2SA1316
2003-03-24
1
TO SHIBA T r ansistor Silicon PNP Epitaxial Type (P CT process)
2SA1316
For Low Noise Audio Amplifier Applications and
Recommended for the First Stages of MC Head
Amplifiers
· Very low noise in the region of low signal source impedance
equivalent input noise voltage: En = 0.6 nV/Hz1/2 (typ.)
· Low pulse noise. Low 1/f noise
· Low base spreading resistance: rbb’ = 2.0 Ω (typ.)
· Complementary to 2SC3329
Maximum Ratings (Ta =
==
= 25°C)
Characteristics Symbol Rating Unit
Collect or-base voltage VCBO -80 V
Collect or-emitter voltage VCEO -80 V
Emitter-base voltage VEBO -5 V
Collector current IC -100 mA
Base current IB -20 mA
Collect or power diss i pation PC 400 mW
Junction temperature Tj 125 °C
Storage temperature range Tstg -55~125 °C
Electrical Characteristics (Ta =
==
= 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO V
CB = -80 V, IE = 0 ¾ ¾ -0.1 mA
Emitte r cut-off cur r ent IEBO V
EB = -5 V, I C = 0 ¾ ¾ -0.1 mA
Collect or-em it t er breakdown voltage V (BR) CEO IC = -1 mA, IB = 0 -80 ¾ ¾ V
DC current gain hFE
(Note) VCE = -6 V, I C = -2 mA 200 ¾ 700
Collect or-em it t e r saturati on vol tage VCE (sat) I
C = -10 mA, IB = -1 mA ¾ ¾ -0.1 V
Base-emit ter voltage VBE V
CE = -6 V, IC = -2 mA ¾ -0.6 ¾ V
Base spreading resistance rbb’ V
CE = -6 V, IC = -1 mA, f = 100 MHz ¾ 2.0 ¾ W
Transiti on frequenc y fT V
CE = -6 V, IC = -1 mA, f = 100 MHz ¾ 50 ¾ MHz
Collect or output capaci t ance Cob V
CB = -10 V, IE = 0, f = 1 MHz ¾ 6.2 ¾ pF
VCE = -6 V, IC = -0.1 mA
f = 10 Hz, RG = 10 kW ¾ 1 6
VCE = -6 V, IC = -0.1 mA
f = 1 kHz, RG = 10 kW ¾ 0.5 2
Noise figure NF
VCE = -6 V, IC = -0.1 mA
f = 1 kHz, RG = 100 W ¾ 2.5 ¾
dB
Note: hFE classification GR: 200~400, BL: 350~700
Unit: mm
JEDEC TO-92
JEITA SC-43
TOSHIBA 2-5F1B
Weight: 0.21 g (typ.)
2SA1316
2003-03-24
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2SA1316
2003-03-24
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2SA1316
2003-03-24
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000707EA
A
RESTRICTIONS O N PRODUCT USE
