AO4402 20V N-Channel MOSFET General Description Product Summary The AO4402 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. ID (at VGS=4.5V) VDS 20V 20A RDS(ON) (at VGS=4.5V) < 5.5m RDS(ON) (at VGS=2.5V) < 7m 100% UIS Tested 100% Rg Tested SOIC-8 D Top View D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25C Continuous Drain Current Pulsed Drain Current C Units V 12 V 20 ID TA=70C Maximum 20 16 IDM A 140 Avalanche Current C IAS, IAR 57 A Avalanche energy L=0.1mH C TA=25C EAS, EAR 162 mJ Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 1: Nov 2010 3.1 PD TA=70C TJ, TSTG Symbol t 10s Steady-State Steady-State W 2 RJA RJL www.aosmd.com -55 to 150 Typ 31 59 16 C Max 40 75 24 Units C/W C/W C/W Page 1 of 6 AO4402 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250A, VGS=0V TJ=55C Gate-Body leakage current VDS=0V, VGS= 12V VDS=VGS ID=250A 0.5 ID(ON) On state drain current VGS=10V, VDS=5V 140 100 nA 1 1.6 V 4.6 5.5 5.8 7 VGS=2.5V, ID=18A 5.5 7 m 1 V 4 A VGS=4.5V, ID=20A Static Drain-Source On-Resistance TJ=125C A gFS Forward Transconductance VDS=5V, ID=20A 105 VSD Diode Forward Voltage IS=1A,VGS=0V 0.6 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs Gate Source Charge VGS=10V, VDS=10V, ID=20A Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr IF=20A, dI/dt=500A/s Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/s Qrr A 5 Gate Threshold Voltage Units V 1 IGSS Coss Max 20 VDS=20V, VGS=0V VGS(th) RDS(ON) Typ m S 3080 3860 4630 pF 520 740 960 pF 350 580 810 pF 0.6 1.4 2.1 28 36 43 nC 7 9 11 nC 7 12 17 nC VGS=10V, VDS=10V, RL=0.5, RGEN=3 7 ns 8 ns 70 ns 18 ns 13 17 20 29 36 43 ns nC A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initialTJ=25C.Maximum avalanche current limited by tester capability. D. The RJA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse ratin g. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1: Nov 2010 www.aosmd.com Page 2 of 6 AO4402 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 80 VDS=5V 80 60 ID(A) ID (A) 60 40 40 125C 20 0 0 0 1 2 3 4 0.5 5 10 1.5 2 2.5 Normalized On-Resistance 1.4 8 VGS=2.5V RDS(ON) (m ) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 6 4 VGS=4.5V 2 1.2 17 5 2 10 1 0.8 0 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 0 18 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 1.0E+02 10 ID=20A 9 1.0E+01 40 1.0E+00 8 7 IS (A) RDS(ON) (m ) 25C 20 125C 1.0E-01 6 1.0E-02 5 1.0E-03 1.0E-04 4 25C 1.0E-05 3 0 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 1: Nov 2010 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AO4402 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 7000 10 Capacitance (pF) VGS (Volts) 6000 VDS=10V ID=20A 8 6 4 2 5000 4000 3000 2000 Coss 1000 Crss 0 0 0 0 20 40 60 80 Qg (nC) Figure 7: Gate-Charge Characteristics 100 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 1000.0 100.0 ID (Amps) IAR (A) Peak Avalanche Current 5 100.0 10.0 1.0 10ms 0.1 0.0 10.0 0.01 1 10 100 1000 s) Time in avalanche, tA ( Figure 9: Single Pulse Avalanche capability (Note C) 0.1 1 10 100 VDS (Volts) 10000 TA=25C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F) Rev 1: Nov 2010 www.aosmd.com Page 4 of 6 AO4402 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Z JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RJA=75C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) Rev 1: Nov 2010 www.aosmd.com Page 5 of 6 AO4402 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 1: Nov 2010 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6