Data Sheet, V 2.0, February 2009
TLE4966L
High Precision Hall-Effect Switch with
Direction Detection
Sensors
Edition 2009-02
Published by
Infineon Technologies AG
81726 München, Germany
© 2007 Infineon Technologies AG
All Rights Reserved.
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TLE4966L
Revision History: 2009-02 V 2.0
Previous Version: V 1.2
Page Subjects (major changes since last revision)
TLE4966H removed
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TLE4966L
Data Sheet 4 V 2.0, 2009-02
1Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
1.1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
1.2 Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
1.3 Pin Configuration (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2 General . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.1 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.2 Circuit Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Operating Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Electrical and Magnetic Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Field Direction Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6 Timing Diagrams for the Speed and Direction Outputs . . . . . . . . . . . . 12
7 Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
7.1 Package Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
7.2 Distance between Chip and Package Surface . . . . . . . . . . . . . . . . . . . . . 14
7.3 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Type Package
TLE4966L PG-SSO-4-1
High Precision Hall-Effect Switch with Direction
Detection
TLE4966L
Data Sheet 5 V 2.0, 2009-02
1Overview
1.1 Features
2.7 V to 24 V supply voltage operation
Operation from unregulated power supply
High sensitivity and high stability
of the magnetic switching points
High resistance to mechanical stress
by Active Error Compensation
Reverse battery protection (-18 V)
Superior temperature stability
Peak temperatures up to 195°C without damage
Low jitter (typ. 1 µs)
Digital output signals
Bipolar version
Excellent matching between the 2 Hall probes
Hall plate distance 1.45 mm
Direction & speed information
Direction signal switches before the speed signal
1.2 Functional Description
The TLE4966L is an integrated circuit double Hall-effect sensor designed specifically for
highly accurate applications. Precise magnetic switching points and high temperature
stability are achieved by active compensation circuits and chopper techniques on chip.
The IC provides a speed signal at Q2 for every magnetic pole pair and a direction
information at Q1, which is provided before the speed signal.
TLE4966L
Overview
Data Sheet 6 V 2.0, 2009-02
1.3 Pin Configuration (top view)
1234
PG-SSO-4-1
1.45
Center of
Sensitive Area
± 0. 1
1.53
± 0 .1
2.67
speeddir ection
Figure 1 Pin Definition and Center of Sensitive Area
Table 1 Pin Definitions and Functions
Pin No. Symbol Function
1VSSupply voltage
2Q1 Direction
3Q2 Speed
4GND Ground
TLE4966L
General
Data Sheet 7 V 2.0, 2009-02
2 General
2.1 Block Diagram
Voltage Regulator
(reverse polarity protected)
Oscillator
& Sequencer
Bias and
Compensation
Circuits
Filter
Filter
Amplifier
Amplifier
Direction
Detection
Chopped
Hall
Probe
ESD
V
S
Q2
Comparator
with
Hysteresis Q1
GND
Chopped
Hall
Probe
Figure 2 Block Diagram
2.2 Circuit Description
The chopped Double Hall Switch comprises two Hall probes, bias generator,
compensation circuits, oscillator, and output transistors.
The bias generator provides currents for the Hall probes and the active circuits.
Compensation circuits stabilize the temperature behavior and reduce technology variations.
The Active Error Compensation rejects offsets in signal stages and the influence of
mechanical stress to the Hall probes caused by molding and soldering processes and
other thermal stresses in the package. This chopper technique together with the threshold
generator and the comparator ensures high accurate magnetic switching points.
TLE4966L
Maximum Ratings
Data Sheet 8 V 2.0, 2009-02
3 Maximum Ratings
Table 2 Absolute Maximum Ratings
Tj = -40°C to 150°C
Parameter Symbol Limit Values Unit Conditions
min. max.
Supply voltage VS-18
-18
-18
18
24
26
V
for 1 h, RS 200
for 5 min, RS 200
Supply current
through
protection device
IS-50 50 mA
Output voltage VQ-0.7
-0.7
18
26
V
for 5 min @ 1.2 k
pull up
Continuous
output current
IQ-50 50 mA
Junction
temperature
Tj
155
165
175
195
°C
for 2000 h (not additive)
for 1000 h (not additive)
for 168 h (not additive)
for 3 x 1 h (additive)
Storage
temperature
TS-40 150 °C
Magnetic flux
density
Bunlimited mT
Note: Stresses above those listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Table 3 ESD Protection 1)
1) Human Body Model (HBM) tests according to: EOS/ESD Association Standard S5.1-1993 and
Mil. Std. 883D method 3015.7
Parameter Symbol Limit Values Unit Notes
min. max.
ESD voltage VESD ±4 kV HBM, R = 1.5 k,
C = 100 pF
TA = 25°C
TLE4966L
Operating Range
Data Sheet 9 V 2.0, 2009-02
4 Operating Range
Table 4 Operating Range
Parameter Symbol Limit Values Unit Conditions
min. typ. max.
Supply voltage VS2.7
18
24
26
V
1 h with RS 200
for 5 min RS 200
Output voltage VQ-0.7 18 V
Junction
temperature
Tj-40
150
175
°C
for 168 h
Output current IQ0 10 mA
TLE4966L
Electrical and Magnetic Parameters
Data Sheet 10 V 2.0, 2009-02
5 Electrical and Magnetic Parameters
Table 5 Electrical Characteristics 1)
1) over operating range, unless otherwise specified. Typical values correspond to VS = 12 V and TA = 25°C
Parameter Symbol Limit Values Unit Conditions
min. typ. max.
