f i |This documentation and process conversion | |measures necessary to comply with this | |reviston shall be completed by 22 Oct 94. \ OO | INCH-POUND | Lo MIL-S-19500/4200 22 July 1994 SUPERSEDING MIL-5-19500/420 15 June 1992 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER, GENERAL PURPOSE TYPES 1N5550 THROUGH 1N5554, IN5550US THROUGH 1N5554US JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is approved for use by all Depart- ments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the detail requirements for silicon, general purpose, semiconductor diodes. Four levels of product assurance are provided for each device type as specified im MIL-S-19500. Two levels of product assurance are provided for each unencapsulated device type. 1.2 Physical dimensions. See figure 1 (similar to 00-41), figure 2, and figures 3, 4, and 5 for JANHC AND JANKC. 1.3 Maximum ratings. Unless otherwise specified, T, = +25C and ratings apply to all case outlines. | | | | | | | | | | | Igy | Tegy ITop T | ot | : on. : p STG ma) | Type IVeBRymin iVauy [T= +55 c; I1p = 3 Ade | IT, = MB so | | | | Jt = .375 inch It, 21/120 s | (Tyy | 2f 4&/ | | | | | / 2/3/ [Ty = #55C | | | | | | | | | | | | | | | | | Vide |de | Ade | ACpk) 2 Adc | | | | | | | |1N5550, 1N5550uUS | 240 | 200 | 5 | 100 -65 to +175 3 | }1N5551, INS5S1US | 460 | 400 | 5 | 100 -65 to +175 3 | |1N5552, 1NSS52us | 660 | 600 | 5 | 100 -65 to +175 3 | }1n5553, 1N5553US | 880 | 800 | 5 | 100 -65 to +175 3 \ J1NS554,_1N5554US | 1100 {1,000 | 5 | 100 {-65 to +175 3 | 1/ Derate linearly at 41.6 mA/C above TF +55C at L = .375 inch (see 6.4). 2/ An Ig of up to 6 A de is allowable provided that appropriate heat sinking or forced air cooling maintains the maximum junction temperature at or below +175C as proven by the junction temperature rise test (see 6.4). Barometric pressure reduced: 1NS5550, 1N5551, 1N5552 - 8 mmdg (100,000 feet). 1N5553, 1N5554 - 33 mmHg (70,000 feet). 3/ Does not apply to surface mount devices. 4/ Derate linearly at 25 mA/C above T, = 455C. | | |Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be | of use in improving this document should be addressed to: NASA/Parts Project Office (NPPO), NASA | |Goddard Space Flight Center, Code 311.A, Greenbelt, MD 20771 by using the Standardization | |Document Improvement Proposal (00 Form 1426) appearing at the end of this document or by letter. | AMSC N/A FSC 5961 DISTRIBUTION STATEMENT A. Approved for public release; distribution js unlimited. Mm! 0000125 0035446 344MIL-S-19500/420D | | | | Dimensions | Notes | | | | | | Inches | Millimeters | | | | | | | | | {Min | Max | Min {Max | | | | | | | | 8 | .037 042 | 0.94 | 1.07 | | | | | | | | |_g@o | .115 | .180 | 2.92 4.57 3.4 | | | | | {_G | .130 -300 | 3.30 7.62 | 3 | | | | | | |_t | .900 1.300 | 22.86 33.02 | | NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. Dimensions G and $0 include all components of the diode periphery except the sections of leads over which the diameter is controlled. 4. Dimension $0 shall be measured at the largest diameter. FIGURE 1. Semiconductor device, diode 1N5550_ through 1N5554, JAN, JANTX, JANTXV, and JANS. Mm 000015 003544? 280MIL-S-19500/4200 $n G -o~7~7~_ e Fo | F Pp 5 0 1 f ey SN / \ i | \ / SA | 7 L 4x C|.006 (0.15) | | | Dimensions | | | | |_ttr | Inches | Millimeters | | | | | | | | { Min | Max | Min | Max | | | | | | | |_G | .200 | .275 | 5.08 [| 6.99 | | | | | | | |_F | .019 | .036 | 0.48 | 0.86 | | | | | | | |_s | .003 | [0.08 | | | | | | | | |_o | 137 | 180 | 3.48 | 47 | NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. FIGURE 2. mM o0001e5 0035448 117 Physical dimensions of 1N5550US through 1N5S554US.MIL~S-19500/420D A B yf ern8s A MIN. GOLD c / J VX I [ l I I 4000 A MIN. GOLD | | Dimensions