OUTPUT
GND
INPUT
-+
2.2k
2.2PF
VDD
-
+
DIAPHRAGM
AIRGAP
BACKPLATE
ELECTRET
CONNECTOR
LMV1012
x
x
x
x
x
x
x
x
xxx
x
xx
xx
IC
LMV1012
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SNAS194H –NOVEMBER 2002–REVISED MAY 2013
LMV1012 Analog Series: Pre-Amplified IC's for High Gain 2-Wire Microphones
Check for Samples: LMV1012
1FEATURES DESCRIPTION
The LMV1012 is an audio amplifier series for small
2• Typical LMV1012-15, 2.2V Supply, RL= 2.2 kΩ,form factor electret microphones. This 2-wire portfolio
C = 2.2 μF, VIN = 18 mVPP, Unless Otherwise is designed to replace the JFET amplifier currently
Specified being used. The LMV1012 series is ideally suited for
• Supply Voltage: 2V - 5V applications requiring high signal integrity in the
presence of ambient or RF noise, such as in cellular
• Supply Current: <180 μAcommunications. The LMV1012 audio amplifiers are
• Signal to Noise Ratio (A-Weighted): 60 dB specified to operate over a 2.2V to 5.0V supply
• Output Voltage Noise (A-Weighted): −89 dBV voltage range with fixed gains of 7.8 dB, 15.6 dB,
• Total Harmonic Distortion: 0.09% 20.9 dB, and 23.8 dB. The devices offer excellent
THD, gain accuracy and temperature stability as
• Voltage Gain compared to a JFET microphone.
– LMV1012-07: 7.8 dB The LMV1012 series enables a two-pin electret
– LMV1012-15: 15.6 dB microphone solution, which provides direct pin-to-pin
– LMV1012-20: 20.9 dB compatibility with the existing JFET market.
– LMV1012-25: 23.8 dB The devices are offered in extremely thin space
• Temperature Range: −40°C to 85°C saving 4-bump DSBGA packages. The LMV1012XP
is designed for 1.0 mm canisters and thicker ECM
• Offered in 4-Bump DSBGA Packages canisters. These extremely miniature packages are
designed for electret condenser microphones (ECM)
APPLICATIONS form factor.
• Cellular Phones
• Headsets
• Mobile Communications
• Automotive Accessories
• PDAs
• Accessory Microphone Products
Schematic Diagram Built-In Gain Electret Microphone
1Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date. Copyright © 2002–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
LMV1012
SNAS194H –NOVEMBER 2002–REVISED MAY 2013
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This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
Absolute Maximum Ratings(1)(2)
Human Body Model 2500V
ESD Tolerance(3) Machine Model 250V
Supply Voltage VDD - GND 5.5V
Storage Temperature Range −65°C to 150°C
Junction Temperature(4) 150°C max
Mounting Temperature Infrared or Convection (20 sec.) 235°C
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test
conditions, see the 5V Electrical Characteristics.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
(3) Human Body Model (HBM) is 1.5 kΩin series with 100 pF.
(4) The maximum power dissipation is a function of TJ(MAX) ,θJA and TA. The maximum allowable power dissipation at any ambient
temperature is PD= (TJ(MAX) - TA)/θJA. All numbers apply for packages soldered directly into a PC board.
Operating Ratings(1)
Supply Voltage 2V to 5V
Temperature Range −40°C to 85°C
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test
conditions, see the 5V Electrical Characteristics.
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2.2V Electrical Characteristics(1)
Unless otherwise specified, all limits are specified for TJ= 25°C, VDD = 2.2V, VIN = 18 mV, RL= 2.2 kΩand C = 2.2 μF.
Boldface limits apply at the temperature extremes.
