VN05N
HIGH SIDE SMART POWER SOLID STATE RELAY
■OUTPUT CURRENT (CONTINUOUS): 13A @
Tc=25oC
■5V LOGIC LEVEL COMPATIBLE INPUT
■THERMAL SHUT-DOWN
■UNDER VOLTAGE SHUT-DOWN
■OPEN DRAIN DIAGNOSTIC OUTPUT
■VERY LOW STAND-BY POWER
DISSIPATION
DESCRIPTION
The VN05N is a monolithic device made using
SGS-THOMSON Vertical Intelligent Power
Technology, intended for driving resistive or
inductive loads with one side grounded.
Built-in thermal shut-down protects the chip from
over temperature and short circuit.
The input control is 5V logic level compatible.
The open drain diagnostic output indicates open
circuit (no load) and over temperature status.
September 1994
BLOCK DIAGRAM
TYPE VDSS RDS(on) IOUT VCC
VN05N 60 V 0.18 Ω13 A 26 V
PENTAWATT
(vertical) PENTAWATT
(horizontal)
PENTAWATT
(in-line)
ORDER CODES:
PENTAWATT vertical VN05N
PENTAWATT horizontal VN05N (011Y)
PENTAWATT in-line VN05N (012Y)
1/11
ABSOLUTE MAXIMUM RATING
Symbol Parameter Value Unit
V(BR)DSS Dr ain-So ur ce B re ak d ow n Vo l ta ge 60 V
IOUT Output Current (co nt.) 13 A
IRReverse Output Current -13 A
IIN Input Current ±10 mA
-VCC Reverse Supply Volt age -4 V
ISTAT St atus Curr ent ±10 mA
VESD Electrostatic Discharge (1.5 kΩ, 100 pF) 2000 V
Ptot Power Dissipation at Tc ≤ 25 oC 56 W
TjJu nct ion Op era ting T empe rat ure -40 t o 150 oC
Tstg St ora ge Tem perature -55 t o 150 oC
CONNECTION DIAGRAM
CURRENT AND VOLTAGE CONVENTIONS
VN05N
2/11
THERMAL DATA
Rthj-case
Rthj-amb Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max 2.2
60
oC/W
oC/W
ELECTRICAL CHARACTERI S TICS (VCC = 13 V; -40 ≤ Tj ≤ 125 oC unles s oth er wise spec ified )
POWER
Symbol Paramete r Test Conditions Min. Typ. Ma x. Uni t
VCC Supply Voltage 7 26 V
Ron On S t at e Re s ist an c e I OUT = 6 A
IOUT = 6 A Tj = 25 oC0.36
0.18 Ω
Ω
ISSupply Current Off State Tj ≥ 25 oC
On St ate 50
15 µA
mA
SWITCHING
Symbol Paramete r Test Conditions Min. Typ. Ma x. Uni t
td(on) Turn-on Delay Time Of
Ou tp ut Curr e nt IOUT = 6 A Re sis t i ve Lo ad
Input Rise Time < 0.1 µs Tj = 25 oC15 µs
trRi se Time Of Output
Current IOUT = 6 A Re s ist i ve Lo ad
Input Rise Time < 0.1 µs Tj = 25 oC30 µs
td(off) T urn-of f Delay Time Of
Ou tp ut Curr e nt IOUT = 6 A Re sis t i ve Lo ad
Input Rise Time < 0.1 µs Tj = 25 oC20 µs
tfFall Tim e Of Output
Current IOUT = 6 A Re s ist i ve Lo ad
Input Rise Time < 0.1 µs Tj = 25 oC10 µs
(di/dt)on Turn-on C urrent Slope IOUT = 6 A
IOUT = IOV 0.5
2A/µs
A/µs
(di/dt)off T urn -of f Curren t Slope IOUT = 6 A
IOUT = IOV 2
4A/µs
A/µs
LOGIC INPUT
Symbol Paramete r Test Conditions Min. Typ. Ma x. Uni t
VIL Input Low Level
Voltage 0.8 V
VIH Input High Level
Voltage 2(*)V
V
I(hyst.) Input Hysteresis
Voltage 0.5 V
IIN Input Current VIN = 5 V 250 500 µA
VICL Input Clamp Voltage IIN = 10 mA
IIN = -10 mA 6
-0.7 V
V
PROTECTIONS AND DIAGNOSTICS
Symbol Paramete r Test Conditions Min. Typ. Ma x. Uni t
VSTAT (•) Status Voltage Output
Low ISTAT = 1. 6 mA 0.4 V
VUSD Under Voltage Shut
Down 6.5 V
VN05N
3/11
ELECTRICAL CHARACTERI S TICS (continued)
PROTECTION AND DIAGNOSTICS (continued)
Symbol Paramete r Test Conditions Min. Typ. Ma x. Uni t
VSCL (•) Status Clamp Voltage ISTAT = 10 mA
ISTAT = -10 mA 6
-0.7 V
V
tSC Sw it c h-o ff T im e i n
Sh or t C irc u i t Co nd it i on
at Start-Up
RLOAD < 10 mΩ Tc = 25 oC1.55ms
I
OV Over C urrent RLOAD < 10 mΩ - 4 0 ≤ Tc ≤ 125 oC60A
I
AV Av erag e Cur rent in
Short Circuit RLOAD < 10 mΩ Tc = 85 oC1.4A
I
OL Open Load Current
Level 5180mA
T
TSD T hermal Shut-down
Temperature 140 oC
TRReset Temperature 125 oC
(*) The VIH is internally c lamped at 6V about. It is possibl e to connect this pin to an higher v oltage via an external resi stor
calculated to not ex ceed 10 mA at the input pin.
