CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright © Harris Corporation 1995 1
SEMICONDUCTOR
HS-2510RH
Radiation Hardened
High Slew Rate Operational Amplifiers
Description
The HS-2510RH is a radiation hardened high performance
operational amplifier which set the standard for maximum
slew rate and wide bandwidth operation in moderately
powered, internally compensated, monolithic devices. In
addition to excellent dynamic characteristics, this
dielectrically isolated amplifier also offers low offset current
and high input impedance.
The ±50V/ms minimum slew rate and fast settling time of the
HS-2510RH are ideally suited for high speed D/A, A/D, and
pulse amplification designs. The HS-2510RH superior
bandwidth and 750kHz minimum full power bandwidth are
extremely useful in RF and video applications. To insure
compliance with slew rate and transient response
specifications, all devices are 100% tested for AC
performance characteristics over full temperature limits. To
improve signal conditioning accuracy, the HS-2510RH
provides a maximum offset current of 25nA and a minimum
input impedance of 50MΩ, both at +25oC, as well as offset
voltage trim capability.
Features
• High Slew Rate 50V/µs (Min), 65V/µs (Typ)
• Wide Power Bandwidth 750kHz (Min)
• Low Offset Current 25nA (Min), 10nA (Typ)
• High Input Impedance 50MΩ (Min), 100MΩ (Typ)
• Wide Small Signal Bandwidth 12MHz (Typ)
• Fast Settling Time (0.1% of 10V Step) 250ns (Typ)
• Low Quiescent Supply Current 6mA (Max)
• Internally Compensated For Unity Gain Stability
• Total Gamma Dose 10K RAD (Si)
Applications
• Data Acquisition Systems
• RF Amplifiers
• Video Amplifiers
• Signal Generators
• Pulse Amplification
Ordering Information
PART
NUMBER TEMPERATURE
RANGE PACKAGE TYPE
HS7-2510RH -55oC to +125oC 8 Lead CerDIP
HS9-2510RH -55oC to +125oC 14 Lead Ceramic Flatpack
Spec Number 518809
File Number 3592.1
August 1995
Pinouts
8 LEAD CERAMIC DUAL-IN-LINE
FRIT SEAL PACKAGE (CERDIP)
MIL-STD-1835, GDIP1-T8
TOP VIEW
14 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835, CDFP3-F14
TOP VIEW
BAL
IN-
IN+
V-
1
2
3
4
8
7
6
5
COMP
V+
OUT
BAL
+
-
NC
COMP
BAL
IN-
IN+
NC
NC
NC
V+
OUT
BAL
V-
NC
NC
1
2
3
4
5
6
7
14
13
12
11
10
9
8
+
-
2
Specifications HS-2510RH
Absolute Maximum Ratings Thermal Information
Voltage Between V+ and V- Terminals. . . . . . . . . . . . . . . . . . . . 40V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to V-
Peak Output Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .50mA
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
Storage Temperature Range . . . . . . . . . . . . . . . . . -65oC to +150oC
ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +275oC
Thermal Resistance θJA θJC
