Nov
.
2010
. V
ersion 1.0
MagnaC
hip Semiconductor L
td
.
1
MDD1902
–
Single N-Channel T
rench MOSFET 100V
A
bsolute Max
imum Ratings (Tc
= 25
o
C)
Characterist
ics
Symbol
Rating
Unit
Drain-Sour
ce Voltage
V
DSS
10
0
V
Gate-Source
Voltage
V
GSS
±
20
V
Continuo
us Drain Curre
nt
(1)
T
C
=25
o
C
I
D
40
A
T
C
=
10
0
o
C
25
A
Pulsed Dr
ain Current
I
DM
80
A
Pow
er Dissipation
T
C
=25
o
C
P
D
83
W
T
C
=
10
0
o
C
33
Single Pul
se Avalanche Ene
rgy
(2)
E
AS
200
mJ
Junction and
Storage Te
mperature Range
T
J
, T
stg
-55~150
o
C
Thermal Characteristics
Characterist
ics
Symbol
Rating
Unit
Thermal Resistance
, Junction-
to
-A
mbient
R
θJA
50
o
C/W
Thermal Resistance
, Junction-
to
-
Case
(1)
R
θJC
1.
5
MDD1902
Single N-channel T
rench MOSFET
10
0V
,
40
A
, 28
mΩ
Features
V
DS
=
100V
I
D
=
40
A
@V
GS
= 10V
R
DS(ON)
<
28m
Ω
@V
GS
= 10V
< 31m
Ω
@V
GS
=
6.0V
General Description
The
MD
D1
90
2
uses
advanced
MagnaChip
’
s
MOSFET
T
echnology
,
which
provides
high
performance
in
on-state
resistance,
fast
switching
performance
an
d
excellent
quality
.
MDD1902
is
sui
table
device
for
DC/DC
Converters and general purpose applicatio
ns.
D
G
S
Nov
.
2010
. V
ersion 1.0
Magna
Chip Semicondu
ctor Ltd
.
2
MDD1902
–
Single N-Channel T
rench MOSFET 100V
Ordering Information
Part Number
Temp. Range
Package
Packing
Ro
hs Status
MD
D1
90
2RH
-55~150
o
C
D-P
AK
T
ape & Reel
Halogen Free
Electrical Characteristics (Tc =25
o
C)
Characterist
ics
Symbol
Test Condition
Min
Typ
Max
Unit
Static Characterist
ics
Drain-Sour
ce Breakdow
n Voltage
BV
DSS
I
D
=
250μA, V
GS
=
0V
10
0
-
-
V
Gate Thr
eshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250μ
A
2.0
3.0
4.0
Drain Cu
t-Off Current
I
DSS
V
DS
=
80
V, V
GS
= 0V
-
-
1
μA
Gate Lea
kage Current
I
GSS
V
GS
= ±
20V, V
DS
= 0V
-
-
±0
.1
Drain-Sour
ce ON Resistan
ce
R
DS(ON)
V
GS
= 10V, I
D
=
20
A
-
21
28
mΩ
T
J
=125
o
C
-
32
40
V
GS
=
6.0V, I
D
= 20A
-
23.5
31
Forw
ard Transconductan
ce
g
fs
V
DS
= 5V,
I
D
=
20
A
-
55
-
S
Dynamic Charact
eristics
Total Gate
Charge
Q
g
V
DS
=
50
V, I
D
=
20
A,
V
GS
= 10
V
-
39.8
48
nC
Gate-Source
Charge
Q
gs
-
11
-
Gate-Dra
in Charge
Q
gd
-
11.2
-
Input Ca
pacitance
C
iss
V
DS
=
25
V, V
GS
= 0V,
f = 1.0MHz
-
2087
2505
pF
Reverse
Transfer Capaci
tance
C
rss
-
82
-
Output
Capacitance
C
oss
-
230
-
Gate Resistance
R
g
V
GS
=0V,V
DS
=0V,F=1
MHz
-
2.1
2.5
Ω
T
urn
-On Delay
Time
t
d(on)
V
DS
=50V, V
GS
=10
V,
R
L
=3.2
Ω
, R
G
EN
=3.2
Ω
-
10.5
ns
Rise Ti
me
t
r
-
27.5
Tu
rn-Off
Delay Time
t
d(off)
-
38.5
Fall Ti
me
t
f
-
14
Drain-Source Body
Diode Chara
cteristics
Source-Dra
in Diode Forw
ard Voltage
V
SD
I
S
=
1A,
V
GS
= 0V
-
0.7
1.
2
V
Body Diod
e Reverse Re
covery Time
t
rr
I
F
=
20
A,
dl/dt = 100A/μ
s
-
63
76
ns
Body Diod
e Reverse Re
covery Charge
Q
rr
-
145
-
nC
Note :
1.
Surface mounted RF
4 board with
2oz. Copper.
2.
Starting T
J
=25°
C, L=1m
H, I
AS
=
20
A, V
DD
=50V, V
GS
=10V
Nov
.
