RBV5000 - RBV5010 SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 50 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* High case dielectric strength of 2000 VDC
* Ideal for printed circuit board
* Very good heat dissipation
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 7.7 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
RBV
5000
RBV
5001
RBV
5002
RBV
5004
RBV
5006
RBV
5008
RBV
5010
UNIT
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts
Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts
Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts
Maximum Average Forward Current Tc = 55°CIF(AV) 50 Amps.
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method) IFSM 400 Amps.
Current Squared Time at t < 8.3 ms. I2t660 A2S
Maximum Forward Voltage per Diode at IF = 25 Amps. VF1.1 Volts
Maximum DC Reverse Current Ta = 25 °CIR10 µA
at Rated DC Blocking Voltage Ta = 100 °CIR(H) 200 µA
Typical Thermal Resistance (Note 1) RθJC 1.5 °C/W
Operating Junction Temperature Range TJ10 °C
Storage Temperature Range TSTG - 40 to + 150 °C
Notes :
1. Thermal Resistance from junction to case with units mounted on heatsink. UPDATE : AUGUST 3, 1998
RATING
RBV25
Dimensions in millimeters
C3 4.9 ±
0.2
3.9 ±
0.2
~
∅ 3.2 ± 0.1
~
11 ± 0.2
17.5 ± 0.5
20 ± 0.3
0.7 ± 0.1
1.0 ± 0.1
2.0 ± 0.2
30 ± 0.3
7.5
±0.2
10
±0.2
+
7.5
±0.2
13.5 ± 0.3
RATING AND CHARACTERISTIC CURVES ( RBV5000 - RBV5010 )
FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK
RECTIFIED CURRENT FORWARD SURGE CURRENT
025 50 75 100 125 150 175
CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
PER DIODE
FORWARD VOLTAGE, VOLTS
P.C. Board Mounted with
SINE WAVE R-Load
30
20
10
60
50
100
10
1.0
400
600
300
200
100
0.1
10
80
0.01
0.01
1.0
100 140020 40 60 120
PERCENT OF RATED REVERSE
VOLTAGE, (%)
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD OUTPUT CURRENT
AMPERES
FORWARD CURRENT, AMPERES
REVERSE CURRENT,
MICROAMPERES
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
TJ = 50 °C
TJ = 100 °C
TJ = 25 °C
40
500
10 20 601 2 4 6 40 100
1.2 1.4 1.80.4 0.6 0.8 1.0 1.6