Symbol Parameter Conditions Min(2) Typ(3) Max(2) Units
IDD Supply Current VIN = GND LMV1012-07 139 250
300
LMV1012-15 180 300
325 μA
LMV1012-20 160 250
300
LMV1012-25 141 250
300
SNR Signal to Noise Ratio f = 1 kHz, VIN = 18 mV, LMV1012-07 59
A-Weighted LMV1012-15 60 dB
LMV1012-20 61
LMV1012-25 61
VIN Max Input Signal f = 1 kHz and THD+N < LMV1012-07 170
1% LMV1012-15 100 mVPP
LMV1012-20 50
LMV1012-25 28
VOUT Output Voltage VIN = GND LMV1012-07 1.65 1.90 2.03
1.54 2.09
LMV1012-15 1.54 1.81 1.94
1.48 2.00 V
LMV1012-20 1.65 1.85 2.03
1.55 2.13
LMV1012-25 1.65 1.90 2.02
1.49 2.18
fLOW Lower −3dB Roll Off Frequency RSOURCE = 50Ω65 Hz
fHIGH Upper −3dB Roll Off Frequency RSOURCE = 50Ω95 kHz
enOutput Noise A-Weighted LMV1012-07 −96
LMV1012-15 −89 dBV
LMV1012-20 −84
LMV1012-25 −82
THD Total Harmonic Distortion f = 1 kHz, LMV1012-07 0.10
VIN = 18 mV LMV1012-15 0.09 %
LMV1012-20 0.12
LMV1012-25 0.15
CIN Input Capacitance 2 pF
ZIN Input Impedance >1000 GΩ
AVGain f = 1 kHz, LMV1012-07 6.4 7.8 9.5
RSOURCE = 50Ω5.5 10.0
LMV1012-15 14.0 15.6 16.9
13.1 17.5 dB
LMV1012-20 19.5 20.9 22.0
17.4 23.3
LMV1012-25 22.5 23.8 25.0
21.4 25.7
(1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that TJ= TA. No specification of parametric performance is indicated in the electrical tables under
conditions of internal self-heating where TJ> TA.
(2) All limits are specified by design or statistical analysis.
(3) Typical values represent the most likely parametric norm.
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5V Electrical Characteristics(1)
Unless otherwise specified, all limits are specified for TJ= 25°C, VDD = 5V, VIN = 18 mV, RL= 2.2 kΩand C = 2.2 μF.
Boldface limits apply at the temperature extremes.
Symbol Parameter Conditions Min(2) Typ(3) Max(2) Units
IDD Supply Current VIN = GND LMV1012-07 158 250
300
LMV1012-15 200 300
325 μA
LMV1012-20 188 260
310
LMV1012-25 160 250
300
SNR Signal to Noise Ratio f = 1 kHz, VIN = 18 mV, LMV1012-07 59
A-Weighted LMV1012-15 60 dB
LMV1012-20 61
LMV1012-25 61
VIN Max Input Signal f = 1 kHz and THD+N < LMV1012-07 170
1% LMV1012-15 100 mVPP
LMV1012-20 55
LMV1012-25 28
VOUT Output Voltage VIN = GND LMV1012-07 4.45 4.65 4.80
4.38 4.85
LMV1012-15 4.34 4.56 4.74
4.28 4.80 V
LMV1012-20 4.40 4.58 4.75
4.30 4.85
LMV1012-25 4.45 4.65 4.83
4.39 4.86
fLOW Lower −3dB Roll Off Frequency RSOURCE = 50Ω67 Hz
fHIGH Upper −3dB Roll Off Frequency RSOURCE = 50Ω150 kHz
enOutput Noise A-Weighted LMV1012-07 −96
LMV1012-15 −89 dBV
LMV1012-20 −84
LMV1012-25 −82
THD Total Harmonic Distortion f = 1 kHz, LMV1012-07 0.12
VIN = 18 mV LMV1012-15 0.13 %
LMV1012-20 0.18
LMV1012-25 0.21
CIN Input Capacitance 2 pF
ZIN Input Impedance >1000 GΩ
AVGain f = 1 kHz, LMV1012-07 6.4 8.1 9.5
RSOURCE = 50Ω5.5 10.7
LMV1012-15 14.0 15.6 16.9
13.1 17.5 dB
LMV1012-20 19.2 21.1 22.3
17.0 23.5
LMV1012-25 22.5 23.9 25.0
21.2 25.8
(1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that TJ= TA. No specification of parametric performance is indicated in the electrical tables under
conditions of internal self-heating where TJ> TA.
