse Test 2 VGS = 4 V 1 10 V 0.5 0.2 0.1 0.01 0.02 0.05 0.1 Drain Current 0.2 ID 0.5 (A) 1 2SK2373 Typical Capacitance vs. Drain to Source Voltage 1 100 0.5 Ta = -25C Capacitance C (pF) Forward Transfer Admittance |yfs| (S) Forward Transfer Admittance vs. Drain Current 0.2 75C 25C 0.1 0.05 0.02 0.1 0.2 0.5 1 Reverse Drain Current IDR (A) Ciss Crss 3 1 VGS = 0 f = 1 MHz 0.5 Pulse Test 0.4 0.3 10 V VGS = 0 5V 0.1 0.4 0.8 1.2 Source to Drain Voltage Rev.3.00 Dec 27, 2006 page 4 of 5 1.6 0 10 20 30 40 50 Drain to Source Voltage VDS (V) Reverse Drain Current vs. Source to Drain Voltage 0 10 0.1 0.05 Drain Current ID (A) 0.2 Coss 0.3 VDS = 10 V Pulse Test 0.01 0.01 0.02 30 2.0 VSD (V) 2SK2373 Package Dimensions JEITA Package Code SC-59A Package Name MPAK RENESAS Code PLSP0003ZB-A D Previous Code MPAK(T) / MPAK(T)V A Q e E c HE L A MASS[Typ.] 0.011g LP L1 A3 A x M S A b Reference Dimension in Millimeters Symbol Min Nom Max e A2 A e1 A1 S b I1 c b2 A-A Section Pattern of terminal position areas A A1 A2 A3 b c D E e HE L L1 LP x b2 e1 I1 Q 1.0 0 1.0 0.35 0.1 2.7 1.35 2.2 0.35 0.15 0.25 1.1 0.25 0.4 0.16 1.5 0.95 2.8 1.3 0.1 1.2 0.5 0.26 3.1 1.65 3.0 0.75 0.55 0.65 0.05 0.55 1.95 1.05 0.3 Ordering Information Part Name 2SK2373ZE-TL-E 2SK2373ZE-TR-E Quantity 3000 pcs 3000 pcs Shipping Container Taping Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 Dec 27, 2006 page 5 of 5 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. 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