Schnelle PIN-Fotodiode High Speed PIN Photodiode Lead (Pb) Free Product - RoHS Compliant SFH 2332 Wesentliche Merkmale Features * Speziell geeignet fur Anwendungen von 350nm bis 780nm * Sehr kurze Schaltzeit im spezifizierten Wellenlangenbereich * Sehr kurze Schaltzeiten bei geringer Sperrspannung (<5V) * Extrem kurze Abklingzeit (slow tail") * 3 mm Plastikbauform im LED-Gehause * Especially suitable for applications from 350nm to 780nm * Fast switching time within the specified wavelength * Fast switching time at low reverse voltage (<5V) * Ultra short decay time (slow tail") * 3 mm LED plastic package Anwendungen Applications * * * * * * * * * * Optische Laufwerke (CD, DVD, BluRay) Lichtschranken fur Gleich- und Wechselbetrieb Industrieelektronik Messen/Steuern/Regeln" Abstandsmesser Typ Type Bestellnummer Ordering Code SFH 2332 Q65110A6342 2008-05-25 1 Optical Disc Drives (CD, DVD, BluRay) Photointerrupters Industrial electronics For control and drive circuits Range Finder SFH 2332 Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg - 40 ... + 100 C Sperrspannung Reverse voltage VR 15 V Sperrspannung, t < 120 s Reverse voltage VR 20 V Verlustleistung Total power dissipation Ptot 150 mW 2 kV Elektrostatische Entladung ESD Electrostatic Discharge Human Body Model according to EOS/ESD-5.1-1993 Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Symbol Symbol Wert Value min Spektrale Fotoempfindlichkeit des Chips Spectral sensitivity of the chip = 405nm = 650nm = 780nm S Fotostrom, VR = 5 V, Ee = 0.5 mW/cm2 Photocurrent = 405nm = 650nm = 780nm IP Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity S max Spektraler Bereich der Fotoempfindlichkeit Spectral range of sensitivity, S = 10% of Smax typ Einheit Unit max A/W 0.26 0.49 0.54 A 4.5 7.6 8.5 780 350 nm 1050 nm Abmessung der bestrahlungsempfindlichen Flache L x B Dimensions of radiant sensitive area LxW 0.6 x 0.6 mm x mm Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface 2.4 ... 2.8 mm 2008-05-25 H 2 SFH 2332 Kennwerte (TA = 25 C) Characteristics (cont'd) Bezeichnung Parameter Symbol Symbol Wert Value min typ Halbwinkel Half angle 17 Dunkelstrom, VR = 5V Dark current IR 0.05 Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent, 10% - 90% VR = 5V; RL = 50 ; Ip = 1 mA; = 405nm = 650nm = 780 nm; Einheit Unit max Grad deg. 5 nA t r , tf ns 1.5 1.6 1.8 5 5 5 C0 4.5 5 Temperaturkoeffizient von S Temperature coefficient of S = 405 nm = 650 nm = 780 nm TCI -0.06 0.00 0.01 %/K %/K %/K Rauschaquivalente Strahlungsleistung1) Noise equivalent power, = 650 nm NEP 8.2x10-15 W -----------Hz Kapazitat, f = 1 MHz, E = 0, VR = 0 V; Capacitance 1) - 15 NEP = 17,9 x10 2008-05-25 IR x --------S 3 pF SFH 2332 Relative Spectral Sensitivity Srel = f () Capacitance C = f (VR), E = 0 OHF03041 100 Srel % C Switching Time tr,tf = f (VR) OHF03042 5.0 pF tr , tf OHF03917 8 ns 7 80 4.0 70 3.5 6 60 3.0 5 50 2.5 40 2.0 30 1.5 20 1.0 10 0.5 4 3 0 400 500 600 700 800 900 nm 1100 0 -3 10 2 1 10 -2 10 -1 10 0 VR Dark Current IR = f (VR), E = 0 IR Total Power Dissipation Ptot = f (TA) OHF03043 10 0 nA 10 -1 5 10 -2 5 10 -3 0 5 10 V 15 VR Directional Characteristics Srel = f () 2008-05-25 10 1 V 10 2 4 0 0 2 4 6 8 10 12 V 16 VR SFH 2332 Mazeichnung Package Outlines Collector (Transistor) Cathode (Diode) o3.1 (0.122) o2.9 (0.114) 0.7 (0.028) 0.4 (0.016) 0.8 (0.031) 0.4 (0.016) 2.54 (0.100) spacing Area not flat 5.2 (0.205) 4.5 (0.177) 4.1 (0.161) 3.9 (0.154) 0.6 (0.024) 0.4 (0.016) 4.0 (0.157) 3.6 (0.142) 3.5 (0.138) 1.8 (0.071) 1.2 (0.047) 29 (1.142) 27 (1.063) Chip position 6.3 (0.248) 5.9 (0.232) GEOY6653 Mae in mm (inch) / Dimensions in mm (inch). Empfohlenes Lotpaddesign Recommended Solder Pad Wellenloten (TTW) TTW Soldering 4.8 (0.189) area to improve power dissipation 4 (0.157) OHLPY985 cathode soldering area Mae in mm (inch) / Dimensions in mm (inch). 2008-05-25 5 SFH 2332 Lotbedingungen Soldering Conditions Wellenloten TTW TTW Soldering (nach CECC 00802) (acc. to CECC 00802) OHLY0598 300 C T 10 s 250 Normalkurve standard curve 235 C ... 260 C Grenzkurven limit curves 2. Welle 2. wave 200 1. Welle 1. wave 150 ca 200 K/s 2 K/s 5 K/s 100 C ... 130 C 100 2 K/s 50 Zwangskuhlung forced cooling 0 0 50 100 150 200 s 250 t Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com (c) All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2008-05-25 6