(•) Status determi nation > 100 µs after the s witching edge.
FUNCTIONAL DESCRIPTION
The device has a diagnostic output which
indicates open circuit (no load) and over
temperature conditions. The output signals are
processed by internal logic.
To protect the device against short circuit and
over-current condition, the thermal protection
turns the integrated Power MOS off at a minimum
junction temperature of 140 oC. When the
temperature returns to about 125 oC the switch is
automatically turned on again.
In short circuit conditions the protection reacts
with virtually no delay, the sensor being located in
the region of the die where the heat is generated.
PROTECTING THE DEVICE AGAINST REVER-
SE BATTERY
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between pin 1 (GND) and
ground, as shown in the typical application circuit
(fig. 3).
The consequences of the voltage drop across
this diode are as follows:
–If the input is pulled to power GND, a negative
voltage of -VF is seen by the device. (VIL, VIH
thresholds and VSTAT are increased by VF with
respect to power GND).
–The undervoltage shutdown level is increased
by VF.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [1]
(see application circuit in fig. 4), which becomes
the common signal GND for the whole control
board.
In this way no shift of VIH, VIL and VSTAT takes
place and no negative voltage appears on the
INPUT pin; this solution allows the use of a
standard diode, with a breakdown voltage able to
handle any ISO normalized negative pulses that
occours in the automotive environment.
VN05N
4/11
TRUTH TABLE
INPUT OUTPUT DIAGNOSTIC
Normal Operation L
HL
HH
H
Open Circuit (No Load) H H L
Over-temperature H L L
Under-voltage X L H
Figure 1: Waveforms
Figure 2: Over Current Test Circuit
VN05N
5/11
Figure 3: Typical Application Circuit With A Schottky Diode For Reverse Supply Protection
Figure 4: Typical Application Circuit With Separate Signal Ground
VN05N
6/11
RDS(on) vs Junction Temperature RDS(on) vs Supply Voltage
RDS(on) vs Output Current Input voltages vs Junction Temperature
Output Current Derating Open Load vs Junction Temperature
VN05N
7/11
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.8 0.189
C 1.37 0.054
D 2.4 2.8 0.094 0.110
D1 1.2 1.35 0.047 0.053
E 0.35 0.55 0.014 0.022
F 0.8 1.05 0.031 0.041
F1 1 1.4 0.039 0.055
G 3.2 3.4 3.6 0.126 0.134 0.142
G1 6.6 6.8 7 0.260 0.268 0.276
H2 10.4 0.409
H3 10.05 10.4 0.396 0.409
L 17.85 0.703
L1 15.75 0.620
L2 21.4 0.843
L3 22.5 0.886
L5 2.6 3 0.102 0.118
L6 15.1 15.8 0.594 0.622
L7 6 6.6 0.236 0.260
M 4.5 0.177
M1 4 0.157
Dia 3.65 3.85 0.144 0.152
L2
L3
L5
L7
L6
Dia.
A
C
D
E
D1
H3
H2
F
G
G1
L1
L
MM1
F1
P010E
Pentawatt (vertical) MECHANICAL DATA
VN05N
8/11
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.8 0.189
C 1.37 0.054
D 2.4 2.8 0.094 0.110
D1 1.2 1.35 0.047 0.053
E 0.35 0.55 0.014 0.022
F 0.8 1.05 0.031 0.041
F1 1 1.4 0.039 0.055
G 3.2 3.4 3.6 0.126 0.134 0.142
G1 6.6 6.8 7 0.260 0.268 0.276
H2 10.4 0.409
H3 10.05 10.4 0.396 0.409
L 14.2 15 0.559 0.590
L1 5.7 6.2 0244
L2 14.6 15.2 0.598
L3 3.5 4.1 0.137 0.161
L5 2.6 3 0.102 0.118
L6 15.1 15.8 0.594 0.622
L7 6 6.6 0.236 0.260
Dia 3.65 3.85 0.144 0.152
P010F
Pentawatt (horizontal) MECHANICAL DATA
VN05N
9/11
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.8 0.189
C 1.37 0.054
D 2.4 2.8 0.094 0.110
D1 1.2 1.35 0.047 0.053
E 0.35 0.55 0.014 0.022
F 0.8 1.05 0.031 0.041
F1 1 1.4 0.039 0.055
G 3.2 3.4 3.6 0.126 0.134 0.142
G1 6.6 6.8 7 0.260 0.268 0.276
H2 10.4 0.409
H3 10.05 10.4 0.396 0.409
L2 23.05 23.4 23.8 0.907 0.921 0.937
L3 25.3 25.65 26.1 0.996 1.010 1.028
L5 2.6 3 0.102 0.118
L6 15.1 15.8 0.594 0.622
L7 6 6.6 0.236 0.260
Dia 3.65 3.85 0.144 0.152
P010D
Pentawatt (In- Line) MECHANICAL DATA
VN05N
10/11
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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VN05N
11/11