Symbol | Inches | Millimeters | | [|_; 7 | { Min | Max Min | Max | A -085 | .091 | 2.16 | 2.31 | 8 | .072 | .078 | 1.83] 1.98 | | c | .008 | .014 0.20 | 0.36 | NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. FIGURE 3. JANHCA and JANKCA (A-version) die dimensions. me 0000125 0035449 053 maMIL-S-19500/4200 P5552 peor F505 05050509050 + Se os x SKS SHOT SOOO ANODE CATHODE a _ lS of 2 . Tz = og O Q oO oe Oo . oF 2 Lo }<e <<. s Millimeters T | j Dimensions | } qT | 1 T | } t | j T | 1 Dimensions are in inches. NOTES: 4. Metric equivalents are given far general information only. 2. JANHCB (B-version) die dimensions. FIGURE 4. M 00001e5 0035450 875 8 ie MLL-S-19500/420D ege A CATHODE Qe > oO yon A MIN GOLD f T i { | Dimensions | | | | Symbol | Inches | Millimeters | t- 1 | | | Min | Max { Min | Max | 1 } | [ } r T T i 1 1 | a | .060 | .065 | 1.52 | 1.65 | /__+} +++ | 8 | .052 | .058 | 1.32 | 1.47 | L 1 j | } _| T T t i 1 | | 008 | .014 | 0.20] 0.36 | b 1 lL. L l __} NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. FIGURE 5. me oo00LeS 0035451 70, JANHCC (C-version) die dimensions.MIL-S-19500/4200 1.4 Primary electrical characteristics. Unless otherwise specified, Ty = 425C. = o Type Igo at T, = +100C | | | | | | | Vz at I, = 9.0 ACpk) | a1 { | | | 2% duty cycle, 8.3 ms | | | | | max pulse width | | | | | | | { | Min V(pk) | Max V<pk) | pA de (max) at Vp (V de) | HA de (max) at Vp (V de) | | | | | | |1N5550,1N5550US | 0.6 = | 1.2 | 1.0 200 | 75 200.Otsi| |1N5551,1N5551Us | 0.6 = | 1.2 } 1.0 400 | 75 400 | |1N5552,1N5552us | 0.6 | 1.2 } 1.0 600 | 75 600 | |1N5S53,1NS553US | 0.6 | 1.3 } 1.0 goo | 75 soos |1N5554,1N5554US | 0.6 | 1.3 | 1.0 1,000 | 75 1,000 | | | | | | 2. APPLICABLE DOCUMENTS 2.1 Government documents. 2.1.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those Listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in this solicitation (see 6.2). SPECIFICATIONS MILITARY MIL-S-19500 - Semiconductor Devices, General Specification for. STANDARD MILITARY MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of federal and military specifications, standards, and handbooks are available from the Defense Printing Service Detachment Office, Building 40 (Customer Service), 700 Robbins Avenue, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1. Associated detail specification. The individual item requirements shall be in accordance with MIL-S-19500 and as specified herein. 3.2 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used in this specification are defined in MIL-S-19500 and as defined herein. US 2.2 ee ee ee es Unleaded or surface mounted (square encapped diodes). 3.3 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-S-19500 and on figures 1, 2, 3, 4, and 5. 3.3.1 Lead finish. Lead finish shall be solderable as defined in MIL-S-19500, MIL-STD-750, and herein. Mm c00012eS 0035452 44a m@mp ooooles 0035453 Shu @ MIL-S-19500/4200 3.3.2 Diode construction. These devices shall be constructed utilizing non-cavity double plug construction with high temperature metallurgical bonding between both sides of the silicon die and terminal pins (see MIL-S-19500). Metallurgical bond shall be in accordance with the requirements of category I in MIL-S-19500. US version devices shall be structurally identical to the non-surface mount devices except for lead terminations. 3.4 Marking. Device marking shall be in accordance with MIL-S-19500. 3.4.1 Marking of US version. For US version only, all marking may be omitted from the device except for the cathode marking. All marking which is omitted from the body of the device shall appear on the label of the initial container. 