LESHAN RADIO COMPANY, LTD.
M36–1/3
General Purpose Transistors
NPN Silicon
1
3
2
BC847BRLT1
is LRC prefered Device
CASE 318–07, STYLE 6
SOT– 23 (TO–236AB)
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter V oltage V CEO 50 V
Collector–Base V oltage V CBO 60 V
Emitter–Base V oltage V EBO 7.0 V
Collector Current — Continuous I C150 mAdc
Collector power dissipation P C0.2 W
Junction temperature T j150 °C
Storage temperature T stg -55
~
+150 °C
DEVICE MARKING
BC847BRLT1 =G1F
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
Collector–Emitter Breakdown Voltage V (BR)CEO 50 — — V
(IC = 1 mA)
Emitter–Base Breakdown V oltage V (BR)EBO 7——V
(IE = 50 µA)
Collector–Base Breakdown V oltage V (BR)CBO 60 — — V
(IC = 50 µA)
Collector Cutoff Current I CBO — — 0.1 µA
(VCB = 60 V)
Emitter cutoff current I EBO — — 0.1 µA
(VEB = 7 V)
Collector-emitter saturation voltage V CE(sat) — — 0.4 V
(IC/ IB = 50 mA / 5m A)
DC current transfer ratio h FE 120 –– 560 ––
(V CE = 6 V, I C= 1mA)
T ransition frequency f T— 180 –– MHz
(V CE = 12 V, I E= – 2mA, f =30MHz )
Output capacitance C ob — 2.0 3.5 pF
(V CB = 12 V, I E= 0A, f =1MHz )
h FE values are classified as follows:
QRS
hFE 120~270 180~390 270~560
2
EMITTER
3
COLLECTOR
1
BASE
*
LESHAN RADIO COMPANY, LTD.
M36–2/3
BC847BRLT1
0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –1.6
T
A
= 100°C
25°C
– 55°C
50
20
10
50
2
1
0.5
0.2
0.1 0 0.4 0.8 1.2 1.6 2.0
T A = 25°C
100
80
60
40
20
0
I C, COLLECTOR CURRENT (mA)
Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics( )
Fig.3 Grounded emitter output characteristics( ) Fig.4 DC current gain vs. collector current ( )
Fig.5 DC current gain vs. collector current ( ) Fig.6 Collector-emitter saturation voltage vs.
collector current
VCE= 6 V
V BE , BASE TO EMITTER VOLTAGE(V)
I C, COLLECTOR CURRENT (mA)
V CE , COLLECT OR TO EMITTER VOLTAGE (V)
048121620
10
8
6
4
2
0
I C, COLLECTOR CURRENT (mA)
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
500
200
100
50
20
10
h FE, DC CURRENT GAIN
I C, COLLECTOR CURRENT (mA)
0.2 0.5 1 2 5 10 20 50 100 200
500
200
100
50
20
10
h FE, DC CURRENT GAIN
I C, COLLECTOR CURRENT (mA)
0.5
0.2
0.1
0.05
0.02
0.01
V CE(sat), COLLECTOR SATURATION VOLTAGE(V)
I C, COLLECTOR CURRENT (mA)
0.50mA
0.2 0.5 1 2 5 10 20 50 100 200 0.2 0.5 1 2 5 10 20 50 100 200
LESHAN RADIO COMPANY, LTD.
M36–3/3
Fig.8 Collector-emitter saturation voltage vs.
collector current ( )
V CE(sat), COLLECTOR SATURATION VOLTAGE(V)
I C, COLLECTOR CURRENT (mA)
0.2 0.5 1 2 5 10 20 50 100
BC847BRLT1
Fig.9 Gain bandwidth product vs. emitter current
500
200
100
50
f r , TRANSITION FREQUENCY(MHz)
I E, EMITTER CURRENT (mA)
–0.5 –1 –2 –5 –10 –20 –50 –100
Fig.10 Collector output capacitance vs.collector-base voltage
Emitter inputcapacitance vs. emitter-base voltage
20
10
5
2
1
C ob , COLLECT OR OUTPUT C APACITANCE( pF)
C ib , EMITTER INPUT CAPACITANCE (pF)
V CB, COLLECTOR TO BASE VOLTAGE (V)
V EB, EMITTER TO BASE VOLTAGE (V)
0.2 0.5 1 2 5 10 20 50
Fig.7 Collector-emitter saturation voltage vs.
collector current ( )
0.5
0.2
0.1
0.05
0.02
0.01
V CE(sat), COLLECTOR SATURATION VOLTAGE(V)
I C, COLLECTOR CURRENT (mA)
0.2 0.5 1 2 5 10 20 50 100 200
0.5
0.2
0.1
0.05
0.02
0.01
Fig.11 Base-collector time constant vs.emitter current
200
100
50
20
10
C c-r bb, BASE COLLECTOR TIME CONSTANT( ps)
I E, EMITTER CURRENT (mA)
–0.2 –0.5 –1 –2 –5 –10