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Document Number: 67078
S10-2768-Rev. A, 29-Nov-10
Vishay Siliconix
Si4288DY
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ.aMax. Unit
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 40 V
VDS Temperature Coefficient VDS/TJID = 250 µA 49 mV/°C
VGS(th) Temperature Coefficient VGS(th)/TJ- 5.2
Gate Threshold Voltage VGS(th) VDS = VGS, ID= 250 µA 1.2 2.5 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = 40 V, VGS = 0 V 1µA
VDS = 40 V, VGS = 0 V, TJ = 55 °C 10
On-State Drain CurrentbID(on) VDS = 5 V, VGS = 10 V 20 A
Drain-Source On-State ResistancebRDS(on)
VGS = 10 V, ID = 10 A 0.0165 0.0200
VGS = 4.5 V, ID = 7 A 0.019 0.023
Forward Transconductancebgfs VDS = 15 V, ID = 10 A 35 S
Dynamica
Input Capacitance Ciss
VDS = 20 V, VGS = 0 V, ID = 1 MHz
580
pFOutput Capacitance Coss 100
Reverse Transfer Capacitance Crss 42
Total Gate Charge Qg VDS = 20 V, VGS = 10 V, ID = 10 A 10 15
nC
VDS = 20 V, VGS = 4.5 V, ID = 10 A
4.9 7.4
Gate-Source Charge Qgs 1.5
Gate-Drain Charge Qgd 1.5
Gate Resistance Rgf = 1 MHz 0.6 2.7 5.4
Tur n - O n D e l ay Time td(on)
VDD = 20 V, RL = 2
ID 10 A, VGEN = 10 V, Rg = 1
714
ns
Rise Time tr 918
Turn-Off Delay Time td(off) 16 32
Fall Time tf 816
Tur n - O n D e l ay Time td(on)
VDD = 20 V, RL = 2
ID 10 A, VGEN = 4.5 V, Rg = 1
12 24
Rise Time tr 10 20
Turn-Off Delay Time td(off) 13 26
Fall Time tf 816
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current ISTC = 25 °C 2.6 A
Pulse Diode Forward CurrentaISM 50
Body Diode Voltage VSD IS = 3 A 0.77 1.2 V
Body Diode Reverse Recovery Time trr
IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C
15 30 ns
Body Diode Reverse Recovery Charge Qrr 7.5 15 nC
Reverse Recovery Fall Time ta 9ns
Reverse Recovery Rise Time tb6