CerDIP Package . . . . . . . . . . . . . . . . . . . 120oC/W 30oC/W
Ceramic Flatpack Package . . . . . . . . . . . 125oC/W 35oC/W
Max Package Power Dissipation Limit at +125oC Ambient
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.42W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . .0.40W
If Device Power Exceeds Package Dissipation Capability, Provide
Heat Sinking or Derate Linearly at the Following Rate
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8.3mW/oC
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . .8.0mW/oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Recommended Operating Conditions
Operating Temperature Range. . . . . . . . . . . . . . . . -55oC to +125oC
Operating Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±15V VINcm ≤ 1/2 (V+ - V-)
RL ≥ 2kΩ
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: VSUPPLY = ±15V, RSOURCE = 100Ω, RLOAD = 500kΩ, VOUT = 0V, Unless Otherwise Specified
PARAMETERS SYMBOL CONDITIONS TEMPERATURE
LIMITS
UNITSMIN MAX
Input Offset Voltage VIO VCM = 0V +25oC-88mV
+125oC, -55oC -10 10 mV
Input Bias Current +IB VCM = 0V, +RS = 100kΩ
-RS = 100Ω+25oC -200 200 nA
+125oC, -55oC -400 400 nA
-IB VCM = 0V, +RS = 100Ω
-RS = 100kΩ+25oC -200 200 nA
+125oC, -55oC -400 400 nA
Input Offset Current IIO VCM = 0V, +RS = 100kΩ
-RS = 100kΩ+25oC -25 25 nA
+125oC, -55oC -50 50 nA
Common Mode Range +CMR V+ = 5V
V- = -25V +25oC +10 - V
+125oC, -55oC +10 - V
-CMR V+ = 25V
V- = -5V +25oC - -10 V
+125oC, -55oC - -10 V
Large Signal Voltage Gain +AVOL VOUT = 0V and +10V
RL = 2kΩ+25oC 10 - kV/V
+125oC, -55oC 7.5 - kV/V
-AVOL VOUT = 0V and -10V
RL = 2kΩ+25oC 10 - kV/V
+125oC, -55oC 7.5 - kV/V
Common Mode Rejection Ratio +CMRR ∆VCM = +10V, +V = +5V
-V = -25V, VOUT = -10V +25oC80-dB
+125oC, -55oC80-dB
-CMRR ∆VCM = -10V, +V = +25V
-V = -5V, VOUT = +10V +25oC80-dB
+125oC, -55oC80-dB
Output Voltage Swing +VOUT RL = 2kΩ+25oC10-V
+125oC, -55oC10-V
-VOUT RL = 2kΩ+25oC - -10 V
+125oC, -55oC - -10 V
Spec Number 518809
3
Specifications HS-2510RH
Output Current +IOUT VOUT = -10V +25oC10-mA
+125oC, -55oC 7.5 - mA
-IOUT VOUT = +10V +25oC - -10 mA
+125oC, -55oC - -7.5 mA
Quiescent Power Supply
Current +ICC IOUT = 0mA +25oC-6mA
+125oC, -55oC - 6.5 mA
-ICC IOUT = 0mA +25oC-6-mA
+125oC, -55oC -6.5 - mA
Power Supply Rejection Ratio +PSRR ∆VSUP = 10V
+V = +20V, -V = -15V
+V = +10V, -V = -15V
+25oC80-dB
+125oC, -55oC80-dB
-PSSR ∆VSUP = 10V
+V = +15V, -V = -20V
+V = +15V, -V = -10V
+25oC80-dB
+125oC, -55oC80-dB
Offset Voltage Adjustment +V10Adj Note 1 +25oC V10-1 - mV
+125oC, -55oC V10-1 - mV
-V10Adj Note 1 +25oC V10+1 - mV
+125oC, -55oC V10+1 - mV
NOTE:
1. Offset adjustment range is (VIO (measured, ±1mV) minimum referred to output this test is for functionality only to assure adjustment
through 0V.