Supply current IS45.2 7mA VS = 2.7 V ... 18 V
Reverse current ISR 00.2 1mA VS = -18 V
Output saturation
voltage
VQSAT 0.3 0.6 VIQ = 10 mA
Output leakage
current
IQLEAK 0.05 10 µA for VQ = 18 V
Output fall time tf0.2 1µs
R
L
= 1.2 k
;
C
L
< 50 pF
see:
Figure 3
on
Page 12
Output rise time tr0.2 1µs
Chopper frequency fOSC 320 kHz
Switching frequency fSW 0 15
2) To operate the sensor at the max. switching frequency, the magnetic signal amplitude must be 1.4 times
higher than for static fields. This is due to the -3 dB corner frequency of the low pass filter in the signal path.
2) kHz
Delay time
3) Systematic delay between magnetic threshold reached and output switching
3) td13 µs
Count Signal Delay tdc 50 200 1000 ns
Output jitter
4) Jitter is the unpredictable deviation of the output switching delay
4) tQJ –1 µsRMS Typ. value for square-
wave signal 1 kHz
Repeatability of
magnetic thresholds
5) BREP is equivalent to the noise constant
5)
BREP 40 µTRMS Typ. value for
B/t > 12 mT/ms
Power-on time
6) Time from applying VS 2.7 V to the sensor until the output state is valid
6) tPON 13 µsVS 2.7 V
Distance of hall plates dHALL 1.45 mm
Thermal resistance
7) Thermal resistance from junction to ambient
7) RthJA –- -–190 K/W PG-SSO-4-1
Calculation of the ambient temperature:
e.g. for VS = 12.0 V, IStyp = 5.5 mA, VQSATtyp = 0.3 V and 2 x IQ = 10 mA :
Power Dissipation: PDIS = 72.0 mW.
In TA = Tj – (RthJA × PDIS) = 175°C – (190 K/W × 0.072 W)
Resulting max. ambient temperature: TA = 161.3°C
Table 6 Magnetic Characteristics 1).
1) over operating range, unless otherwise specified. Typical values correspond to VS = 12 V
Parameter Symbol Tj [°C] Limit Values Unit Conditions
min. typ. max.
Operate point BOP -40
25
150
5.2
5.0
4.7
7.7
7.5
7.1
10.3
10.0
9.5
mT
Release point BRP -40
25
150
-10.3
-10.0
-9.5
-7.7
-7.5
-7.1
-5.2
-5.0
-4.7
mT
Hysteresis BHYS -40
25
150
10.0
15.0
20.0
mT
Magnetic
matching BMATCH -40
25
150
-2.0
0
2.0
mT Valid for
BOP1 - BOP2
and
BRP1 - BRP2
Magnetic offset BOFF -40
25
150
-2.0
0
2.0
mT (BOP + BRP)/2
Temperature
compensation of
magnetic
thresholds
TC -350
ppm/°C
TLE4966L
Electrical and Magnetic Parameters
Data Sheet 11 V 2.0, 2009-02
Note: Typical characteristics specify mean values expected over the production spread.
Field Direction Definition
Positive magnetic fields related with south pole of magnet to the branded side of
package.
TLE4966L
Timing Diagrams for the Speed and Direction Outputs
Data Sheet 12 V 2.0, 2009-02
6 Timing Diagrams for the Speed and Direction
Outputs
Applied Magnetic Field
90%
10%
VQ
tf
td
tr
td
BOP
BRP
Figure 3 Timing Definition of the Speed Signal
t
dc
Speed
Direction
t
dc
t
Change of Direction
Figure 4 Timing Definition of the Direction Signal
N
N
N
N
N
N
S
S
S
S
S
S
Rotation
Direction
TLE4966
Branded Side of
IC
TLE4966L
Timing Diagrams for the Speed and Direction Outputs
Data Sheet 13 V 2.0, 2009-02
Figure 5 Definition of the Direction Signal
Rotation Direction State of Direction Output VQ1
Left to right Low
Right to left High
TLE4966L
Package Information
Data Sheet 14 V 2.0, 2009-02
7 Package Information
7.1 Package Marking
Figure 6 Marking PG-SSO-4-1
Year (yy) = 00 ... 99
Calendar Week (ww) = 01 ... 52
yyww
4966B
S
AEP03646
Figure 7 Marking
7.2 Distance between Chip and Package Surface
AEA03255
Branded Side
d
d: Distance to Upper Side of IC
P-SSO-4-1: ±0.1
0.3 mm
Figure 8 Distance Chip to Upper Side of IC
TLE4966L
Package Information
Data Sheet 15 V 2.0, 2009-02
7.3 Package Outlines
Figure 9 PG-SSO-4-1
6.35
±0.4
12.7
±0.3
±0.3
4
1
x
45˚
12.7
±1 -0.1
1
0.25
±0.05
0.2
+0.1
Adhesive
±0.5
61
-1
±0.5
18
Tape
0.39
±0.1
-0.15
0.25
9
±0.5
23.8
+0.75
-0.5
38 MAX.
1 MAX.
3.38
3.71
(0.25)
±0.08
±0.06
1.9 MAX.
5.16
±0.08
5.34
±0.05
0.1 MAX.
(14.8)
1)
1.27 1.27 3.81=3
x
2 A
A
1) No solder function area
Total tolerance at 10 pitches ±1
(Useable Length)
Tape
±1˚
14
0.2
±0.05
0.4
0.6 MAX.
4x 0.5
CODE CODE CODE
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