1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
26 01.11.2003
4
3
2
1
3
±0.1
6.5
±0.2
0.7
3.25 2.3
7
±0.3
1.65
3.5
±0.2
BCP 54, BCP 55, BCP 56 General Purpose Transistors
NPN Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN
Power dissipation – Verlustleistung 1.3 W
Plastic case SOT-223
Kunststoffgehäuse
Weight approx. – Gewicht ca. 0.04 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dimensions / Maße in mm
1 = B 2, 4 = C 3 = E
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C)
BCP 54 BCP 55 BCP 56
Collector-Emitter-voltage B open VCE0 45 V 60 V 80 V
Collector-Base-voltage E open VCB0 45 V 60 V 100 V
Emitter-Base-voltage C open VEB0 5 V
Power dissipation – Verlustleistung Ptot 1.3 W 1)
Collector current – Kollektorstrom (DC) IC1 A
Peak Collector current – Koll.-Spitzenstrom ICM 1.5 A
Peak Base current – Basis-Spitzenstrom IBM 200 mA
Junction temp. – Sperrschichttemperatur Tj150/C
Storage temperature – Lagerungstemperatur TS- 65…+ 150/C
Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C)
Min. Typ. Max.
Collector-Base cutoff current – Kollektorreststrom
IE = 0, VCB = 30 V ICB0 – – 100 nA
IE = 0, VCB = 30 V, Tj = 125/CI
CB0 – – 10 :A
Emitter-Base cutoff current – Emitterreststrom
IC = 0, VEB = 5 V IEB0 – – 100 nA
Collector saturation volt. – Kollektor-Sättigungsspg. 2)
IC = 500 mA, IB = 50 mA VCEsat – – 500 mV
1) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
2) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
27
01.11.2003
General Purpose Transistors BCP 54, BCP 55, BCP 56
Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C)
Min. Typ. Max.
DC current gain – Kollektor-Basis-Stromverhältnis 1)
VCE = 2 V, IC = 150 mA
BCP 5x-6 hFE 40 – 100
BCP 5x-10 hFE 63 – 160
BCP 5x-16 hFE 100 – 250
VCE = 2 V, IC = 5 mA BCP 54...
BCP56
hFE 63 – –
VCE = 2 V, IC = 500 mA hFE 40 – –
Base-Emitter voltage – Basis-Emitter-Spannung 1)
VCE = 2 V, IC = 500 mA VBEon – – 1 V
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 10 mA, f = 100 MHz fT– 130 MHz –
DC current gain ratio of the complement. pairs
Verhältnis der Stromverst. complement. Paare hFE1'hFE2 – – 1.6
Thermal resistance – Wärmewiderstand
junction to ambient air – Sperrschicht zu umgebender Luft RthA 95 K/W 2)
junction to soldering point – Sperrschicht zu Lötpad RthS 14 K/W
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren BCP 51, BCP 52, BCP 53