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: VSUPPLY = ±15V, RSOURCE = 1KΩ, RLOAD = 2kΩ, CLOAD = 50pF, AVCL = +1V/V, Unless Otherwise Specified
PARAMETERS SYMBOL CONDITIONS TEMPERATURE
LIMITS
UNITMIN MAX
Slew Rate +SR VOUT = -5V to +5V +25oC50-V/µs
+125oC, -55oC45-V/µs
-SR VOUT = +5V to -5V +25oC50-V/µs
+125oC, -55oC45-V/µs
Rise and Fall Time TR VOUT = 0 to +200mV
10% ≤TR ≤90% +25oC - 50 ns
+125oC, -55oC - 60 ns
TF VOUT = 0 to -200mV
10% ≤TR ≤90% +25oC - 50 ns
+125oC, -55oC - 60 ns
Overshoot +OS VOUT = 0 to +200mV +25oC - 40 %
+125oC, -55oC - 50 %
-OS VOUT = 0 to -200mV +25oC - 40 %
+125oC, -55oC - 50 %
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Tested at: VSUPPLY = ±15V, RSOURCE = 100Ω, RLOAD = 500kΩ, VOUT = 0V, Unless Otherwise Specified
PARAMETERS SYMBOL CONDITIONS TEMPERATURE
LIMITS
UNITSMIN MAX
Spec Number 518809
4
Specifications HS-2510RH
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Characterized at: VSUPPLY = ±15V, RLOAD = 2kΩ, CLOAD = 50pF, Unless Otherwise Specified
PARAMETERS SYMBOL CONDITIONS NOTES TEMPERATURE
LIMITS
UNITSMIN MAX
Differential Input
Resistance RIN VCM = 0V 1 +25oC50-MΩ
Full Power Bandwidth FPBW VPEAK = 10V 1, 2 +25oC 750 - kHz
Minimum Closed Loop
Stable Gain CLSG 1 -55oC to +125oC 1 - V/V
Quiescent Power
Consumption PC VOUT = 0V, IOUT = 0mA 1, 3 -55oC to +125oC - 195 mW
NOTES:
1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These
parameters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by
characterization based upon data from multiple production runs which reflect lot to lot and within lot variation.
2. Full power bandwidth guarantee based on slew rate measurement using FPBW = Slew Rate/(2πVPEAK).
3. Quiescent power consumption based upon quiescent supply current last maximum. (No load on outputs.)
TABLE 4. POST 10K RAD(SI) ELECTRICAL CHARACTERISTICS
Device Tested at: VSUPPLY = ±15V, RSOURCE = 100Ω, RLOAD = 500kΩ, VOUT = 0V, Unless Otherwise Specified
PARAMETERS SYMBOL CONDITIONS TEMPERATURE
LIMITS
UNITSMIN MAX
Input Offset Voltage VIO VCM = 0V +25oC -10 10 mV
Input Bias Current +IB VCM = 0V, +RS = 100kΩ
-RS = 100Ω+25oC -600 600 nA
-IB VCM = 0V, +RS = 100Ω
-RS = 100kΩ+25oC -600 600 nA
Input Offset Current IIO VCM = 0V, +RS = 100kΩ
-RS = 100kΩ+25oC -50 50 nA
Common Mode Range +CMR V+ = +5V
V- = -25V +25oC +10 - V
-CMR V+ = +25V
V- = -5V +25oC - -10 V
Large Signal Voltage Gain +AVOL VOUT = 0V and +10V
RL = 2kΩ+25oC 5 - kV/V
-AVOL VOUT = 0V and -10V
RL = 2kΩ+25oC 5 - kV/V
Common Mode Rejection Ratio +CMRR ∆VCM = +10V, +V = +5V
-V = -25V, VOUT = -10V +25oC80-dB
-CMRR ∆VCM = -10V, +V = +25V
-V = -5V, VOUT = +10V +25oC80-dB
Output Voltage Swing +VOUT RL = 2kΩ+25oC10-V
-VOUT RL = 2kΩ+25oC - -10 V
Output Current +IOUT VOUT = -10V +25oC 7.5 - mA
-IOUT VOUT = +10V +25oC - -7.5 mA
Quiescent Power Supply Current +ICC VOUT = 0mA +25oC - 6.5 mA
-ICC VOUT = 0mA +25oC -6.5 - mA
Spec Number 518809
5
Specifications HS-2510RH
Power Supply Rejection Ratio +PSRR ∆VSUP = 10V
+V = +20V, -V = -15V
+V = +10V, -V = -15V
+25oC75-dB
-PSRR ∆VSUP = 10V
+V = +15V, -V = -20V
+V = +15V, -V = -10V
+25oC75-dB
Offset Voltage Adjustment +VIOAdj Note 1 +25oC VIO-1 - mV
-VIOAdj Note 1 +25oC VIO+1 - mV
Slew Rate +SR VOUT = -5V to +5V +25oC45-V/µs
-SR VOUT = +5V to -5V (Note 2) +25oC45-V/µs
Rise and Fall Time TR VOUT = 0 to +200mV
10% ≤TR ≤90% (Note 2) +25oC - 60 ns
TF VOUT = 0 to -200mV
10% ≤TR ≤90% (Note 2) +25oC - 60 ns
Overshoot +OS VOUT = 0 to +200mV (Note 2) +25oC - 50 %
-OS VOUT = 0 to -200mV (Note 2) +25oC - 50 %
NOTES:
1. Offset adjustment range is (VIO (measured, ±1mV) minimum referred to output this test is for functionality only to assure adjustment
through 0V.
