S9684 series photo IC uses a dual-element Si PIN photodiode and compares the two signals to obtain a highly stable output even when laser
power or ambient temperature fluctuates. The current amplifier is available with two gain levels (6 times and 20 times) according to laser power to
be used. Hamamatsu also provides S9703 series photo IC that uses a single-element Si PIN photodiode.
Features
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Photo IC for precision printing
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High sensitivity
Current amplifier gain: 20 times (S9684)
6 times (S9684-01)
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Digital output
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Small package
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Suitable for lead-free solder reflow
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Active area (PD1: 2.5 × 0.3 mm, PD2: 2.5 × 0.5 mm)
Applications
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Print start timing detection for laser printers, digital copiers,
fax machines, etc.
PHOTO IC
Photo IC for laser beam synchronous detection
High-sensitivity and high-speed photo IC for high precision printing
S9684 series
1
■ Absolute maximum ratings (Ta=25 °C)
Parameter Symbol Value Unit
Supply voltage Vcc -0.5 to +7 V
Power dissipation *1 P 300 mW
Output voltage *2 Vo -0.5 to +7 V
Output current Io 5 mA
Ro1, Ro2 terminal current IRO 3 mA
Operating temperature Topr -25 to +80 °C
Storage temperature Tstg -40 to +85 °C
*1: Derate power dissipation at a rate of -4 mW/°C above Ta=25 °C
*2: Vcc=+0.5 V or less
■ Electrical and optical characteristics (Ta=25 °C, λ=780 nm, Vcc=5 V, Ro1=Ro2=5.1 kΩ, unless otherwise noted)
Parameter Symbol Condition Min. Typ. Max. Unit
Current consumption Icc No input - - 4 mA
High level output voltage VOH IOH=4 mA 4.6 - - V
Low level output voltage VOL I
OL=4 mA, *3 - - 0.3 V
S9684 7.5 10 12.5
Threshold input power S9684-01 PTH 26 35 44 µW
Propagation delay time variation ∆tP ∆PI= ±10 %, *4, *5 - - ±5 ns
Rise time tr - 4 7 ns
Fall time tf - 4 7 ns
Maximum input power PI Max. - - PTH × 8 µW
*3: PI=45 µW (S9684), PI=140 µW (S9684-01)
*4: Beam diameter (1/e2)=55 µm, scan speed=1.18 mm/µs
Not including jitter caused by polygon mirror non-uniformity, etc.
*5: PI=45 µW center (S9684), PI=140 µW center (S9684-01)
Photo IC for laser beam synchronous detection
S9684 series
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable . Howe ver, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2009 Hamamatsu Photonics K.K.
Cat. No. KPIC1056E05
Jun. 2009 DN
KPICA00
0.5
2.5
0.3
0.67 (CENTER OF
ACTIVE AREA)
3.2 ± 0.2
(INCLUDING BURR)
3.0 *1.0 ± 0.4 1.0 ± 0.4 0.05
2.4
MIRROR AREA
RANGE
0.15
2.8
2.9
3.0 *0.45 ± 0.3
3.0 *
3.4
MIRROR AREA
RANGE
3.8
3.9
4.0 *
4.0 *
4.2 ± 0.2
5.0 ± 0.3
0.45 ± 0.3
0.27
0.75
1.3
0.80.80.8
0.1 ± 0.1
0.8
(10 ×) 0.3
(10 ×) 0.4
0.8
PHOTOSENSITIVE
SURFACE Tolerance unless otherwise noted: ±0.1, ±2˚
Shaded area indicates burr.
Chip position accuracy with respect to the
package dimensions marked *
X, Y≤±0.2
Vcc
Ro1
OUT
GND
Ro2
GND
GND
GND
GND
GND
PHOTOSENSITIVE
SURFACE
2.5
0.5 0.3
PD2
DETAILS OF
PHOTODIODE
PD1
PD2 Vref
Vcc
Ro2
Ro2
Ro1
Vo
GND
PD1
CURRENT
AMPLIFIER
CURRENT
AMPLIFIER
EXTERNAL
GAIN RESISTANCE
Ro1
EXTERNAL
GAIN RESISTANCE
0.1 µF5 V
2
■ Dimensional outline (unit: mm)
KPICC0108EA
■ Block diagram
■ Function
S9684 series photo IC integrates a photodiode chip and an IC chip into the same package. The photodiode chip is internally
connected to the IC chip as shown in the block diagram. S9684 series should be used with terminals Ro1 and Ro2 connected to
an external gain resistance.
Two photocurrents are generated when a laser beam enters the dual-element photodiode. Each photocurrent is fed to the input
ter minal of the IC and, after being amplified by the current amplifier, flows to the exter nal gain resistance. At this time, voltages
VRO1 and VRO2 at terminals Ro1 and Ro2 are given by the following expression.
VRO1 (VRO2)=A × S × PI × Ro1 (Ro2) [V]
A: Current amplifier gain (S9684: 20 times, S9684-01: 6 times)
S: Photodiode sensitivity [A/W] (approx. 0.45 A/W at 780 nm)
PI: Input power [W]
Ro1, Ro2: External gain resistance [Ω]; usable range 2 kΩ to 10 kΩ
VRO1 and VRO2 are input to the internal comparator so the output Vo is “High” when VRO1 > VRO2 or “Low” when VRO1 < VRO2.
We recommend using S9684 series under the operating conditions that V RO1 and VRO2 are 2 to 3 V.
KPICA0056EB
■ Output waveforms of terminals 2, 3 and 5
KPICC0131EA
SCANNING
DIRECTION
PD1 PD2
R
O
1
R
O
2
V
O