3.4.2 Polarity. The polarity shall be indicated with a contrasting color band to denote the cathode end. Alternately for surface mount (US) devices, a minimum of three evenly spaced contrasting color dots around the periphery of the cathode end may be used. No color coding will be permitted. 4. QUALITY ASSURANCE PROVISIONS 4.1 Sampling and inspection. Sampling and inspection shall be in accordance with MIL-S-19500 and as specified herein. 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-S-19500. 4.2.1 Group E inspection. Group E inspection shall be conducted in accordance with MIL-S-19500 and table III herein. 4.2.2 JANHC and JANKC die. Qualification shall be in accordance with MIL-S-19500, appendix H. 4.3 Screening (JANTX, JANTXV, and JANS Levels only). Screening shall be in accordance with table II of MIL-S-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the Limits of table I herein shall not be acceptable. JANC die shall be in accordance with MIL-S-19500, appendix H. | | |Screen (see table | Measurement | J1I of MIL-S-19500) | | JANS level JANTX and JANTXV Levels | | | | V Thermal impedance (see 4.3.3) Thermal impedance (see 4.3.3) | | | | | 9 Veq and Ip, Not applicable | | 11 Veq and Ina; AV, = 20.1 V de Veq and I | afi, = 2284 nA de or 100 percent of " R1 | | initial value whichever is greater. | | : | 12 See 4.3.1. See 4.3.1. | | 13 2/ Subgroups 2 and 3 of table I herein; |Subgroup 2 of table I herein; | Alpy = 100 percent of initial reading |Al,, = 100 percent of initial reading | or 250 nA dc, whichever is greater. or 250 nA de, whichever is greater. | AV, = 2.1 V de change from initial AV 4 = 2.1 V de change from initial | value. Scope display evaluation value. Scope display evaluation | | (see 4.5.3). (see 4.5.3). 1/ Thermal impedance shall be performed any time after screen 3. 2/ Except thermal impedance, if already performed. 4.3.1 Power burn-in test conditions. Power burn-in conditions (all levels) are as follows (see 4.5.1): T, = room ambient as defined in the general requirements of 4.5 of MIL-STD-750; Vp = full rated Voig (see 1.3); f = 50-60 Hz, Ip = 3 A de.MIL-S-19500/420D 4.3.2 Screening (JANHC and JANKC). Screening of die shall be in accordance with MIL-S-19500, appendix H. 4.3.3 Thermal impedance Z_,, measurements for screening. The Zojx Measurements shall be performed in accordance with MIL-ST0-750, method 3101. The maximum Limit shall not to exceed the group A, subgroup 2 Limit for Zo jy in screening (table II of MIL-S-19500). 4.3.3.1 Thermal impedance (Z,,, measurements) for initial qualification or requalification. The ZaJX measurements shall be performed in accordance with MIL-STD-750, method 3101 (read and record date 7 ), Z64x shall be supplied on one lot (500 pieces minimum and a thermal response curve shatl be submitted. Twenty-two of these samples shall be serialized and provided to the qualifying activity for correlation prior to shipment of parts. Measurements conditions shall be in accordance with 4.4.1. 4.4 Quality conformance inspection. Quality conformance inspection shall be in accordance with MIL-S-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-S-19500 and table I herein. The following test conditions shall be used for 2 , group A inspection: eJX Zax = 1.5C/W. To + mA to 10 mA. Ne ee 5 A minimum. tye 10 ms. typ ee 100 Us maximum. Toy ee 5 Us maximum. 4.4.2 Group B inspection. -Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table IVa (JANS) and table IVb (JAN, JANTX and JANTXV) of MIL-S-19500. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable inspections of table I, group A, subgroup 2 and table II herein except 26K shall be performed after intermittent life only. 4.4.2.1 Group B inspection, table IVa (JANS) of MIL-S-19500. Subgroup Method Condition B3 4066 Tegy = 100 ACpk), 10 surges of 8.3 ms each at 1-minute intervals, superimposed on Ig = 2 A de; Vp = rated V, (see 1.3); Ta = +55C. This test shall be performed on each sublot. For mounting conditions, see 4.5.1.1 and 4.5.1.2. B4 1036 Ig =3 Adc; f = 50-60 Hz; T, = room ambient as defined in the general requirements of (see 4.5) of MIL-STD-750. Ve = maximum fates eR (see 1.3 and 4.5.1); ton = tog ? 