2. RLOAD = 2kΩ, CLOAD = 50pF, RSOURCE = 1kΩ, AVCL = +1V/V.
TABLE 5. POST BURN-IN DELTA PARAMETERS (TA = 25oC)
Device Tested at: VSUPPLY = ±15V, RSOURCE = 100Ω, RLOAD = 500kΩ, VOUT = 0V
PARAMETERS DELTA LIMITS
VIO ±2.0mV
+IB, -IB ±50nA
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE
GROUP MIL-STD-883
METHOD
GROUP A SUBGROUPS
TESTED FOR -Q RECORDED FOR -Q
Initial Test 100% 5004 1, 9 1 (Note 1)
Interim Test 100% 5004 1, 9, ∆1, ∆(Note 1)
PDA 100% 5004 1, ∆
Final Test 100% 5004 2, 3, 10, 11
Group A (Note 2) Sample 5005 1, 2, 3, 9, 10, 11
Subgroup B5 Sample 5005 1, 2, 3, 9, 10, 11, ∆1, 2, 3, ∆(Note 1)
Subgroup B6 Sample 5005 1, 9
Group D Sample 5005 1, 9
Group E, Subgroup 2 Sample 5005 1, 9
NOTE:
1. Table 5 parameters only.
2. Alternate Group A testing may be exercised in accordance with MIL-STD-883, Method 5005.
TABLE 4. POST 10K RAD(SI) ELECTRICAL CHARACTERISTICS (Continued)
Device Tested at: VSUPPLY = ±15V, RSOURCE = 100Ω, RLOAD = 500kΩ, VOUT = 0V, Unless Otherwise Specified
PARAMETERS SYMBOL CONDITIONS TEMPERATURE
LIMITS
UNITSMIN MAX
Spec Number 518809
6
HS-2510RH
Harris Space Level Product Flow -Q
Wafer Lot Acceptance (All Lots) Method 5007
(Includes SEM) (Note 1)
GAMMA Radiation Verification (Each Wafer) Method 1019,
4 Samples/Wafer, 0 Rejects
100% Die Attach
100% Nondestructive Bond Pull, Method 2023
Sample - Wire Bond Pull Monitor, Method 2011
Sample - Die Shear Monitor, Method 2019 or 2027
100% Internal Visual Inspection, Method 2010, Condition A
CSI and/or GSI PreCap (Note 7)
100% Temperature Cycle, Method 1010, Condition C,
10 Cycles
100% Constant Acceleration, Method 2001, Condition per
Method 5004
100% PIND, Method 2020, Condition A
100% External Visual
100% Serialization
100% Initial Electrical Test (T0)
100% Static Burn-In, Condition A or B, 240 Hours, +125oC
or Equivalent, Method 1015
100% Interim Electrical Test (T1)
100% Delta Calculation (T0-T1)
100% PDA, Method 5004 (Note 2)
100% Final Electrical Test
100% Fine/Gross Leak, Method 1014
100% Radiographic (X-Ray), Method 2012 (Note 3)
100% External Visual, Method 2009
Sample - Group A, Method 5005 (Note 4)
Sample - Group B, Method 5005 (Note 5)
Sample - Group D, Method 5005 (Notes 5, 6)
100% Data Package Generation (Note 8)
CSI and/or GSI Final (Note 7)
NOTES:
1. Modified SEM Inspection, not compliant to MIL-STD-883, Method 2018. This device does not meet the Class S minimum metal step cov-
erage of 50%. The metal does meet the current density requirement of <2 E5 A/cm2. Data provided upon request.
