4-174
Up to 6 GHz Medium Power
Silicon Bipolar Transistor
Technical Data
Features
• High Output Power:
20.5 dBm Typical P1 dB at 2.0␣ GHz
• High Gain at 1 dB
Compression:
13.5 dB Typical
G
1 dB
at 2.0␣ GHz
• Low Noise Figure:
1.9 dB Typical
NF
O
at 2.0␣ GHz
• High Gain-Bandwidth
Product: 8.0 GHz Typical fT
• Surface Mount Plastic
Package
• Tape-and-Reel Packaging
Option Available[1]
AT-42086
86 Plastic Package
Note:
1. Refer to PACKAGING section “Tape-
and-Reel Packaging for Semiconductor
Devices.”
Description
Hewlett-Packard’s AT-42086 is a
general purpose NPN bipolar
transistor that offers excellent
high frequency performance. The
AT-42086 is housed in a low cost
surface mount .085" diameter
1
4
3
2
EMITTER
BASE
EMITTER
COLLECTOR
Pin Connections
plastic package. The 4 micron
emitter-to-emitter pitch enables
this transistor to be used in many
different functions. The 20 emitter
finger interdigitated geometry
yields a medium sized transistor
with impedances that are easy to
match for low noise and medium
power applications. Applications
include use in wireless systems as
an LNA, gain stage, buffer, oscilla-
tor, and mixer. An optimum noise
match near 50␣ Ω up to 1 GHz,
makes this device easy to use as a
low noise amplifier.
The AT-42086 bipolar transistor is
fabricated using Hewlett- Packard’s
10 GHz f
T
Self-Aligned-Transistor
(SAT) process. The die is nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
5965-8914E
420
4-175
AT-42086 Absolute Maximum Ratings
Absolute
Symbol Parameter Units Maximum[1]
VEBO Emitter-Base Voltage V 1.5
VCBO Collector-Base Voltage V 20
VCEO Collector-Emitter Voltage V 12
ICCollector Current mA 80
PTPower Dissipation[2,3] mW 500
TjJunction Temperature °C 150
TSTG Storage Temperature °C -65 to 150
Thermal Resistance[2,4]:
θjc = 140°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 7.1 mW/°C for TC > 80°C.
4. See MEASUREMENTS section
“Thermal Resistance” for more
information.
Electrical Specifications, TA = 25°C
Symbol Parameters and Test Conditions Units Min. Typ. Max.
|S21E|2Insertion Power Gain; VCE = 8 V, IC = 35 mA f = 1.0 GHz dB 15.0 16.5
f = 2.0 GHz 10.5
f = 4.0 GHz 4.5
P1 dB Power Output @ 1 dB Gain Compression f = 2.0 GHz dBm 20.5
VCE = 8 V, IC = 35 mA f= 4.0 GHz 20.0
G1 dB 1 dB Compressed Gain; VCE = 8 V, IC = 35 mA f = 2.0 GHz dB 13.5
f = 4.0 GHz 9.0
NFOOptimum Noise Figure: VCE = 8 V, IC = 10 mA f = 2.0 GHz dB 1.9
f = 4.0 GHz 3.5
GAGain @ NFO; VCE = 8 V, IC = 10 mA f = 2.0 GHz dB 13.0
f = 4.0 GHz 9.0
fTGain Bandwidth Product: VCE = 8 V, IC = 35 mA GHz 8.0
hFE Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA — 30 150 270
ICBO Collector Cutoff Current; VCB = 8 V µA 0.2
IEBO Emitter Cutoff Current; VEB = 1 V µA 2.0
CCB Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz pF 0.32
Note:
1. For this test, the emitter is grounded.
Part Number Ordering Information
Part Number Increment Comments
AT-42086-BLK 100 Bulk
AT-42086-TR1 1000 Reel
Note: For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
4-176
AT-42086 Typical Performance, TA = 25°C
FREQUENCY (GHz)
Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
V
CE
= 8 V, I
C
= 35 mA.
GAIN (dB)
0.1 0.50.3 1.0 3.0 6.0
I
C
(mA)
Figure 1. Output Power and 1 dB
Compressed Gain vs. Collector
Current and Frequency. V
CE
= 8 V.
24
20
16
12
8
4
G
1 dB
(dB) P
1 dB
(dBm)
0 1020304050
P
1dB
G
1dB
2.0 GHz
2.0 GHz
4.0 GHz
4.0 GHz
40
35
30
25
20
15
10
5
0
MSG
MAG
|S
21E
|
2
I
C
(mA)
Figure 2. Insertion Power Gain vs.
