SFH 2332
Schnelle PIN-Fotodiode
High Speed PIN Photodiode
Lead (Pb) Free Product - RoHS Compliant
2008-05-25 1
Wesentliche Merkmale
• Speziell geeignet für Anwendungen von 350nm
bis 780nm
• Sehr kurze Schaltzeit im spezifiz ierten
Wellenlängenbereich
• Sehr kurze Schaltzeiten bei geringer
Sperrspannung (<5V)
• Extrem kurze Abklingzeit („slow tail“)
• 3 mm Plastikbauform im LED-Gehäuse
Anwendungen
• Optische Laufwerke (CD, DVD, BluRay)
• Lichtschranken für Gleich- und Wechselbetrieb
• Industrieelektronik
• „Messen/Steuern/Regeln“
• Abstandsmesser
Typ
Type Bestellnummer
Ordering Code
SFH 2332 Q65110A6342
Features
• Especially suitable for applications from 350nm
to 780nm
• Fast switching time within the specified
wavelength
• Fast switching time at low reverse voltage
(<5V)
• Ultra short decay time („slow tail“)
• 3 mm LED plastic package
Applications
• Optical Disc Drives (CD, DVD, BluRay)
• Photointerrupters
• Industrial electronics
• For control and drive circuits
• Range Finder
2008-05-25 2
SFH 2332
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg – 40 … + 100 °C
Sperrspannung
Reverse voltage VR15 V
Sperrspannung, t < 120 s
Reverse voltage VR20 V
Verlustleistung
Total power dissipation Ptot 150 mW
Elektrostatische Entladung
Electrostatic Discharge
Human Body Model according to EOS/ESD-5.1-1993
ESD 2 kV
Kennwerte (TA = 25 °C)
Characteristics
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
min typ max
Spektrale Fotoempfindlichkeit des Chips
Spectral sensitivity of the chip
λ = 405nm
λ = 650nm
λ = 780nm
Sλ
0.26
0.49
0.54
A/W
Fotostrom, VR = 5 V, Ee = 0.5 mW/cm2
Photocurrent
λ = 405nm
λ = 650nm
λ = 780nm
IP
4.5
7.6
8.5
μA
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity λS max 780 nm
Spektraler Bereich der Fotoempfindlichkeit
Spectr al range of sensitivity, S = 10% of Smax
λ350 1050 nm
Abmessung der bestrahlungsempfindlichen Fläche
Dimensions of radiant sensitive area L × B
L × W0.6 × 0.6 mm × mm
Abstand Chipoberfläche zu Gehäuseoberfläche
Distance chip front to case surface H2.4 … 2.8 mm
SFH 2332
2008-05-25 3
Halbwinkel
Half angle ϕ ± 17 Grad
deg.
Dunkelstrom, VR = 5V
Dark current IR 0.05 5nA
Anstiegs- und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent, 10% - 90%
VR = 5V; RL = 50 Ω; Ip = 1 mA;
λ = 405nm
λ = 650nm
λ = 780 nm;
tr, tf
1.5
1.6
1.8
5
5
5
ns
Kapazität, f = 1 MHz, E = 0, VR = 0 V;
Capacitance C04.5 5pF
Temperaturkoeffizient von Sλ
Temperature coefficient of Sλ
λ = 405 nm
λ = 650 nm
λ = 780 nm
TCI
-0.06
0.00
0.01
%/K
%/K
%/K
Rauschäquivalente Strahlungsleistung1)
Noise equivalent power, λ = 650 nm NEP 8.2×10-15
1)
Kennwerte (TA = 25 °C)
Characteristics (cont’d)
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
min typ max
W
Hz
------------
NEP 17,9 15–
×10 IR
Sλ
---------
×=
SFH 2332
2008-05-25 4
Relative Spectral Sensitivity
Srel = f (λ)
Dark Current
IR = f (VR), E = 0
Directional Characteristics
Srel = f (ϕ)
400
0nm
%
OHF03041
20
40
60
80
100
λ
500 600 700 800 900 1100
10
30
50
70
rel
S
V
OHF03043
R
R
I
-2
10
0
10
-1
10
0
V
nA
5 10 15
10
-3
5
5
Capacitance
C = f (VR), E = 0
Total Power Dissipation
Ptot = f (TA)
OHF03042
0
R
V
-3
10
-2
10
-1
10
0
10
1
10
2
10V
pF
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
C
Switching Time
tr,tf = f (VR)
OHF03917
V
R
r
t
ns
0V
0
,
f
t
2 4 6 8 10 12 16
1
2
3
4
5
6
7
8
SFH 2332
2008-05-25 5
Maßzeichnung
Package Outlines
Maße in mm (inch) / Dimensions in mm (inch).
Empfohlenes Lötpaddesign Wellenlöten (TTW)
Recommended Solder Pad TTW Soldering
Maße in mm (inch) / Dimensions in mm (inch).
0.6 (0.024)
0.4 (0.016)
4.0 (0.157)
3.6 (0.142)
ø3.1 (0.122)
ø2.9 (0.114)
4.1 (0.161)
3.9 (0.154)
5.2 (0.205)
4.5 (0.177)
3.5 (0.138)
6.3 (0.248)
5.9 (0.232)
1.8 (0.071)
1.2 (0.047)
29 (1.142)
27 (1.063)
2.54 (0.100)
spacing
0.7 (0.028)
0.4 (0.016)
Chip position
Collector (Transistor)
Area not flat
GEOY6653
0.4 (0.016)
0.8 (0.031)
Cathode (Diode)
4 (0.157)
OHLPY985
4.8 (0.189)
cathode soldering area
area to improve power dissipation
2008-05-25 6
SFH 2332
Lötbedingungen
Soldering Conditions
Wellenlöten TTW (nach CECC 00802)
TTW Soldering (acc. to CECC 00802)
Published by
OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
© All Rights Reserved.
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-supp ort devices or systems 2 with the express written approval of OSRAM OS.
1 A critical componen t is a component usedin a life-support device or syste m whose failure can reasonably be expected
to cause the failure of that life-support devic e or system, or to a ffect its safety or e ffectiveness of that device or system.
2 Life support devices or syste ms are intended (a) to be implanted in the human body, o r (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the he alth of the user may be endangered.
OHLY0598
0
050 100 150 200 250
50
100
150
200
250
300
T
t
C
s
235 C
10 s
C... 260
1. Welle
1. wave
2. Welle
2. wave
5 K/s 2 K/s
ca 200 K/s
CC... 130100
2 K/s Zwangskühlung
forced cooling
Normalkurve
standard curve
Grenzkurven
limit curves
