BCP 54, BCP 55, BCP 56 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren fur die Oberflachenmontage NPN Power dissipation - Verlustleistung 0.2 6.5 0.1 3 1.65 0.7 2.3 2 0.2 3.5 0.3 7 1 1.3 W Plastic case Kunststoffgehause 4 3 3.25 Dimensions / Mae in mm 1 = B 2, 4 = C 3 = E NPN SOT-223 Weight approx. - Gewicht ca. 0.04 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C) BCP 54 BCP 55 BCP 56 Collector-Emitter-voltage B open VCE0 45 V 60 V 80 V Collector-Base-voltage E open VCB0 45 V 60 V 100 V Emitter-Base-voltage C open VEB0 5V Power dissipation - Verlustleistung Ptot 1.3 W 1) Collector current - Kollektorstrom (DC) IC 1A Peak Collector current - Koll.-Spitzenstrom ICM 1.5 A Peak Base current - Basis-Spitzenstrom IBM 200 mA Junction temp. - Sperrschichttemperatur Tj 150/C Storage temperature - Lagerungstemperatur TS - 65...+ 150/C Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. Collector-Base cutoff current - Kollektorreststrom IE = 0, VCB = 30 V ICB0 - - 100 nA IE = 0, VCB = 30 V, Tj = 125/C ICB0 - - 10 :A IEB0 - - 100 nA - - 500 mV Emitter-Base cutoff current - Emitterreststrom IC = 0, VEB = 5 V Collector saturation volt. - Kollektor-Sattigungsspg. 2) IC = 500 mA, IB = 50 mA 1 VCEsat ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% 26 01.11.2003 General Purpose Transistors BCP 54, BCP 55, BCP 56 Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. DC current gain - Kollektor-Basis-Stromverhaltnis 1) VCE = 2 V, IC = 150 mA VCE = 2 V, IC = 5 mA VCE = 2 V, IC = 500 mA BCP 5x-6 hFE 40 - 100 BCP 5x-10 hFE 63 - 160 BCP 5x-16 hFE 100 - 250 hFE BCP 54... BCP56 hFE 63 - - 40 - - VBEon - - 1V fT - 130 MHz - hFE1'hFE2 - - 1.6 Base-Emitter voltage - Basis-Emitter-Spannung 1) VCE = 2 V, IC = 500 mA Gain-Bandwidth Product - Transitfrequenz VCE = 5 V, IC = 10 mA, f = 100 MHz DC current gain ratio of the complement. pairs Verhaltnis der Stromverst. complement. Paare Thermal resistance - Warmewiderstand junction to ambient air - Sperrschicht zu umgebender Luft RthA 95 K/W 2) junction to soldering point - Sperrschicht zu Lotpad RthS 14 K/W Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren BCP 51, BCP 52, BCP 53 ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003 1 2 27