(2) All limits are specified by design or statistical analysis.
(3) Typical values represent the most likely parametric norm.
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Product Folder Links: LMV1012
A1
GND
B2
GND
B1
INPUT
X
A2
OUTPUT
LMV1012
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SNAS194H –NOVEMBER 2002–REVISED MAY 2013
Connection Diagram
4-Bump DSBGA (Top View)
NOTE
Pin numbers are referenced to package marking text orientation.
The actual physical placement of the package marking will vary slightly from part to part.
The package will designate the date code and will vary considerably. Package marking
does not correlate to device type in any way.
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Product Folder Links: LMV1012
10 1k 1M
FREQUENCY (Hz)
0
4
18
GAIN (dB)
100k
10k
100
14
12
2
16
10
8
6
-360
-280
0
-80
-120
-320
-40
-160
-200
-240
PHASE (°)
GAIN
PHASE
2 2.5 3 3.5 4 4.5 5 5.5
100
120
140
160
180
200
220
240
260
SUPPLY CURRENT (PA)
SUPPLY VOLTAGE (V)
-40°C
25°C
85°C
22.5 3 3.5 4 4.5 5
SUPPLY VOLTAGE (V)
100
120
140
160
180
200
220
SUPPLY CURRENT (PA)
5.5
85°C
25°C
-40°C
2 2.5 3 3.5 4 4.5 5 5.5
100
110
120
130
140
150
160
170
180
SUPPLY CURRENT (PA)
SUPPLY VOLTAGE (V)
85°C
25°C
-40°C
22.5 33.5 44.5 55.5
SUPPLY VOLTAGE (V)
120
140
160
180
200
220
240
260
SUPPLY CURRENT (PA)
85°C
25°C
-40°C
LMV1012
SNAS194H –NOVEMBER 2002–REVISED MAY 2013
www.ti.com
Typical Performance Characteristics
Unless otherwise specified, VS= 2.2V, RL= 2.2 kΩ, C = 2.2 μF, single supply, TA= 25°C
Supply Current vs. Supply Voltage (LMV1012-07) Supply Current vs. Supply Voltage (LMV1012-15)
Figure 1. Figure 2.
Supply Current vs. Supply Voltage (LMV1012-20) Supply Current vs. Supply Voltage (LMV1012-25)
Figure 3. Figure 4.
Gain and Phase vs. Frequency (LMV1012-07) Gain and Phase vs. Frequency (LMV1012-15)
Figure 5. Figure 6.
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10 100 1k 10k 100k
FREQUENCY (Hz)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
THD+N (%)
VIN = 18 mVPP
10 100 1k 10k 100k
FREQUENCY (Hz)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
THD+N (%)
VIN = 18 mVPP
10 100 1k 10k 100k
FREQUENCY (Hz)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
THD+N (%)
VIN = 18 mVPP
10 100 1k 10k 100k
FREQUENCY (Hz)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
THD+N (%)
VIN = 18 mVPP
10 1k 1M
FREQUENCY (Hz)
0
10
25
GAIN (dB)
100k
10k
100
20
15
5
GAIN
PHASE
-200
0
300
200
100
-100
250
150
50
-50
-150
PHASE (°)
LMV1012
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SNAS194H –NOVEMBER 2002–REVISED MAY 2013
Typical Performance Characteristics (continued)
Unless otherwise specified, VS= 2.2V, RL= 2.2 kΩ, C = 2.2 μF, single supply, TA= 25°C
Gain and Phase vs. Frequency (LMV1012-20) Gain and Phase vs. Frequency (LMV1012-25)
Figure 7. Figure 8.
