Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement BVDSS 75V
▼ Lower On-resistance RDS(ON) 4.5mΩ
▼ Fast Switching Characteristic ID120A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TC=25℃A
ID@TC=25℃A
ID@TC=100℃A
IDM A
PD@TC=25℃W
TSTG ℃
TJ℃
Symbol Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 0.5 ℃/W
Rthj-a 40 ℃/W
Data and specifications subject to change without notice
-55 to 175
Operating Junction Temperature Range
Pulsed Drain Current1480
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation 300
Continuous Drain Current, VGS @ 10V3120
Continuous Drain Current (Chip)
Continuous Drain Current, VGS @ 10V3120
Drain-Source Voltage 75
Gate-Source Voltage +20
200907092
1
AP96T07GS-HF
Halogen-Free Product
-55 to 175
175
Maximum Thermal Resistance, Junction-ambient (PCB mount)4
Parameter Rating
G
D
S
A
dvanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for switching power
applications.
GDSTO-263(S)
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 75 - - V
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=40A - - 4.5 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V
gfs Forward Transconductance VDS=10V, ID=40A - 90 - S
IDSS Drain-Source Leakage Current VDS=75V, VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA
QgTotal Gate Charge2ID=40A - 92 150 nC
Qgs Gate-Source Charge VDS=60V - 16 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 48 - nC
td(on) Turn-on Delay Time2VDS=40V - 18 - ns
trRise Time ID=40A - 90 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 40 - ns
tfFall Time RD=1Ω-80-ns
Ciss Input Capacitance VGS=0V - 3500 5600 pF
Coss Output Capacitance VDS=25V - 1000 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 270 - pF
RgGate Resistance f=1.0MHz - 1.4 2.1 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=40A, VGS=0V - - 1.3 V
trr Reverse Recovery Time2IS=10A, VGS=0V - 70 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 180 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 120A.
4.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP96T07GS-HF
A
P96T07GS-HF
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0
50
100
150
200
250
300
0246810
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=25oC10V
8.0V
7.0V
6.0V
VGS =5.0V
0
40
80
120
160
02468
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=175oC10V
8.0V
7.0V
6.0V
VGS =5.0V
0.4
0.8
1.2
1.6
2.0
2.4
-50 0 50 100 150 200
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=40A
VG=10V
0
10
20
30
40
0 0.2 0.4 0.6 0.8 1 1.2
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oCTj=175oC
0.0
0.4
0.8
1.2
1.6
-50 0 50 100 150 200
Tj , Junction Temperature ( oC)
Normalized VGS(th) (V)
2
3
4
5
6
7
8
45678910
VGS Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
ID=30A
TC=25oC
AP96T07GS-HF
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
0
2
4
6
8
10
12
0 20 40 60 80 100 120
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
VDS =40V
VDS =45V
V DS =60V
ID=40A
Q
VG
10V
QGS QGD
QG
Charge
0
1000
2000
3000
4000
5000
1 5 9 13 17 21 25 29
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coxx
Crss
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
1
10
100
1000
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
ID (A)
Tc=25oC
S
in
g
le Puls
e
100us
1ms
10ms
100ms
DC
td(on) trtd(off) tf
VDS
VGS
10%
90%
Operation in this area
limited by RDS(ON)
