TLHE4200 Vishay Semiconductors High Intensity LED in o 3 mm Tinted Non-Diffused Package Color Yellow Type Technology TLHE4200 AlInGaP on GaAs Angle of Half Intensity o 22 94 8488 Description This device has been designed to meet the increasing demand for AlInGaP technology. It is housed in a 3 mm clear plastic package. The small viewing angle of these devices provides a high brightness. All packing units are categorized in luminous intensity and color groups. That allows users to assemble with uniform appearance. Features D D D D D D D AlInGaP technology Applications Standard o 3 mm (T-1) package Small mechanical tolerances Status lights OFF / ON indicator Background illumination Readout lights Maintenance lights Legend light Suitable for DC and high peak current Small viewing angle Very high intensity Luminous intensity color categorized Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified TLHE4200 Parameter Reverse voltage DC forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Document Number 83104 Rev. 3, 04-Oct-00 Test Conditions Tamb 60C tp 10 ms Tamb 60C t 5 s, 2 mm from body Symbol VR IF IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 30 0.1 80 100 -40 to +100 -55 to +100 260 400 Unit V mA A mW C C C C K/W www.vishay.com 1 (5) TLHE4200 Vishay Semiconductors Optical and Electrical Characteristics Tamb = 25_C, unless otherwise specified Yellow (TLHE4200 ) Parameter Luminous intensity Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance Test Conditions IF = 10 mA IF = 10 mA IF = 10 mA IF = 10 mA IF = 20 mA IR = 10 mA VR = 0, f = 1 MHz Type Symbol IV ld lp VF VR Cj Min 40 581 Typ 120 588 590 22 1.9 Max Unit mcd nm nm deg V V pF 594 2.6 5 15 Typical Characteristics (Tamb = 25_C, unless otherwise specified) 0 Iv rel - Relative Luminous Intensity PV - Power Dissipation ( mW ) 125 100 75 50 25 10 20 30 40 1.0 0.9 50 0.8 60 70 0.7 80 0 0 20 40 60 80 100 Tamb - Ambient Temperature ( C ) 95 10887 0.6 0.2 0 0.2 0.4 0.6 95 10041 Figure 1. Power Dissipation vs. Ambient Temperature Figure 3. Rel. Luminous Intensity vs. Angular Displacement 60 100 50 I F - Forward Current ( mA ) IF - Forward Current ( mA ) 0.4 40 30 20 10 10 1 1 0 0 95 10894 20 40 60 80 100 Tamb - Ambient Temperature ( C ) Figure 2. Forward Current vs. Ambient Temperature www.vishay.com 2 (5) 95 10878 1.5 2.0 2.5 3.0 VF - Forward Voltage ( V ) Figure 4. Forward Current vs. Forward Voltage Document Number 83104 Rev. 3, 04-Oct-00 TLHE4200 Vishay Semiconductors 10.00 IF = 10 mA 1.4 I Vrel- Relative Luminous Intensity I Vrel- Relative Luminous Intensity 1.6 1.2 1.0 0.8 0.6 0.4 0.2 0 0 Tamb - Ambient Temperature ( C ) 0.10 0.01 1 10 20 30 40 50 60 70 80 90 100 95 10880 1.00 96 11588 Figure 5. Rel. Luminous Intensity vs. Ambient Temperature I Vrel- Relative Luminous Intensity I Vrel- Relative Luminous Intensity 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 96 11589 1 2 5 0.5 0.2 10 20 50 I100 F(mA) 0.1 0.05 0.02 tp/T Figure 6. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle Document Number 83104 Rev. 3, 04-Oct-00 100 Figure 7. Relative Luminous Intensity vs. Forward Current 2.0 0 1 10 IF - Forward Current ( mA ) 1.2 IF = 10 mA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 550 560 570 580 590 600 610 620 630 640 650 95 10881 l - Wavelength ( nm ) Figure 8. Relative Luminous Intensity vs. Wavelength www.vishay.com 3 (5) TLHE4200 Vishay Semiconductors Dimensions in mm 95 10913 www.vishay.com 4 (5) Document Number 83104 Rev. 3, 04-Oct-00 TLHE4200 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 83104 Rev. 3, 04-Oct-00 www.vishay.com 5 (5)