Total Harmonic Distortion vs. Frequency (LMV1012-07) Total Harmonic Distortion vs. Frequency (LMV1012-15)
Figure 9. Figure 10.
Total Harmonic Distortion vs. Frequency (LMV1012-20) Total Harmonic Distortion vs. Frequency (LMV1012-25)
Figure 11. Figure 12.
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10 100 1k 10k 100k
FREQUENCY (Hz)
-150
-145
-140
-135
-130
-125
-120
-115
-110
-105
-100
NOISE (dBV/
Hz)
INPUT IS CONNECTED
TO GND
10 100 1k 10k 100k
FREQUENCY (Hz)
-150
-145
-140
-135
-130
-125
-120
-115
-110
-105
-100
INPUT IS CONNECTED TO
GND
NOISE (dBV/
Hz)
0 10 20 30 40 50 60
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
THD+N (%)
INPUT VOLTAGE (mVPP)
f = 1 kHz
0 10 20 30 40
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
THD+N (%)
INPUT VOLTAGE (mVPP)
f = 1 kHz
0 50 100 150 200 250
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
THD+N (%)
INPUT VOLTAGE (mVPP)
f = 1 kHz
0 20 40 60 80 100 120
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
THD+N (%)
INPUT VOLTAGE (mVPP)
f = 1 kHz
LMV1012
SNAS194H –NOVEMBER 2002–REVISED MAY 2013
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Typical Performance Characteristics (continued)
Unless otherwise specified, VS= 2.2V, RL= 2.2 kΩ, C = 2.2 μF, single supply, TA= 25°C
Total Harmonic Distortion vs. Input Voltage (LMV1012-07) Total Harmonic Distortion vs. Input Voltage (LMV1012-15)
Figure 13. Figure 14.
Total Harmonic Distortion vs. Input Voltage (LMV1012-20) Total Harmonic Distortion vs. Input Voltage (LMV1012-25)
Figure 15. Figure 16.
Output Noise vs. Frequency (LMV1012-07) Output Noise vs. Frequency (LMV1012-15)
Figure 17. Figure 18.
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Product Folder Links: LMV1012
10 100 1k 10k 100k
FREQUENCY (Hz)
-150
-145
-140
-135
-130
-125
-120
-115
-110
-105
-100
NOISE (dBV/
Hz)
INPUT IS CONNECTED
TO GND
10 100 1k 10k 100k
FREQUENCY (Hz)
-150
-145
-140
-135
-130
-125
-120
-115
-110
-105
-100
NOISE (dBV/
Hz)
INPUT IS CONNECTED
TO GND
LMV1012
www.ti.com
SNAS194H –NOVEMBER 2002–REVISED MAY 2013
Typical Performance Characteristics (continued)
Unless otherwise specified, VS= 2.2V, RL= 2.2 kΩ, C = 2.2 μF, single supply, TA= 25°C
Output Noise vs. Frequency (LMV1012-20) Output Noise vs. Frequency (LMV1012-25)
Figure 19. Figure 20.
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10 100 1k 10k 100k
FREQUENCY (Hz)
-70
-60
-50
-40
-30
-20
-10
0
10
dBV
DIAPHRAGM
AIRGAP
BACKPLATE
ELECTRET
CONNECTOR
LMV1012
x
x
x
x
x
x
x
x
xxx
x
xx
xx
IC
LMV1012
SNAS194H –NOVEMBER 2002–REVISED MAY 2013
www.ti.com
APPLICATION SECTION
HIGH GAIN
The LMV1012 series provides outstanding gain versus the JFET and still maintains the same ease of
implementation, with improved gain, linearity and temperature stability. A high gain eliminates the need for extra
external components.
BUILT IN GAIN
The LMV1012 is offered in 0.3 mm height space saving small 4-pin DSBGA packages in order to fit inside the
different size ECM canisters of a microphone. The LMV1012 is placed on the PCB inside the microphone.
