phase-out
© 2000 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C55V
VGS Continuous ±20 V
ID25 TC= 25°C; Note 1 200 A
ID90 TC= 90°C, Note 1 160 A
IS25 TC= 25°C; Note 1, 2 200 A
IS90 TC= 90°C, Note 1, 2 140 A
ID(RMS) Package lead current limit 45 A
EAS TC= 25°C 500 mJ
PDTC= 25°C 300 W
TJ-55 ... +175 °C
TJM 175 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.062 in.) from case for 10 s 300 °C
VISOL RMS leads-to-tab, 50/60 Hz, t = 1 minute 2500 V~
FCMounting force 11 ... 65 / 2.4 ...11 N/lb
Weight 3g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
RDS(on) VGS = 10 V, ID = 100 A, Note 3 5.1 mW
VGS = 10 V, ID = ID90, Note 3 4.0 mW
VGS(th) VDS = VGS, ID = 2 mA 2 4 V
IDSS VDS = VDSS TJ = 25°C20mA
VGS = 0 V TJ = 125°C 0.2 mA
IGSS VGS = ±20 VDC, VDS = 0 ±200 nA
G = Gate, D = Drain,
S = Source
* Patent pending
Trench Power MOSFET IXUC200N055 VDSS = 55 V
ISOPLUS220TM ID25 = 200 A
Electrically Isolated Back Surface RDS(on)= 5.1 mW
98761 (11/00)
ADVANCED TECHNICAL INFORMATION
ISOPLUS 220TM
Features
lSilicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
lTrench MOSFET
- very low RDS(on)
- fast switching
- usable intrinsic reverse diode
lLow drain to tab capacitance(<30pF)
lUnclamped Inductive Switching (UIS)
rated
Applications
lAutomotive 42V and 12V systems
- electronic switches to replace relays
and fuses
- choppers to replace series dropping
resistors used for motors, heaters, etc.
- inverters for AC drives, e.g. starter
generator
- DC-DC converters, e.g. 12V to 42V, etc.
lPower supplies
- DC - DC converters
- Solar inverters
lBattery powered systems
- choppers or inverters for motor control
in hand tools
- battery chargers
Advantages
lEasy assembly: no screws or isolation
foils required
lSpace savings
lHigh power density
G
DS
Isolated back surface*
phase-out
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Qg(on) 200 nC
Qgs VGS = 10 V, VDS = 14 V, ID = 100 A 44 nC
Qgd 72 nC
td(on) 35 ns
trVGS = 10 V, VDS = 0.5 • VDSS, 115 ns
td(off) ID = 50 A, RG = 4.7 W 230 ns
tf155 ns
RthJC 0.5 K/W
RthCH 0.30 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
VSD IF = 50 A, VGS = 0 V 0.9 1.3 V
Note 3
trr IF = 150 A, di/dt = -200 A/ms, VDS = 30 V 80 ns Note: All terminals are solder plated.
1 - Gate
2 - Drain
3 - Source
ISOPLUS220 OUTLINE
Note: 1. MOSFET chip capability
2. Intrinsic diode capability
3. Pulse test, t £ 300 ms, duty cycle d £ 2 %
IXUC200N055