Collector Current and Frequency.
V
CE
= 8 V.
20
16
12
8
4
0
|S
21E
|
2
GAIN (dB)
0 1020304050
1.0 GHz
2.0 GHz
4.0 GHz
FREQUENCY (GHz)
Figure 4. Noise Figure and Associated
Gain vs. Frequency.
V
CE
= 8 V, I
C
= 10mA.
GAIN (dB)
24
21
18
15
12
9
6
3
0
4
3
2
1
0
NF
O
(dB)
0.5 2.01.0 3.0 4.0 5.0
G
A
NF
O
4-177
AT-42086 Typical Scattering Parameters,
Common Emitter, ZO = 50 Ω, TA=25°C, VCE =8 V, I
C␣ =␣ 10 mA
Freq. S11 S21 S12 S22
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
0.1 .68 -48 28.0 25.12 153 -36.0 .016 65 .91 -15
0.5 .63 -141 20.9 11.07 102 -29.9 .032 42 .54 -30
1.0 .63 -176 15.4 5.87 80 -27.4 .043 43 .43 -30
1.5 .65 164 12.0 3.98 65 -26.0 .050 46 .40 -34
2.0 .66 151 9.5 2.99 53 -23.9 .064 52 .38 -40
2.5 .69 142 7.8 2.44 45 -23.1 .070 53 .36 -46
3.0 .71 132 6.2 2.04 34 -21.6 .084 54 .34 -54
3.5 .73 123 4.8 1.74 24 -19.7 .104 53 .33 -67
4.0 .75 115 3.6 1.51 14 -18.3 .122 51 .30 -80
4.5 .78 108 2.6 1.34 5 -17.2 .138 50 .31 -94
5.0 .80 101 1.6 1.20 -4 -16.0 .159 46 .31 -110
5.5 .82 95 0.6 1.08 -12 -14.8 .182 40 .32 -129
6.0 .85 89 -0.2 0.97 -21 -14.0 .200 35 .34 -148
AT-42086 Typical Scattering Parameters,
Common Emitter, ZO = 50 Ω, TA=25°C, VCE =8 V, I
C␣ =␣ 35 mA
Freq. S11 S21 S12 S22
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
0.1 .48 -94 32.8 43.62 137 -37.7 .013 65 .77 -25
0.5 .57 -168 22.4 13.21 92 -32.6 .023 57 .39 -28
1.0 .59 168 16.5 6.69 75 -28.7 .037 62 .33 -27
1.5 .61 154 13.0 4.48 62 -24.8 .057 64 .31 -31
2.0 .63 143 10.5 3.36 51 -23.0 .071 61 .29 -37
2.5 .68 137 8.7 2.72 43 -21.0 .089 56 .26 -45
3.0 .68 127 7.0 2.25 33 -19.7 .104 58 .25 -53
3.5 .71 118 5.7 1.92 24 -18.4 .121 55 .24 -65
4.0 .73 111 4.5 1.69 14 -17.3 .136 49 .20 -80
4.5 .76 104 3.5 1.49 5 -15.9 .161 46 .21 -95
5.0 .78 98 2.4 1.32 -3 -15.2 .174 43 .21 -115
5.5 .81 91 1.6 1.20 -12 -14.3 .193 36 .22 -136
6.0 .84 85 0.7 1.08 -20 -13.4 .213 31 .25 -156
A model for this device is available in the DEVICE MODELS section.
AT-42086 Noise Parameters: VCE = 8 V, IC = 10 mA
Freq. NFOΓopt
GHz dB Mag Ang RN/50
0.1 1.0 .04 8 0.13
0.5 1.1 .03 62 0.12
1.0 1.5 .06 168 0.12
2.0 1.9 .25 -146 0.12
4.0 3.5 .58 -100 0.52
4-178
86 Plastic Package Dimensions
4
0.51 ± 0.13
(0.020 ± 0.005)
2.34 ± 0.38
(0.092 ± 0.015)
2.67 ± 0.38
(0.105 ± 0.15)
13
2
2.16 ± 0.13
(0.085 ± 0.005)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
1.52 ± 0.25
(0.060 ± 0.010)
0.66 ± 0.013
(0.026 ± 0.005)
0.203 ± 0.051
(0.006 ± 0.002)
0.30 MIN
(0.012 MIN)
C
L
45°
5° TYP.
8° MAX
0° MIN
