303 DG180,181,182 SPST JSFET FFOD* 24 vo FCF aT) (23%) Siliconix Meat (Vt =15V, Vo = 15V, VL=5V, Vr=0, T,=25) 4 dBA (DG181) /... iia aad wo eR TF j >> J # te \ able ele ki) mlm el mK | =] Vg + =Vq MAXI. i be poy 4 Ips ima Vanaroc | SFR EH 75 45 75 15 Vv a aes mn ee t~ = 4 + }-=-4 | | { Ig=1mA, Vo=7.5V] T,=25C 18 | 30 Tps:on . _ ? oem 4 8 | 3 PF Vin =0.8 | Srasem | | | 6 | | 4 se Vin=2.0V | s=10V, Vp=~10V 0.06 | 1 5 ' V+ =10V, V-=20V ey pe wwe | ee T,=25C y,o-fav.vee7av) Poa) a) rs | = | | | Vp=7.8V, Vs=7. ' 0. i = sore [Ty a0, Vs et Ot nA asurens Viv=2.0V ie 100 : 100 Kt L | ne V+=10V, V-=20V : | | "DS{on) ~ ORAIN-SOURCE ON RESISTANCE (OHMS! | ea ces te SYP IS wee | Vp=7.5V, Vs=7.5V 100 | 100 | _ J = TEMPERATURE ("C) _ | Vs=10V, Vp= -10V | ' Vis=2.0V V' =10V, V- =20V T,=25C ff | R44 F> TM-Vo, BRERTE (0G181) t= ! | Vp=7.5V, Vs=7.5V 06 | 1 5 LpvorFi 2 / tT nA | 130 T J 100 i 1 100 | 320 ,.___| , Sire | Vo=T7.5V, Vs=7.5V 100 100 | 1g jj ____-~-+ Viv=0.8V T,=25C 2 |0.02 10 | 7 ald Fosiow ly ys=7.5V ete aE a 200 200 | na = 9 tert wats p= Vs=7.5 | yf F iit. LL z A ee In Vin=3V 10 10 : 1 go fob be eet vp 78 T= 25C BA - an i Tn, I Viy=0V 250 | 30 250 ie i= 1 | Viy=5V 20 eo = OrREm 50 w& * i | 85 180 -55 35 -15 5 2% 48 65 BS 105 125 on x . L T TEMPERATURE ("C} toy HUAEEUR IC LS | 95 130 150 ns Corr) [ yr Vs= 5V, Ip=0 9 9 an = | tocorr) MRS (DG1B1) Corn _|f=1MHz [ Vp~5V, Ig=0 6 6 |_| oF 1000, eres a == C, Vp= Vs=0V 14 14 zg [Suen BAAR ree. |__Yers >50 aB = fe asurrix OIR |R,=750, f=1MHz >50 7 x @ | #4 ia 06 | 15 06 | 15 3 Siliconix | DG181 -~5 | ~27 ~5 | -27 5 10 Vin=0V (ZAHN) mA 8 Intersil | DG181 iA 31 | 45 31 | 45 Z Te a 2 | -10 =2 | -10 moa _ ro 06 | 15 06 | 15 3 } 5 r [5 [-27[ | -s | -27 a Vin=5V (GAN) 7 mA rf 6 os Ss 15128 dy 3.1 4.5 3.1 . | T = TEMPERATURE {CC} s