UTC BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES *Suitable for AF-Driver stages and low power output stages *Complement to BC817 / BC818 2 1 3 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25C, unless otherwise noted) PARAMETER SYMBOL Collector-Emitter Voltage BC807 BC808 Collector-Emitter Voltage BC807 BC808 Emitter-Base Voltage Collector Current (DC) Collector Dissipation Junction Temperature Storage Temperature VALUE UNIT -50 -30 V V -45 -25 -5 -800 -310 150 -65 to +150 V V V mA mW C C VCES VCE0 VEBO Ic Pc Tj Tstg ELECTRICAL CHARACTERISTICS (Ta=25C, unless otherwise noted) PARAMETER Collector-Emitter Breakdown Voltage BC807 BC808 Collector-Emitter Breakdown Voltage BC807 BC808 Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain UTC SYMBOL BVCEO BVCES BVEBO ICES IEBO hFE1 hFE2 TEST CONDITIONS MIN TYP MAX UNIT Ic=-10mA, IB=0 -45 -25 V V -50 -30 -5 V V V nA nA IC=-0.1mA, VBE=0 IE=-0.1mA, Ic=0 VCE=-25V, VBE=0 VEB=-4V, Ic=0 Ic=-100mA, VCE=-1V Ic=-300mA, VCE=-1V UNISONIC TECHNOLOGIES 100 60 -100 -100 630 CO. LTD 1 QW-R206-026,A UTC BC807/BC808 PARAMETER Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance PNP EPITAXIAL SILICON TRANSISTOR SYMBOL TEST CONDITIONS VCE(sat) VBE(on) fT Cob Ic=-500mA, IB=-50mA Ic=-300mA, VCE=-1V VCE=-5V, Ic=-10mA, f=50MHz VCB=-10V, f=1MHz MIN TYP MAX UNIT -0.7 -1.2 V V MHz pF 100 12 Classification of hFE RANK hFE1 hFE2 16 100-250 25 160-400 40 250-630 60- 100- 170- Marking Code TYPE MARK UTC 807-16 9FA 807-25 9FB 807-40 9FC 808-16 9GA UNISONIC TECHNOLOGIES 808-25 9GB 808-40 9GC CO. LTD 2 QW-R206-026,A UTC BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTICS UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R206-026,A UTC BC807/BC808 UTC PNP EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO. LTD 4 QW-R206-026,A