2010
. V
ersion 1.0
Magna
Chip Semicondu
ctor Ltd
.
3
MDD1902
–
Single N-Channel T
rench MOSFET 100V
Fig.5 T
ransfer Characteristics
Fig.1 On-Region Cha
racteristic
s
Fig.2 On-Resistance V
a
riation w
ith
Drain Current and
Gate V
oltage
Fig.3 On-Resistance V
a
riation w
ith
T
emperature
Fig.4 On-Resistance V
a
riation w
ith
Gate to Source V
oltage
Fig.6
Body
Diode
Forw
ard
V
ol
tage
V
ariation
w
ith
Source
Cu
rrent
and
T
emperature
0
1
2
3
4
5
0
20
40
60
80
100
3.5V
4.0V
4.5V
6.0V ~ 10V
5.0V
I
D
, Drain C
urrent[A]
V
DS
, Drain-Source Vo
ltage [V]
0
10
20
30
40
10
20
30
40
V
GS
=6.0V
V
GS
=10V
R
DS(ON)
[mΩ
]
I
D
[A]
-50
-25
0
25
50
75
100
125
150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
V
GS
=10V
I
D
=20A
R
DS(ON)
, (Normalize
d)
Drain-Sour
ce On-Res
istance [m
Ω
]
T
J
, Junc
tion Tempera
ture [
o
C]
4
6
8
10
20
30
40
50
60
125
℃
25
℃
R
DS(ON)
[mΩ
]
V
GS
[V]
0
1
2
3
4
5
0
5
10
15
20
125
℃
*Note ; VDS=5.0V
25
℃
I
D
[A]
V
GS
[V]
0.0
0.2
0.4
0.6
0.8
1.0
1E-6
1E-5
1E-4
1E-3
0.01
0.1
1
10
125
℃
25
℃
-I
S
[A]
-V
SD
[V]
Nov
.
2010
. V
ersion 1.0
Magna
Chip Semicondu
ctor Ltd
.
4
MDD1902
–
Single N-Channel T
rench MOSFET 100V
Fig.7 Gate Charge Ch
aracteristics
Fig.8 Capacit
ance Charact
eristics
Fig.9 Maximum Safe Op
erating
Area
Fig.10
M
aximum
Drain
C
urrent
vs.
Case
T
emperature
Fig.1
1 T
ransient T
hermal Response Curv
e
0
10
20
30
40
0
1
2
3
4
5
6
7
8
9
10
* Note ; I
D
= 20A
V
GS
[V]
Q
g
[nC]
0
5
10
15
20
25
30
35
40
0
500
1000
1500
2000
2500
3000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
* Notes ;
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
Capacitance
[pF]
V
DS
[V]
10
-1
10
0
10
1
10
2
10
3
10
-1
10
0
10
1
10
2
10
3
100ms
DC
10 ms
1 ms
Operation in This Area
is Limited by R
DS(on)
Single Pulse
R
θ
jC
=1.5
℃
/W
T
a
=25
℃
I
D
[A]
V
DS
[V]
25
50
75
100
125
150
0
10
20
30
40
50
I
D
[A]
T
C
[
℃
]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-3
10
-2
10
-1
10
0
10
1
0.01
※
Notes :
Duty Fa
ctor, D=t
1
/t
2
PEAK T
J
= P
DM
* Z
θ
Ja
* R
θ
Ja
(t) + T
a
R
Θ
JC
=1.5
℃
/W
single pulse
D=0.5
0.02
0.2
0.05
0.1
Z
θ
ja
, Normalized Thermal Response [t]
t
1
, Rectangular Pulse Duration [sec]
Nov
.
2010
. V
ersion 1.0
Magna
Chip Semicondu
ctor Ltd
.
5
MDD1902
–
Single N-Channel T
rench MOSFET 100V
Package Dimension
D-P
A
K (TO-
252)
Dimensions are in mil
limeters, un
less otherwise s
pecified
Nov
.
2010
. V
ersion 1.0
Magna
Chip Semicondu
ctor Ltd
.
6
MDD1902
–
Single N-Channel T
rench MOSFET 100V
DISCLAIMER:
The
Products
are
not
designed
for
use
in
hostile
environments,
including,
without
limitation,
aircraft,
nuclear
power
generation,
medical
appliances,
a
nd
devices
or
systems
in
w
hich
malfunction
of
any
Product
can
reasonably
be
expected
to
result
i
n
a
personal
injury.
Seller’s
customers
using
or
selling
Seller’s
products
for
use
in
su
ch
applications do so at their own risk and agree to fully defend and indemnify
Seller.
MagnaC
hip
reserves the
right
to
change the
specifications and
c
ircuitry without notice
at
any
time. MagnaChip does
not
consider responsibility
for
use
of
an
y
circ
uitry
other
tha
n
circuitry
entirely
inc
luded
in
a
MagnaCh
ip
produ
ct.
is
a
registered
trademark
of
Magn
aChip
Semiconductor
Ltd.
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