The bottom side of the PCB usually shows a bull's eye pattern where the outer ring, which is shorted to the metal
can, should be connected to the ground. The center dot on the PCB is connected to the VDD through a resistor.
This phantom biasing allows both supply voltage and output signal on one connection.
Figure 21. Built in Gain
A-WEIGHTED FILTER
The human ear has a frequency range from 20 Hz to about 20 kHz. Within this range the sensitivity of the human
ear is not equal for each frequency. To approach the hearing response weighting filters are introduced. One of
those filters is the A-weighted filter.
The A-weighted filter is usually used in signal to noise ratio measurements, where sound is compared to device
noise. This filter improves the correlation of the measured data to the signal to noise ratio perceived by the
human ear.
Figure 22. A-Weighted Filter
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A-WEIGHTED FILTER
5 pF
LMV1012
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SNAS194H –NOVEMBER 2002–REVISED MAY 2013
MEASURING NOISE AND SNR
The overall noise of the LMV1012 is measured within the frequency band from 10 Hz to 22 kHz using an A-
weighted filter. The input of the LMV1012 is connected to ground with a 5 pF capacitor, as in Figure 23. Special
precautions in the internal structure of the LMV1012 have been taken to reduce the noise on the output.
Figure 23. Noise Measurement Setup
The signal to noise ratio (SNR) is measured with a 1 kHz input signal of 18 mVPP using an A-weighted filter. This
represents a sound pressure level of 94 dB SPL. No input capacitor is connected for the measurement.
SOUND PRESSURE LEVEL
The volume of sound applied to a microphone is usually stated as a pressure level referred to the threshold of
hearing of the human ear. The sound pressure level (SPL) in decibels is defined by:
Sound pressure level (dB) = 20 log Pm/PO
where
• Pmis the measured sound pressure
• POis the threshold of hearing (20 μPa). (1)
In order to be able to calculate the resulting output voltage of the microphone for a given SPL, the sound
pressure in dB SPL needs to be converted to the absolute sound pressure in dBPa. This is the sound pressure
level in decibels referred to 1 Pascal (Pa).
The conversion is given by:
dBPa = dB SPL + 20*log 20 μPa (2)
dBPa = dB SPL - 94 dB (3)
Translation from absolute sound pressure level to a voltage is specified by the sensitivity of the microphone. A
conventional microphone has a sensitivity of -44 dBV/Pa.
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10 1k 1M
FREQUENCY (Hz)
-5
5
20
GAIN (dB)
100k
10k
100
15
10
0
VDD = 2.2V
-40°C
25°C
85°C
ABSOLUTE
SOUND
PRESSURE
[dBPa]
-94 dB SENSITIVITY
[dBV/Pa]
SOUND
PRESSURE
[dB SPL]
VOLTAGE
[dBV]
LMV1012
SNAS194H –NOVEMBER 2002–REVISED MAY 2013
www.ti.com
Figure 24. dB SPL to dBV Conversion
Example: Busy traffic is 70 dB SPL
VOUT = 70 −94 −44 = −68 dBV (4)
This is equivalent to 1.13 mVPP
Since the LMV1012-15 has a gain of 6 (15.6 dB) over the JFET, the output voltage of the microphone is 6.78
mVPP. By implementing the LMV1012-15, the sensitivity of the microphone is -28.4 dBV/Pa (−44 + 15.6).
LOW FREQUENCY CUT OFF FILTER
To reduce noise on the output of the microphone a low frequency cut off filter has been implemented. This filter
reduces the effect of wind and handling noise.
It's also helpful to reduce the proximity effect in directional microphones. This effect occurs when the sound
source is very close to the microphone. The lower frequencies are amplified which gives a bass sound. This
amplification can cause an overload, which results in a distortion of the signal.
