TN2124 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package Product marking for SOT-23: BVDSS / BVDGS RDS(ON) (max) VGS(th) (max) TO-236AB* Die N1C 240V 15 2.0V TN2124K1 TN2124ND where = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels. Features Advanced DMOS Technology Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode Supertex vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. High input impedance and high gain Complementary N- and P-channel devices Applications Logic level interfaces - ideal for TTL and CMOS Solid state relays Package Options Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Drain Telecom switches Absolute Maximum Ratings Gate Source Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BVDGS TO-236AB Gate-to-Source Voltage 20V (SOT-23) -55C to +150C top view Operating and Storage Temperature Soldering Temperature* 300C Note: See Package Outline section for dimensions. * Distance of 1.6 mm from case for 10 seconds. 7-75 TN2124 Thermal Characteristics Package ID (continuous)* ID (pulsed) Power Dissipation @ TA = 25C C/W C/W ja IDR* IDRM 134mA 250mA 0.36W 200 350 134mA 250mA TO-236AB jc * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25C unless otherwise specified) Parameter Min BVDSS Drain-to-Source Breakdown Voltage 240 VGS(th) Gate Threshold Voltage 0.8 V GS(th) Change in VGS(th) with Temperature IGSS Gate Body Leakage IDSS Zero Gate Voltage Drain Current ID(ON) ON-State Drain Current RDS(ON) Static Drain-to-Source ON-State Resistance Typ 0.1 Max Change in RDS(ON) with Temperature GFS Forward Transconductance CISS Input Capacitance COSS 0.7 100 Conditions V ID = 1mA, VGS = 0V 2.0 V VGS = VDS, ID = 1mA -5.5 mV/C ID = 1mA, VGS = VDS 100 nA VGS = 20V, VDS = 0V 1 A VGS = 0V, VDS = Max Rating 100 A VGS = 0V, VDS = 0.8 Max Rating TA = 125C mA VGS = 4.5V, VDS = 25V 140 RDS(ON) Unit 30 VGS = 3V, ID = 25mA 15 VGS = 4.5V, ID = 120mA 1.0 %/C ID = 120mA, VGS = 4.5V 170 m 38 50 Common Source Output Capacitance 9 15 CRSS Reverse Transfer Capacitance 3 5 td(ON) Turn-ON Delay Time 4 7 tr Rise Time 2 5 td(OFF) Turn-OFF Delay Time 7 10 tf Fall Time 9 12 VSD Diode Forward Voltage Drop trr Reverse Recovery Time VDS = 25V, ID = 120mA pF VGS = 0V, VDS = 25V, f = 1MHz ns VDD = 25V ID = 140mA RGEN = 25 V ISD = 120mA, VGS = 0V ns ISD = 120mA, VGS = 0V 1.8 400 Symbol Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit VDD RL 10V 90% PULSE GENERATOR INPUT 0V 10% t(ON) td(ON) Rgen t(OFF) tr td(OFF) OUTPUT tF D.U.T. VDD 10% INPUT 10% OUTPUT 0V 90% 90% 7-76 TN2124 Typical Performance Curves Output Characteristics Saturation Characteristics 2.0 1.0 1.6 0.8 8V 1.2 VGS = 10V ID (amperes) ID (amperes) VGS = 10V 8V 6V 4V 0.8 6V 4V 0.6 3V 0.4 3V 0.2 0.4 2V 2V 0 0 0 10 20 30 40 50 0 2 4 VDS (volts) 1.0 0.8 0.8 VDS= 25V PD (watts) GFS (siemens) 8 10 Power Dissipation vs. Temperature Transconductance vs. Drain Current 1.0 0.6 6 VDS (volts) -55C 0.4 0.6 SOT-23 0.4 0.2 0.2 25C TA= 125C 0 0 0.2 0.4 0 0.6 0.8 0 1.0 25 50 125 100 150 Thermal Response Characteristics Maximum Rated Safe Operating Area 1.0 Thermal Resistance (normalized) 1.0 SOT-23 (pulsed) ID (amperes) 75 TA ( C) ID (amperes) 0.1 SOT-23 (DC) 0.01 0.8 0.6 0.4 SOT-23 T A = 25C P D = 0.36W 0.2 TA= 25C 0 0.001 0 10 100 0.001 1000 VDS (volts) 0.01 0.1 tp (seconds) 7-77 1 10 TN2124 Typical Performance Curves BVDSS Variation with Temperature On-Resistance vs. Drain Current 50 1.1 VGS = 3V RDS(ON) (ohms) BVDSS (normalized) 40 1.0 30 20 VGS = 4.5V 10 0.9 0 -50 0 50 100 0 150 0.2 0.4 0.6 0.8 1.0 Tj ( C) ID (amperes) Transfer Characteristics VTH and RDS Variation with Temperature 1.0 2.0 RDS(ON) @ 4.5V, 120mA 1.4 1.6 125C VGS(th) (normalized) TA = -55C ID (amperes) 25C 0.6 VDS = 25V 0.4 1.2 1.2 1.0 0.8 0.8 VGS(th) @ 1mA 0.2 0.4 0.6 0 0 0 2 4 6 8 -50 10 0 50 100 150 Tj ( C) VGS (volts) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics 100 10 8 f = 1MHz VGS (volts) C (picofarads) 75 50 CISS 6 VDS = 10V 100pF 4 VDS = 40V 25 2 COSS CRSS 32 pF 0 0 0 10 20 30 0 40 0.2 0.4 0.6 QG (nanocoulombs) VDS (volts) 7-78 0.8 1.0 RDS(ON) (normalized) 0.8