Single N-channel Trench MOSFET 100V, 40A, 28m General Description Features The MDD1902 uses advanced MagnaChip's MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1902 is suitable device for DC/DC Converters and general purpose applications. VDS = 100V ID = 40A @VGS = 10V RDS(ON) < 28m @VGS = 10V < 31m @VGS = 6.0V D G S Absolute Maximum Ratings (Tc = 25oC) Characteristics Symbol Rating Unit Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS 20 V 40 A 25 A 80 A o TC=25 C Continuous Drain Current (1) o TC=100 C ID IDM Pulsed Drain Current o TC=25 C Power Dissipation o TC=100 C Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range PD 83 W 33 EAS 200 TJ, Tstg -55~150 Symbol Rating RJA 50 RJC 1.5 mJ o C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Nov. 2010. Version 1.0 (1) 1 Unit o C/W MagnaChip Semiconductor Ltd. MDD1902 - Single N-Channel Trench MOSFET 100V MDD1902 Part Number Temp. Range MDD1902RH o -55~150 C Package Packing Rohs Status D-PAK Tape & Reel Halogen Free Electrical Characteristics (Tc =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 100 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2.0 3.0 4.0 V Drain Cut-Off Current IDSS VDS = 80V, VGS = 0V - - 1 Gate Leakage Current IGSS VGS = 20V, VDS = 0V - - 0.1 - 21 28 - 32 40 VGS = 6.0V, ID = 20A - 23.5 31 VDS = 5V, ID = 20A - 55 - - 39.8 48 - 11 - - 11.2 - - 2087 2505 - 82 - - 230 - - 2.1 2.5 - 10.5 - 27.5 - 38.5 - 14 - 0.7 1.2 V - 63 76 ns - 145 - nC VGS = 10V, ID = 20A Drain-Source ON Resistance Forward Transconductance o RDS(ON) gfs TJ=125 C A m S Dynamic Characteristics Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Rg VDS = 50V, ID = 20A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0MHz VGS=0V,VDS=0V,F=1MHz td(on) tr td(off) VDS=50V, VGS=10V, RL=3.2, RGEN=3.2 tf nC pF ns Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr IS = 1A, VGS = 0V IF = 20A, dl/dt = 100A/s Note : 1. 2. Surface mounted RF4 board with 2oz. Copper. Starting TJ=25C, L=1mH, IAS=20A, VDD=50V, VGS=10V Nov. 2010. Version 1.0 2 MagnaChip Semiconductor Ltd. MDD1902 - Single N-Channel Trench MOSFET 100V Ordering Information 40 6.0V ~ 10V 80 30 RDS(ON) [m ] ID, Drain Current[A] 5.0V 60 4.5V 40 VGS=6.0V 20 VGS=10V 4.0V 20 3.5V 10 0 0 1 2 3 4 0 5 10 20 VDS, Drain-Source Voltage [V] 40 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 60 2.2 2.0 1.8 50 1.6 VGS=10V ID=20A RDS(ON) [m ] RDS(ON), (Normalized) Drain-Source On-Resistance [m ] 30 ID [A] 1.4 1.2 125 40 1.0 30 0.8 0.6 25 0.4 -50 -25 0 25 50 75 100 125 20 150 4 6 8 o 10 VGS [V] TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature Fig.4 On-Resistance Variation with Gate to Source Voltage 20 10 *Note ; VDS=5.0V 1 15 0.1 -IS [A] ID [A] 0.01 10 1E-3 1E-4 5 125 125 1E-5 1E-6 0.0 0 0 1 2 3 4 5 0.2 0.4 0.6 0.8 1.0 -VSD [V] VGS [V] Fig.5 Transfer Characteristics Nov. 2010. Version 1.0 25 25 Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDD1902 - Single N-Channel Trench MOSFET 100V 100 3000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd * Note ; ID = 20A 9 2500 8 Ciss Capacitance [pF] 7 VGS [V] 6 5 4 3 2000 1500 * Notes ; 1. VGS = 0 V 2. f = 1 MHz 1000 2 Coss 500 Crss 1 0 0 10 20 30 0 40 0 5 10 15 Qg [nC] Fig.7 Gate Charge Characteristics 10 3 10 2 20 25 30 35 40 VDS [V] Fig.8 Capacitance Characteristics 50 40 10 1 10 ms Operation in This Area is Limited by R DS(on) 10 30 ID [A] ID [A] 1 ms 20 100ms 0 DC 10 Single Pulse R jC=1.5 /W Ta=25 10 0 25 -1 10 -1 10 0 10 1 10 2 10 3 50 75 100 125 150 TC [ ] VDS [V] Fig.10 Maximum Drain Current vs. Case Temperature Fig.9 Maximum Safe Operating Area Z ja, Normalized Thermal Response [t] 1 10 0 10 D=0.5 0.2 -1 10 0.1 0.05 0.02 0.01 -2 10 single pulse Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Z Ja* R Ja(t) + Ta R JC=1.5 /W -3 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve Nov. 2010. Version 1.0 4 MagnaChip Semiconductor Ltd. MDD1902 - Single N-Channel Trench MOSFET 100V 10 MDD1902 - Single N-Channel Trench MOSFET 100V Package Dimension D-PAK (TO-252) Dimensions are in millimeters, unless otherwise specified Nov. 2010. Version 1.0 5 MagnaChip Semiconductor Ltd. MDD1902 - Single N-Channel Trench MOSFET 100V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller's customers using or selling Seller's products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Nov. 2010. Version 1.0 6 MagnaChip Semiconductor Ltd.