3 minutes minimum for 2 cy cles. BS 1027 Ta = +150C minimum, Ig = 3 A de minimum. Adjust Ty or Ig as required by the corresponding chosen value of T, or I, to achieve alot T, = +275C. Delta Limits: Alp = 100 percent or 50 nA, whichever is greater. 86 4081 or TF +25C to +35C; Rot = 22C/W maximum.L = .375 inch; Roy 3101 endeap = 11C/W maximum kus version). B7 Peak reverse power: See figure 9 and 4.5.6; PRM = 1000 watts (minimum). This test shall be performed on each sublot. LTPO = 10. Mm 00001e5 0035454 410MIL-S-19500/4200 4.4.2.2 Group B inspection, table IVb (JAN, JANTX and JANTXV) of MIL-S-19500. Subgroup Method Condition Ba 4066 leony = 100 A(pk), 10 surges of 8.3 ms each at 1-minute intervals, superimposed on Ip = 2A de; Va = rated V WM (see 1.3); T= +#55C. This test shall be performed on each sublot. For mounting conditions, see 4.5.1.1 and 4.5.1.2. 83 1027 Ig = 3 Adc; f = 50-60 Hz; T, = room ambient as defined in the general requirements of (see 4.5) of MIL-STO-750. V, = rated V RWM (see 1.3 and 4.5.1). For mounting conditions see 4.5.1.1 and 4.5.1.2. 87 Peak reverse power: See figures 9 and 4.5.6; PRM = 1000 watts (minimum). This test shall be performed on each sublot. LTPO = 10. 4.4.3 Group inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table V of MIL-S-19500. Electrical measurements (end points) and delta requirements shall be in accordance with the applicable inspections of table I, group A, subgroup 2. 4.4.3.1 Group C inspection, table V_of MIL-S-19500. Subgroup Method Condition c2 1056 Test Condition 8 t2 2036 Test Condition A Tension: Weight = 5 pounds; t = 15 seconds Fatigue: Test condition E; weight = 2 pounds NOTE: Terminal strength not applicable for US version devices. c2 1021 Omit initial conditioning. cs Not applicable. c6 1026 Ig = 3 Adc; f = 50-60 Hz; Ta = room ambient as defined in the general requirements of (see 4.5) of MIL-STD-750. Va = rated Vp 4 (see 1.3 and 4.5.1); for mounting conditions, see 4.5.1.1 and 4.5.1.2. 4.5 Methods of inspection. Methods of inspection shall be as specified in appropriate tables and as follows. 4.5.1 Steady-state operation life. A half-sine wave of the specified peak voltage shall be impressed across the diode in the reverse direction followed by a half-sine waveform of the specified average rectified current. The forward conduction angle of the rectified current shall not be greater than 180 nor less than 150. 4.5.1.1 Mounting sonditions. At the option of the manufacturer, any clips or heat sink mounting configurations may be utilized provided that I, is increased so that the junction temperature of each diode is maintained at +145C miniaun. 4.5.1.2 alternate mounting conditions (for -US devices). At the option of the manufacturer, any clips or heat sink mounting configurations may be utilized provided that one of the following conditions be met: a. Tre = +75C to +125C, Vaum = fated, f = 50-60 kz, Ig = 3 amps. b. Temporary attachment of leads or equivalent (thermal properties not to exceed the Leaded part) f = 50-60 Hz. Iy = 3 amps, T= +145C miniaua, Vp = rated Yawn: 10 me ooogLes o0354s5 357MIL-S-19500/4200 4.5.2 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.3 Scope display evaluation. Scope display evaluation shall be in accordance with test method 4023 of MIL-STD-750. 4.5.4 Junction temperature rise test. This test shall be performed in accordance with 4.5.4.1 and figures 6, 7, and 8. 