2. Failures from subgroup 1 and deltas are used for calculating PDA. The maximum allowable PDA = 5%.
3. Radiographic (X-Ray) inspection may be performed at any point after serialization as allowed by Method 5004.
4. Alternate Group A testing may be performed as allowed by MIL-STD-883, Method 5005.
5. Group B and D inspections are optional and will not be performed unless required by the P.O. When required, the P.O. should include
separate line items for Group B test, Group B samples, Group D test and Group D samples.
6. Group D Generic Data, as defined by MIL-I-38535, is optional and will not be supplied unless required by the P.O. When required, the
P.O. should include a separate line item for Group D generic data. Generic data is not guaranteed to be available and is therefore not
available in all cases.
7. CSI and/or GSI inspections are optional and will not be performed unless required by the P.O. When required, the P.O. should include
separate line items for CSI PreCap inspection, CSI Final Inspection, GSI PreCap inspection, and/or GSI Final Inspection.
8. Data Package Contents:
Cover Sheet (Harris Name and/or Logo, P.O. Number, Customer Part Number , Lot Date Code, Harris Part Number, Lot Number , Quantity).
W afer Lot Acceptance Report (Method 5007). Includes reproductions of SEM photos with percent of step coverage.
GAMMA Radiation Report. Contains Cover page, disposition, RAD Dose, Lot Number, Test Package used, Specification Numbers, Test
equipment, etc. Radiation Read and Record data on file at Harris.
X-Ray report and film. Includes penetrometer measurements.
Screening, Electrical, and Group A attributes (Screening attributes begin after package seal).
Lot Serial Number Sheet (Good units serial number and lot number).
Variables Data (All Delta operations). Data is identified by serial number. Data header includes lot number and date of test. (See Table 6.)
Group B and D attributes and/or Generic data is included when required by the P.O.
The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed
by an authorized Quality Representative.
Spec Number 518809
7
HS-2510RH
Test Circuit
(Applies to Tables 1, 2, 4, 5)
FIGURE 1. SIMPLIFIED TEST CIRCUIT (Applies to Table 2)
Test Circuit and Waveforms
FIGURE 2. SIMPLIFIED TEST CIRCUIT (Applies to Table 2)
FIGURE 3. SLEW RATE WAVEFORM FIGURE 4. TRANSIENT RESPONSE WAVEFORM
+
-+
-
S5A
2
1
VAC
100
100
+VCC
S5B
2
1
+
123
S8
2K 10K
-VEE
OPEN S9
12
1K
50pF (Note 1)
ACOUT
1
V2
EOUT
S4
2
1
5K
50K
1
100K
S1 50K
V1
S2 S6
1
2
DUT
S3B
2
OPEN
110.1
2
3OPEN
1
S7
BAL
ADJ
500K
BUFFER
FOR LOOP STABILITY,
USE MIN VALUE CAPACITOR
TO PREVENT OSCILLATION
OPEN 2
OPEN 2
100K
S3A
1
0.1
1 OPEN
2
OPEN
2K
-1/10
ALL RESISTORS = ±1% (Ω)
ALL CAPACITORS = ±10% (µF)
NOTE:
1. Includes stray capacitances.
-1
x2
-
+15V
INPUT
1K
OUTPUT
2K
-15V
50pF
+
-
+5V
INPUT
-5V
90%
OUTPUT 10%
SLEW
RATE
= ∆V/∆T
∆T
-5V
+5V
∆V
NOTE: Measured on both positive and negative transitions.
