TLHE4200
Vishay Semiconductors
1 (5)
Rev. 3, 04-Oct-00 www.vishay.comDocument Number 83104
High Intensity LED in ø 3 mm Tinted Non–Diffused
Package
Color Type Technology Angle of Half Intensity
±
ö
Yellow TLHE4200 AlInGaP on GaAs 22
°
Description
This device has been designed to meet the
increasing demand for AlInGaP technology.
It is housed in a 3 mm clear plastic package.
The small viewing angle of these devices provides
a high brightness.
All packing units are categorized in luminous intensity
and color groups. That allows users to assemble with
uniform appearance.
Features
D
AlInGaP technology
D
Standard ø 3 mm (T-1) package
D
Small mechanical tolerances
D
Suitable for DC and high peak current
D
Small viewing angle
D
Very high intensity
D
Luminous intensity color categorized
94 8488
Applications
Status lights
OFF / ON indicator
Background illumination
Readout lights
Maintenance lights
Legend light
Absolute Maximum Ratings
Tamb = 25
_
C, unless otherwise specified
TLHE4200
Parameter Test Conditions Symbol Value Unit
Reverse voltage VR5 V
DC forward current Tamb ≤ 60
°
C IF30 mA
Surge forward current tp ≤ 10
m
s IFSM 0.1 A
Power dissipation Tamb ≤ 60
°
C PV80 mW
Junction temperature Tj100
°
C
Operating temperature range Tamb –40 to +100
°
C
Storage temperature range Tstg –55 to +100
°
C
Soldering temperature t ≤ 5 s, 2 mm from body Tsd 260
°
C
Thermal resistance junction/ambient RthJA 400 K/W
TLHE4200
Vishay Semiconductors
2 (5) Rev. 3, 04-Oct-00
www.vishay.com Document Number 83104
Optical and Electrical Characteristics
Tamb = 25
_
C, unless otherwise specified
Yellow (TLHE4200 )
Parameter Test Conditions Type Symbol Min Typ Max Unit
Luminous intensity IF = 10 mA IV40 120 mcd
Dominant wavelength IF = 10 mA
l
d581 588 594 nm
Peak wavelength IF = 10 mA
l
p590 nm
Angle of half intensity IF = 10 mA ϕ±22 deg
Forward voltage IF = 20 mA VF1.9 2.6 V
Reverse voltage IR = 10
m
A VR5 V
Junction capacitance VR = 0, f = 1 MHz Cj15 pF
Typical Characteristics (Tamb = 25
_
C, unless otherwise specified)
020406080
0
25
50
75
100
125
P – Power Dissipation ( mW )
V
Tamb – Ambient Temperature ( °C )
100
95 10887
Figure 1. Power Dissipation vs. Ambient Temperature
0
10
20
30
40
60
020406080
I – Forward Current ( mA )
F
Tamb – Ambient Temperature ( °C )
100
95 10894
50
Figure 2. Forward Current vs. Ambient Temperature
0.4 0.2 0 0.2 0.4 0.6
95 10041
0.6
0.9
0.8
0°30°
10
°20
°
40°
50°
60°
70°
80°
0.7
1.0
I – Relative Luminous Intensity
v rel
Figure 3. Rel. Luminous Intensity vs.
Angular Displacement
1
10
100
1 1.5 2.0 2.5 3.0
VF – Forward Voltage ( V )95 10878
F
I – Forward Current ( mA )
Figure 4. Forward Current vs. Forward Voltage
TLHE4200
Vishay Semiconductors
3 (5)
Rev. 3, 04-Oct-00 www.vishay.comDocument Number 83104
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 102030405060708090100
Tamb – Ambient Temperature ( °C )95 10880
I – Relative Luminous Intensity
Vrel
IF = 10 mA
Figure 5. Rel. Luminous Intensity vs.
Ambient Temperature
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
1 10 100
96 11589
I – Relative Luminous Intensity
Vrel
tp/T
IF(mA)
50
520
2
0.5 0.2 0.1 0.05 0.021
Figure 6. Rel. Lumin. Intensity vs.
Forw. Current/Duty Cycle
0.01
0.10
1.00
10.00
1 10 100
IF – Forward Current ( mA )96 11588
I – Relative Luminous Intensity
Vrel
Figure 7. Relative Luminous Intensity vs.
Forward Current
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
550 560 570 580 590 600 610 620 630 640 650
l
– Wavelength ( nm )95 10881
I – Relative Luminous Intensity
Vrel
IF = 10 mA
Figure 8. Relative Luminous Intensity vs.
Wavelength
TLHE4200
Vishay Semiconductors
4 (5) Rev. 3, 04-Oct-00
www.vishay.com Document Number 83104
Dimensions in mm
95 10913
TLHE4200
Vishay Semiconductors
5 (5)
Rev. 3, 04-Oct-00 www.vishay.comDocument Number 83104
Ozone Depleting Substances Policy Statement
It is the policy of V ishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