4.5.4.1 Test procedure. Determine the temperature coefficient of forward voltage (TCV_) using a lower reference temperature, (T4) of 25C to 30C, an upper reference temperature (T5) of 150C to 200C, and a reference current (Ipep) of 1 to 10 mA dc. TCV, = Ve4 - Veo Where Ve4 = Ve at Ther at Ty and Ts - Ty Veo = Ve at loer at To At the option of the manufacturer, an average TCVe based on a random sample of at Least 25 production rectifiers may be used in the determination of AT). The diode shall be mounted at the specified lead length, and with $1 open (I, = 0) read V., = V, at I,--. Close 51 and adjust the power source and R, for the specified I,. After thermal equilibrium has been established at the specified lead temperature tt), read Viz = V, atl at 250 + 150 ps after the power pulse. I shall be within #1 percent of the value F REF : . REF ~ . . used for calibration. Forced moving air or draft shall not be permitted across the devices during test. Veg ~ Ves at, = TCV, 4.5.5 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with test method 3701 or 4081 of MIL-STD-750. Read and record data in accordance with group herein and shall be included in the qualification report. Forced moving air or draft shall not be permitted across the devices during test. The maximum limit for Ry under these test condition shall be Rost S 22C/W for L = .375; Raji = 41C/W for L= 0 (US version). the following conditions shall apply: e a eee ee ee eee 2 A minimum. bo tp... ee. ce ee ee Thermal equilibrium. Co Lye ee ee eee 1.0 mA to 10 mA. Bota ee ee ee oe 100 Us maximum. The device shall be allowed to readch equilibrium at current 1, before the measurement shall be made (t, 2 25 sec). H LS = Lead spacing = 9.53 mm (.375 inch) minimum for leaded devices and LS = 0 minimum for unleaded devices as defined on figure 6 below: COPPER LEAD CLAMP COPPER LEAD CLAMP INFINITE HEAT-OISSIPATOR NOTES: 1. Dimensions are in millimeters. 2. Metric equivalents are given for general information only. 11 Me 0000125 0035456 213MIL-S-19500/4200 TABLE I. Group A_inspection. | | Inspection 1/ MIL-STD-750 Symbol | Method | Conditions | Subgroup 1 | [ | | | [Visual and mechanical inspection nN Subqrou Thermal impedance 3101 | | | | | | | 4011 | | | ! | | | | | | | | | | | | | pr | Forward voltage | [lp = 9.0 ACpk); duty cycle = 2% | | (pulsed); t = 8.3 ms 1N5550, 1NS550US | 1N5551,1N5551US | | 1N5552, 1N5552US | [ 1N5553, 1N5553US | 1N5554, 1NS554US | | | Forward voltage | | | | | | | | | | | | | | | | | | | | | Reverse current leakage 1NS550, 1NSS50US < on = 1N5551, 1NSS51US 1NS552,1N5552US 1N5553, 1N5553US BE " 1NS554, 1N5554US Breakdown voltage 4021 (diodes) BR 50 WA de 50 PA de | 50 pA de 50 LA dc R= 20 HA de 1N5551, 1N5551US 1N5552, 1NS552US 1N5553, 1NS553us 1N5554, 1N5554uUS Subgroup 3 High temperature T, = +100C operation: Reverse current 4016 leakage o oO 2 fad > a _ ~ N 1N5550, 1NSSSQUS 1N5551, 1N5SS1US 1N5552, 1NSSS2US 1N5553, 1N5553US 1N5554, 1N5554uS 8888 <<< < 3 <aaaa aaoea a a | | | | | | | | | | | | | | | | | | | | 1N5550, 1N5550US | | | | | | | | | | | | | | | | | | | Limits Min o9990 RAAAD | | | | | | | | | | | | | | | | | | | | | | Ma wa = . ) i la to te te 42 2a mo ooo0o x Oo Units |HA de MA de JA de HA de pA de See footnotes at end of table. 12 M@ 0000125 003545? 