Si4288DY Vishay Siliconix Dual N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) () ID (A)a 0.020 at VGS = 10 V 9.2 0.023 at VGS = 4.5 V 8.6 * Halogen-free According to IEC 61249-2-21 Definition * TrenchFETPower MOSFET * 100 % Rg and UIS Tested * Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 4.9 APPLICATIONS * CCFL Inverter * DC/DC Converter * HDD D1 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View Ordering Information: Si4288DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 C) Symbol VDS VGS TC = 25 C TC = 70 C TA = 25 C TA = 70 C ID Pulsed Drain Current (10 s Pulse Width) Source-Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Limit 40 20 9.2 7.4 IS TC = 25 C TC = 70 C TA = 25 C TA = 70 C Operating Junction and Storage Temperature Range A 1.6b, c 50 10 5 3.1 2 ISM IAS EAS L = 0.1 mH V 7.4b, c 5.9b, c 50 2.6 IDM TC = 25 C TA = 25 C Unit PD W 2b, c 1.28b, c - 55 to 150 TJ, Tstg C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t 10 s Steady-State Symbol RthJA RthJF Typ. 49 30 Max. 62.5 40 Unit C/W Notes: a. Based on TC = 25 C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 120 C/W. Document Number: 67078 S10-2768-Rev. A, 29-Nov-10 www.vishay.com 1 Si4288DY Vishay Siliconix SPECIFICATIONS (TJ = 25 C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 A 40 Typ.a Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient VGS(th)/TJ Gate Threshold Voltage Gate-Body Leakage VDS = VGS, ID= 250 A IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) Drain-Source On-State Resistanceb Forward Transconductanceb ID = 250 A VGS(th) RDS(on) gfs V 49 mV/C - 5.2 2.5 V VDS = 0 V, VGS = 20 V 100 nA VDS = 40 V, VGS = 0 V 1 VDS = 40 V, VGS = 0 V, TJ = 55 C 10 VDS = 5 V, VGS = 10 V 1.2 20 A A VGS = 10 V, ID = 10 A 0.0165 0.0200 VGS = 4.5 V, ID = 7 A 0.019 0.023 VDS = 15 V, ID = 10 A 35 VDS = 20 V, VGS = 0 V, ID = 1 MHz 100 VDS = 20 V, VGS = 10 V, ID = 10 A 10 15 4.9 7.4 S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Rg 580 42 VDS = 20 V, VGS = 4.5 V, ID = 10 A td(off) 1.5 f = 1 MHz VDD = 20 V, RL = 2 ID 10 A, VGEN = 10 V, Rg = 1 0.6 2.7 5.4 7 14 9 18 16 32 tf 8 16 td(on) 12 24 10 20 tr td(off) nC 1.5 td(on) tr pF VDD = 20 V, RL = 2 ID 10 A, VGEN = 4.5 V, Rg = 1 tf 13 26 8 16 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 C 2.6 50 IS = 3 A IF = 5 A, dI/dt = 100 A/s, TJ = 25 C A 0.77 1.2 V 15 30 ns 7.5 15 nC 9 6 ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 s, duty cycle 2 %. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 67078 S10-2768-Rev. A, 29-Nov-10 Si4288DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 10 50 V GS = 10 V thru 4 V 8 ID - Drain Current (A) ID - Drain Current (A) 40 30 20 V GS = 3 V 6 4 T C = 25 C 2 10 T C = 125 C V GS = 2 V 0.5 1.0 1.5 2.0 T C = - 55 C 0 0 2.5 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.025 750 0.022 600 5 Ciss C - Capacitance (pF) RDS(on) - On-Resistance () 0 0.0 V GS = 4.5 V 0.019 V GS = 10 V 0.016 450 300 0.013 150 0.010 0 Coss Crss 0 10 20 30 40 50 0 24 32 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Capacitance 40 2.0 ID = 8 A ID = 10 A V GS = 10 V 1.7 V DS = 20 V 6 V DS = 10 V V DS = 30 V 4 (Normalized) 8 RDS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 16 On-Resistance vs. Drain Current 10 1.4 V GS = 4.5 V 1.1 0.8 2 0 0.0 8 2.1 4.2 6.3 Qg - Total Gate Charge (nC) Gate Charge Document Number: 67078 S10-2768-Rev. A, 29-Nov-10 8.4 10.5 0.5 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si4288DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 100 0.080 10 0.064 RDS(on) - On-Resistance () IS - Source Current (A) ID = 10 A T J = 150 C 1 0.1 T J = 25 C T J = 125 C 0.032 T J = 25 C 0.016 0.01 0.001 0.0 0.048 0.000 0.2 0.4 0.6 0.8 1.0 0 1.2 1 2 3 4 5 6 7 8 9 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 50 0.2 0.0 Power (W) VGS(th) Variance (V) 40 - 0.2 ID = 5 mA 30 20 - 0.4 ID = 250 A 10 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (C) 0.1 1 10 Time (s) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 Limited by RDS(on)* ID - Drain Current (A) 10 1 ms 1 10 ms 100 ms 0.1 TA = 25 C Single Pulse 0.01 0.01 BVDSS Limited 1s 10 s DC 100 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area www.vishay.com 4 Document Number: 67078 S10-2768-Rev. A, 29-Nov-10 Si4288DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 10 ID - Drain Current (A) 8 6 4 2 0 0 25 50 75 100 125 150 TC - Case Temperature (C) 4.0 1.5 3.2 1.2 2.4 0.9 Power (W) Power (W) Current Derating* 1.6 0.6 0.3 0.8 0.0 0.0 0 25 50 75 100 125 TC - Case Temperature (C) Power Derating, Junction-to-Foot 150 0 25 50 75 100 125 150 TA - Ambient Temperature (C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 67078 S10-2768-Rev. A, 29-Nov-10 www.vishay.com 5 Si4288DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 120 C/W 3. T JM - TA = PDMZthJA(t) 0.01 10 -4 Single Pulse 10 -3 4. Surface Mounted 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67078. www.vishay.com 6 Document Number: 67078 S10-2768-Rev. A, 29-Nov-10 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0 8 0 8 S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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