Figure 25. LMV1012-15 Gain vs. Frequency Over Temperature
The LMV1012 is optimized to be used in audio band applications. By using the LMV1012, the gain response is
flat within the audio band and has linearity and temperature stability (see Figure 25).
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INPUT
OUTPUT
VDD
10 pF 33 pF
LMV1012
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SNAS194H –NOVEMBER 2002–REVISED MAY 2013
NOISE
Noise pick-up by a microphone in cell phones is a well-known problem. A conventional JFET circuit is sensitive
for noise pick-up because of its high output impedance, which is usually around 2.2 kΩ.
RF noise is amongst other caused by non-linear behavior. The non-linear behavior of the amplifier at high
frequencies, well above the usable bandwidth of the device, causes AM-demodulation of high frequency signals.
The AM modulation contained in such signals folds back into the audio band, thereby disturbing the intended
microphone signal. The GSM signal of a cell phone is such an AM-modulated signal. The modulation frequency
of 216 Hz and its harmonics can be observed in the audio band. This kind of noise is called bumblebee noise.
RF noise caused by a GSM signal can be reduced by connecting two external capacitors to ground, see
Figure 26. One capacitor reduces the noise caused by the 900 MHz carrier and the other reduces the noise
caused by 1800/1900 MHz.
Figure 26. RF Noise Reduction
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REVISION HISTORY
Changes from Revision G (May 2013) to Revision H Page
• Changed layout of National Data Sheet to TI format .......................................................................................................... 13
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PACKAGE OPTION ADDENDUM
www.ti.com 3-Jul-2014
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead/Ball Finish
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
LMV1012TP-25/NOPB ACTIVE DSBGA YPB 4 250 Green (RoHS
& no Sb/Br) SNAGCU Level-1-260C-UNLIM
LMV1012TPX-15/NOPB ACTIVE DSBGA YPB 4 3000 Green (RoHS
& no Sb/Br) SNAGCU Level-1-260C-UNLIM -40 to 85
LMV1012TPX-25/NOPB ACTIVE DSBGA YPB 4 3000 Green (RoHS
& no Sb/Br) SNAGCU Level-1-260C-UNLIM -40 to 85
LMV1012UP-07/NOPB ACTIVE DSBGA YPC 4 250 Green (RoHS
& no Sb/Br) SNAGCU Level-1-260C-UNLIM
LMV1012UP-15/NOPB ACTIVE DSBGA YPC 4 250 Green (RoHS
& no Sb/Br) SNAGCU Level-1-260C-UNLIM
LMV1012UP-20/NOPB ACTIVE DSBGA YPC 4 250 Green (RoHS
& no Sb/Br) SNAGCU Level-1-260C-UNLIM
LMV1012UP-25/NOPB ACTIVE DSBGA YPC 4 250 Green (RoHS
& no Sb/Br) SNAGCU Level-1-260C-UNLIM
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
PACKAGE OPTION ADDENDUM
www.ti.com 3-Jul-2014
Addendum-Page 2
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
LMV1012TP-25/NOPB DSBGA YPB 4 250 178.0 8.4 1.02 1.09 0.66 4.0 8.0 Q1
LMV1012TPX-15/NOPB DSBGA YPB 4 3000 178.0 8.4 1.02 1.09 0.66 4.0 8.0 Q1
LMV1012TPX-25/NOPB DSBGA YPB 4 3000 178.0 8.4 1.02 1.09 0.66 4.0 8.0 Q1
LMV1012UP-07/NOPB DSBGA YPC 4 250 178.0 8.4 1.02 1.09 0.56 4.0 8.0 Q1
LMV1012UP-15/NOPB DSBGA YPC 4 250 178.0 8.4 1.02 1.09 0.56 4.0 8.0 Q1
LMV1012UP-20/NOPB DSBGA YPC 4 250 178.0 8.4 1.02 1.09 0.56 4.0 8.0 Q1
LMV1012UP-25/NOPB DSBGA YPC 4 250 178.0 8.4 1.02 1.09 0.56 4.0 8.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 18-Aug-2014
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
LMV1012TP-25/NOPB DSBGA YPB 4 250 210.0 185.0 35.0
LMV1012TPX-15/NOPB DSBGA YPB 4 3000 210.0 185.0 35.0
LMV1012TPX-25/NOPB DSBGA YPB 4 3000 210.0 185.0 35.0
LMV1012UP-07/NOPB DSBGA YPC 4 250 210.0 185.0 35.0
LMV1012UP-15/NOPB DSBGA YPC 4 250 210.0 185.0 35.0
LMV1012UP-20/NOPB DSBGA YPC 4 250 210.0 185.0 35.0
LMV1012UP-25/NOPB DSBGA YPC 4 250 210.0 185.0 35.0
PACKAGE MATERIALS INFORMATION
www.ti.com 18-Aug-2014
Pack Materials-Page 2
MECHANICAL DATA
YPC0004
www.ti.com
UPA04XXX (Rev C)
0.350±0.045
D
E
4215139/A 12/12
A
. All linear dimensions are in millimeters. Dimensioning and tolerancing per ASME Y14.5M-1994.