1cT @MIL-S-19500/420D TABLE 1. Group A_inspection - Continued. | | | | | | Subgroups 5, 6, and 7 | | | | Inspection 1/ | MIL-STD-750 | Symbol |_Limits | Units | | | | | [Method | Conditions | [ Min | Max | | | | | | | Subgroup 3 - Continued | | | | | | | | | | | | Forward voltage | 4011 |Iy = 9.0 ACpk); duty cycle = 2% | Veo | | | | (pulsed); tp = 8.3 ms | | | | 1N5S550, 1NSSSOUS | | | } 1.2 [vCpk) | 1N5551,1NSSS1US | | | | | 1.2 }v(pk) | 4N5552,1NS552US | | | | | 4.2 |V(pk) | 1N5553,1N5553US | | | | 1.3 [Vpk) } 1N5554,1N5554uUS | | | | 4.3 [VCpk) | | | | | | [Low temperature | Ty = 755C { | | | | operation: | | | | | | | | | |Forward voltage 4011 {Ig = 9.0 ACpk); duty cycle = 2% | Vez | | 1.5 |Cpk? | | (pulsed); t= 8.3 ms | | | | | | | | | | |Forward voltage 4011 {Ip = 1.5 Ade | Ve {0.5 | 1.2 {Vv de | | | | | | |Breakdown voltage 4021 | | Ver2 | | j | (diodes) | | i | | | | | | | | | | 1N5550,1N5550US | [Ip = 50 WA de | | 200 | |v de | 1N5551,1N5551US ilp = 50 WA de | | 400 | | de [| 1N5552,1N5552US {Ip = 50 A de | | 600 | |v de | 1N5553,1N5553US |Ip = 50 pA de | | 800 | |V de | 1N5554,1N5554us [Ip = 50 WA de | 1,000 | |V de | | | | | | | Subgroup 4 | | | | | | | | | | |Reverse recovery time 4.31. [Condition B-1 | top | | 2.0 |ps | | | | | | | | | | | | | | | | | | | j i | | | Not applicable | | | | | | | V For sampling plan, see MIL~S-19500. @@ O0001e5 0035455 Obb mM 13MIL-S-19500/420D TABLE II. Groups A, B, and C electrical measurements. 1/ 2/ | | | i | | | | | | MIL-STD-750 | | Limits I | |Step | Inspection | { Symbol | | Units | | [ | { | | | | | | | |Method | Conditions | { Min | Max | | | i I { | | | i | | i | | | i | | | 1 [Reverse current } 4016 |DC method | Alp, 3/ | | #100% of initial value| | | leaking change | | | | | or 250 nA de which- | | i | | | | |__ever_is greater. { | | | | | | | | | 2 |Forward voltage change | 4011 [I, = 1.5 A dc; | Ave, 3/ | | 250 mV de maximum | | | | |Pulsed (see 4.5.1) | | | change from previous | | | | | | | | { | | | | L L | measured vaule. 1/ The electrical measurements for a. Subgroup 3, see table IL b. Subgroup 4, see table II c. Subgroup 5, see table II 2/ The electrical measurements for a. Subgroup 3, see table II b. Subgroup 6, see table II 3/ Devices which exceed the group A Mm 0000125 0035459 TTel table [Va (JANS) of MIL-S~19500 are as follows: herein, step 2. herein, step 2. herein, steps 1 and 2. table IVb (JANTX and JANTXV) of MIL-5-19500 are as follows: herein, step 1. herein, step 1. Limits for this test shall not be accepted. 14MIL-S-19500/420D TABLE [I1I. Group inspection (all quality levels) for qualification only. Barometric pressure, reduced (altitude operation) 1001 |Pressure (see 1.3); t = 1 min. }DC method, V, = V (see 1.3) Jip, = 1.0 ua*de next mum | | | | | Inspection | MIL-STD-750 } Sampling | | | { plan | [Method | Conditions i | | | | | Subgroup 1 | | | 22 devices | | | | #0 {Temperature cycling | 1051 [500 cycles, Condition | | | {Electrical measurement 1/ | |See table I, group A, subgroup 2 | | | | | | Subgroup 2 | | | 22 devices | | | | =O | Steady-state dc {| 1038 {1,000 hours, condition A | blocking life | VR = Voum | jElectrical measurement 1/ | {See table I, group A, subgroup 2 | | | | | | Subgroup 3 | | | | | | | {Not applicable | | | | | | | | Subgroup 4 | | | 22 devices | | | [| =0 |Thermal resistance { 3101 |See 4.5.5; 8 Ju 22C/W a | | or [Rojee = 11C7h | | | 4081 | | | | | | | Junction temperature | |See figures 6, 7, and 8; | rise (see 4.5.4) | {AT, = 120C; L = .375 inch; | | IT, = 55C; Ipg= 5 Ade 2/ | | | | | | Subgroup 5 | | | 22 devices | | | | 0 | | | | | | | | | | I i 1/ Zayx not applicable. 2/ For surface mount device, I, = 5 A de and Te, (end cap temperature = 75C. 15 Mm o0001eS 0035440 714MIL-S-19500/4200 Ip 1200 12 1000 10 800 8 Vp tev) Tp (Al 600 6 If Ve 400 4 Ug) 200 2 F3 0 0 [~_______ 2 as/div ____+| NOTE: Blocking diode shall have a forward current rating = 6 A dc. FIGURE 6. Junction temperature rise test circuit. Ir 1200 12 1000 10 800 8 Ve tavi Tp (al 600 6 400 4 (I) 200 2 0 Q a 2 as/div | FIGURE 7. Junction temperature test oxcillogram (typical). 600 500 400 Ve (av) 300 200 100 be Q.5 as/div FIGURE 8. Expanded oscillogram of Ve- 16 mm 0000125 00354b1 450 @MIL-S-19500/420D R L fYY 2N4200 aL PULSE A 3900 v= Cc GEN our ra | 20'1 FERRITE ONE TURN PICK UP LOOP NOTES: 1. L = 131 H22 on 1 inch diameter form (air core). 