Capacitance at Compensation pin should be minimized.
+200mV
INPUT
0V OVERSHOOT
90%
OUTPUT10%
RISE TIME
-200mV
0V
NOTE: Measured on both positive and negative transitions.
Capacitance at Compensation pin should be minimized.
Spec Number 518809
8
HS-2510RH
Typical Performance Curves
Unless Otherwise Specified: TA = +25oC, VSUPPLY = ±15V
FIGURE 5. INPUT BIAS AND OFFSET CURRENT vs
TEMPERATURE FIGURE 6. OPEN LOOP VOLTAGE GAIN vs TEMPERATURE
FIGURE 7. EQUIVALENT INPUT NOISE vs BANDWIDTH FIGURE 8. NORMALIZED AC PARAMETERS vs SUPPLY
VOLTAGE AT +25oC
FIGURE 9. NORMALIZED AC PARAMETERS vs
TEMPERATURE FIGURE 10. OUTPUT VOLTAGE SWING vs FREQUENCY
AT +25oC
BIAS CURRENT
OFFSET CURRENT
100
80
60
40
20
0
-20 -50 -25 0 25 50 75 100 125
CURRENT (nA)
TEMPERATURE (oC)
VS = ±20V
VS = ±15
VS = ±10
90
85
80
75 -50
-55 -25 0 25 50 75 100 125
TEMPERATURE (oC)
GAIN (dB)
10K SOURCE RESISTANCE
0 SOURCE RESISTANCE
THERMAL NOISE OF 10K RESISTOR
100
10
1.0
0.1
100Hz 1kHz 10kHz 100kHz 1MHz
UPPER 3dB FREQUENCY LOWER 3dB FREQUENCY (10Hz)
EQUIVALENT INPUT NOISE (µV)
SLEW RATE
BANDWIDTH
BANDWIDTH
SLEW RATE
1.1
1.0
0.9
0.8
±10V ±15V
NORMALIZED PARAMETERS
REFERRED TO VALUES AT ±15V
SUPPLY VOLTAGE
±20V
SLEW RATE
BANDWIDTH
BANDWIDTH
SLEW RATE
1.1
1.0
0.9
0.8 -50
-55 -25 0 25 50 75 100 125
TEMPERATURE (oC)
NORMALIZED PARAMETERS
REFERRED TO VALUES AT ±25οC
VS = ±15
VS = ±10
VS = ±20
35
30
25
20
15
10
5
010K 100K 1MEG 10MEG
FREQUENCY (Hz)
PEAK-TO-PEAK VOLTAGE SWING
Spec Number 518809
9
HS-2510RH
FIGURE 11. OPEN LOOP FREQUENCY RESPONSE FOR
VARIOUS VALUES OF CAPACITORS FROM
COMPENSATION PIN TO GROUND
FIGURE 12. POWER SUPPLY CURRENT vs TEMPERATURE
FIGURE 13. OPEN LOOP GAIN AND PHASE RESPONSE vs
FREQUENCY FIGURE 14. SUGGESTED VOS ADJUSTMENT
FIGURE 15. INPUT NOISE DENSITY vs FREQUENCY
Typical Performance Curves
Unless Otherwise Specified: TA = +25oC, VSUPPLY = ±15V (Continued)
FREQUENCY (Hz)
10 100 1K 10K 100K 1M 10M 100M
0pF
100pF
1000pF
30pF
300pF
120
100
80
60
40
20
0
-20
OPEN-LOOP VOLTAGE GAIN (dB)
NOTE: External compensation components are not required for
stability, but may be added to reduce bandwidth, if desired.
