VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 1800 V 325 A 510 A 5000 A 0.89 V 0.850 m Phase Control Thyristor 5STP 03A1800 Doc. No. 5SYA1032-01 Sep. 01 * Designed for traction, energy and industrial applications * Optimum power handling capability Blocking Part Number VDRM 5STP 03A1800 5STP 03A1600 5STP 03A1200 Conditions VRRM VRSM1 1800 V 1600 V 1200 V f = 50 Hz, tp = 10ms 2000 V 1800 V 1400 V tp = 5ms, single pulse IDRM 50 mA VDRM IRRM 50 mA VRRM dV/dtcrit 1000 V/s Exp. to 0.67 x VDRM, Tj = 125C Mechanical data FM a Mounting force nom. 4 kN min. 3.6 kN max. 4.8 kN Acceleration Device unclamped 50 m/s2 Device clamped 100 m/s2 m Weight 0.06 kg DS Surface creepage distance 7 mm Da Air strike distance 6 mm Tj = 125C ABB Semiconductors AG reserves the right to change specifications without notice. 5STP 03A1800 On-state ITAVM Max. average on-state current 325 A ITRMS Max. RMS on-state current 510 A ITSM Max. peak non-repetitive 5000 A surge current 5400 A 2 It Limiting load integral Half sine wave, TC = 70C tp = 10 ms Tj = 125C tp = 8.3 ms After surge: 2 125 kA s tp = 10 ms VD = VR = 0V 2 121 kA s tp = 8.3 ms VT On-state voltage 1.40 V IT = 600 A VT0 Threshold voltage 0.89 V IT = 200 - 600 A rT Slope resistance 0.850 m IH Holding current 20-70 mA Tj = 25C 15-60 mA Tj = 125C 50-300 mA Tj = 25C 30-275 mA Tj = 125C IL Latching current Tj = 125C Switching di/dtcrit Critical rate of rise of on-state current 150 A/s Cont. f = 50 Hz VD 0.67VDRM , Tj = 125C 300 A/s 60 sec. f = 50Hz ITRM = 600 A IFG = 1.5 A, tr = 0.5 s IFG = 1.5 A, tr = 0.5 s td Delay time 3.0 s VD = 0.4VDRM tq Turn-off time 400 s VD 0.67VDRM ITRM = 600 A, Tj = 125C dvD/dt = 20V/s VR > 200 V, diT/dt = -20 A/s Qrr Recovery charge min 400 As max 1100 As Triggering VGT Gate trigger voltage 2.4 V Tj = 25 IGT Gate trigger current 250 mA Tj = 25 VGD Gate non-trigger voltage 0.3 V VD =0.4 x VDRM IGD Gate non-trigger current 10 mA VD = 0.4 x VDRM VFGM Peak forward gate voltage 12 V IFGM Peak forward gate current 10 A VRGM Peak reverse gate voltage 10 V PG Gate power loss 3W ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1032-01 Sep. 01 page 2 of 5 5STP 03A1800 Thermal Tjmax Max. operating junction temperature range Tstg Storage temperature range RthJC Thermal resistance 130 K/kW Anode side cooled junction to case 160 K/kW Cathode side cooled RthCH 125 C -40...140 C 90 K/kW Double side cooled Thermal resistance case to 80 K/kW Single side cooled heat sink 40 K/kW Double side cooled Analytical function for transient thermal impedance: n ZthJC(t) = a Ri(1 - e -t/ i ) i =1 i 1 2 3 4 Ri(K/kW) 15.6 17.9 18.7 18.2 i(s) 1.4191 0.181 0.1614 0.0941 Fig. 1 Transient thermal impedance junction to case. Fig. 2 On-state characteristics. Fig. 3 On-state characteristics. Tj=125C, 10ms half sine ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1032-01 Sep. 01 page 3 of 5 5STP 03A1800 Fig. 4 On-state power dissipation vs. mean onstate current. Turn - on losses excluded. Fig. 5 Max. permissible case temperature vs. mean on-state current. Fig. 6 Surge on-state current vs. pulse length. Half-sine wave. Fig. 7 Surge on-state current vs. number of pulses. Half-sine wave, 10 ms, 50Hz. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1032-01 Sep. 01 page 4 of 5 5STP 03A1800 Fig. 8 Gate trigger characteristics. Fig. 9 Max. peak gate power loss. Fig. 10 Recovery charge vs. decay rate of onstate current. Fig. 11 Peak reverse recovery current vs. decay rate of on-state current. ABB Semiconductors AG reserves the right to change specifications without notice. ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)62 888 6419 +41 (0)62 888 6306 abbsem@ch.abb.com www.abbsem.com Doc. No. 5SYA1032-01 Sep. 01