2. C= 1 to 10 WF to give 20 Us pulse width. 3. V = Adjustable to 200 volts for power desired in device under test. ~o| 20ms be TYPICAL WAVEFORMS FIGURE 9. Typical peak reverse power measurement circuit and waveforms. Mm 0000125 0035462 S41? aMIL-S~19500/4200 MAXIMUM POWER DISSIPATION IN WATTS 0 25 50 75 100 125 150 175 Maximum Lead temperature in C (T,) at point "L" from body (for maximum operating junction temperature of +#175C with equal two-lead conditions). | | | | | Feat | | Inches mm C/W | |_.000 | [on | | .250 6.35 | 16.5 | 375 | 9.53 22 | 500 12.70 | 26 | | 750 | 19.05 | 35.5 | NOTES: 1. Otmensions are in inches. 2. Metric equivalents are given for general information only. FIGURE 10. Maximum power in watts vs lead temperature. 18 mM 0000125 00354b3 4e3MIL~S-19500/420D ( TH s Le ie LEAD THERMGL PATH LENGTH, L (AMPS) AVERAGE RECTIFIER CURRENT IN 0 35 35 75 95 115 135 155 175 LEAD TEMPERATURE Ty (C) NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information onty. FIGURE 11. Maximum current vs lead temperature. 19 Me 0000125 0035444 SLTMIL-S-19500/4200 4.5.6 Peak reverse power test. This test shall be measured in the circuit on figure 7 or equivalent. A 20 microsecond half-sine wave of current shall be used and peak reverse power shall be determined by the product of peak reverse voltage and peak reverse current. 5. PACKAGING 5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-S-19500. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Notes. 6.2 Acquisition requirements. a. Issue of DODISS to be cited in the solicitation. b. Lead finish (see 3.3.1). c. Product assurance level, type designator, and for die acquisition, the JANHC and JANKC identification (see figures 3, 4, and 5 and see 6.5). 6.3 Supersession information. users' Part or Identifying Number (PIN). are suitable as a substitute for the military PIN. 6.4 Applications data. 6.5 Suppliers of die. Device current ca The qualified die su JANHCAIN5550) will be identified on the QPL. The notes specified in MIL-S-19500 are applicable to this specification. Acquisition documents should specify the following: JANC ordering information | | | | | | Manufacturer | | PIN | 14552 | 60211 I 13409 { | | | | | | 1N5550 | JANHCA1NSS50 | JANHCBINSS50O. | JANHCCINSSSO | | | | JANKCA1N5550 | | | | 1N5551 | JANHCA1N5S551 | JANHCB1N5551 | JANHCCINSS51 | | | JANKCA1N5551 | | | | 1N5552 | JANHCAINS552 | JANHCBINSS52 | JANHCCINSSS2 =| | ] JANKCA1N5552 | | | | 1N5553 | JANHCA1N5553 | JANHCBINSS53 | JANHCCINSS53 | | | JANKCA1NSSS3 | | | | 1N5S54 | JANHCA1NS554 | JANHCBINSS54 =| JANHCCINSSS4 | | | _JANKCAINSS5S4 | I | 6.6 Changes from previous issue. with respect to the previous issue due to the extensiveness of the Me 0000105 OO35465 eth mm 20 Marginal notations are not us Devices covered by this specification supersede the manufacturers' and This information in no way implies that the manufacturers' PIN's pability with lead-dissipators or body forced-air- cooling, may be determined from figure 11, which shows maximum average rectified current versus Lead temperature as a function of the distance L from the diode bedy at which lead temperature is measured. See figure 10 for maximum power in watts as a function of lead temperature at a distance "L" from the diode body. ppliers with the applicable letter version Cexample ed in this revision to identify changes changes.Custodians: Army - ER Navy - EC Air Force - 17 NASA - NA Review activities: Army - AR, MI, SM Navy - AS, CG, MC MIL-S-19500/420D CONCLUDING MATERIAL Preparing activity: NASA - NA Agent: DLA - ES (Project 5961-1464) Air Force - 19, 80, 85, 99 DLA - ES 21 M 0000125 O0354bb 132