4.4
4.2
4.0
3.8
3.6
3.4
3.2 -50
-55 -25 0 25 50 75 100 125
TEMPERATURE (oC)
CURRENT (mA)
VS = ±10VS = ±15VS = ±20
GAIN
PHASE
FREQUENCY (Hz)
OPEN LOOP VOLTAGE GAIN (dB)
120
100
80
60
40
20
0
-2010 100 1K 10K 100K 1M 10M 100M
30o
60o
90o
120o
150o
180o
PHASE ANGLE
OUTIN BAL
V-
V+
RT 20kΩ
TESTED OFFSET ADJUSTMENT IS |VOS + 1mV|
MINIMUM REFERRED TO OUTPUT
TYPICAL RANGE IS ±8mV FOR RT = 20kΩ
1000
100
10
11 10 100 1K 10K 100K
FREQUENCY (Hz)
INPUT NOISE VOLTAGE (nV/√Hz)
INPUT NOISE CURRENT (pA/√Hz)
100
10
1
0.1
INPUT NOISE CURRENT
INPUT NOISE VOLTAGE
Spec Number 518809
10
HS-2510RH
Irradiation Circuit
HS7-2510RH
NOTES:
1. V1 = +15V ±10%
2. V2 = -15V ±10%
3. R = 1MΩ±5%
4. C = 0.1µF±10%
1
2
3
4
8
7
6
5
C
V1
R
V2
C
C
Spec Number 518809
Burn-In Circuits
HS7-2510RH CerDIP
NOTES:
1. R1 = 1MΩ,±5%, 1/4W (Min)
2. C1 = C2 = 0.01µF/Socket (Min) or 0.1µF/Row (Min)
3. C3 = 0.01µF/Socket (10%)
4. D1 = D2 = 1N4002 or Equivalent (Per Board)
5. |(V+) - (V-)| = 30V
HS9-2510RH CERAMIC FLATPACK
NOTES:
1. R1 = 1MΩ,±5%, 1/4W (Min)
2. C1 = C2 = 0.01µF/Socket (Min) or 0.1µF/Row (Min)
3. C3 = 0.01µF/Socket (±10%)
4. D1 = D2 = 1N4002 or Equivalent (Per Board)
5. |(V+) - (V-)| = 31V ±1V
1
2
3
4
8
7
6
5
+
C3 C1
V+
D1
R1
C2D2
V-
1
2
3
4
5
6
7
14
13
12
11
10
9
8
R1
C3 C1
V+
D1
C2 D2V-
Spec Number 518809
11
Schematic Diagram
OFFSET
Q37
Q28R26
Q32
Q35
Q4
Q2
Q34
Q33
Q24 Q23 Q22
Q19
Q13
Q25
Q20
V-
INPUT-
R2
2K
Q1
Q27
Q18
Q21
R15
740
R16
1.48K
R17
1.48K
R18
1.48K
Q3
COMP
Q6 Q8
Q7 Q9
Q40
Q39
Q38 1.68K
R25
Q29 Q26
Q30
Q31
Q36
R4
11.13K
R22
240
R14
30
Q12 Q15 Q17
R10
1.8K
R7
1.8K
200
R9
200
R6
Q16
V+
R12
1.1K
OUTPUT
Q14
Q11
R13
30
C1
10pF
Q10
R11
2K
R1
4K
200
R5 200
R8
INPUT+
R3
960
Q5
R19
6.3K
1.68K
R20
3K
R23
3K
2.7pF
C2
OFFSET
HS-2510RH
Spec Number 518809
12
HS-2510RH
Metallization Mask Layout
HS-2510RH
V+ OUT BAL
V-
+IN-INBAL
COMP
Metallization Topology
DIE DIMENSIONS:
65 mils x 57 mils x 19 mils
(1660µm x 1950µm x 483µm)
METALLIZATION:
Type: Aluminum
Thickness: 16kű2kÅ
GLASSIVATION:
Type: Nitride
Thickness: 7kű0.7kÅ
TRANSISTOR COUNT:
40
WORST CASE CURRENT DENSITY:
<2 x 105A/cm2
SUBSTRATE POTENTIAL (Powered Up):
Unbiased
DIE ATTACH:
Temperature: CerDIP 460oC (Max)
Spec Number 518809