B. This drawing is subject to change without notice.
NOTES:
D: Max =
E: Max =
1.057 mm, Min =
0.981 mm, Min =
0.996 mm
0.92 mm
www.ti.com
PACKAGE OUTLINE
C
0.575 MAX
0.15
0.11
0.5
0.5
4X 0.18
0.16
B E A
D
4215097/B 07/2016
DSBGA - 0.575 mm max heightYPB0004
DIE SIZE BALL GRID ARRAY
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
SYMM
SYMM
BALL A1
CORNER
SEATING PLANE
BALL TYP 0.05 C
12
0.015 C A B
A
B
SCALE 12.000
D: Max =
E: Max =
1.057 mm, Min =
0.981 mm, Min =
0.996 mm
0.92 mm
www.ti.com
EXAMPLE BOARD LAYOUT
4X ( 0.16)
( 0.16)
METAL 0.05 MAX
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
( 0.16)
SOLDER MASK
OPENING
0.05 MIN
(0.5)
(0.5)
4215097/B 07/2016
DSBGA - 0.575 mm max heightYPB0004
DIE SIZE BALL GRID ARRAY
NOTES: (continued)
3. Final dimensions may vary due to manufacturing tolerance considerations and also routing constraints.
See Texas Instruments Literature No. SNVA009 (www.ti.com/lit/snva009).
SOLDER MASK DETAILS
NOT TO SCALE
12
A
B
SYMM
SYMM
LAND PATTERN EXAMPLE
SCALE:40X
NON-SOLDER MASK
DEFINED
(PREFERRED) SOLDER MASK
DEFINED
www.ti.com
EXAMPLE STENCIL DESIGN
4X ( 0.3) (R0.05) TYP
METAL
TYP
(0.5) TYP
(0.5) TYP
4215097/B 07/2016
DSBGA - 0.575 mm max heightYPB0004
DIE SIZE BALL GRID ARRAY
NOTES: (continued)
4. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release.
12
A
B
SYMM
SYMM
SOLDER PASTE EXAMPLE
BASED ON 0.125mm THICK STENCIL
SCALE:50X
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Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Texas Instruments:
LMV1012TP-07/NOPB LMV1012TP-15/NOPB LMV1012TP-25/NOPB LMV1012TPX-15/NOPB LMV1012TPX-
25/NOPB LMV1012UP-07/NOPB LMV1012UP-15/NOPB LMV1012UP-20/NOPB LMV1012UP-25/NOPB
LMV1012UPX-07/NOPB LMV1012UPX-25/NOPB LMV1012XP-15/NOPB LMV1012XP-25/NOPB LMV1012XPX-
15/NOPB LMV1012XPX-25/NOPB LMV1012UPX-15/NOPB LMV1012UPX-20/NOPB