ABB Semiconductors AG reserves the right to change specifications without notice.
V
DSM = 1800
V
ITAVM = 325
A
ITRMS = 510
A
ITSM = 5000
A
V
T0 =0.89
V
r
T= 0.850 mΩ
ΩΩ
Ω
Phase Control Thyristor
5STP 03A1800
D
oc
. N
o
.
5S
YA1
03
2-
0
1
Sep
.
0
1
• Designed for traction, energy and industrial applications
• Optimum power handling capability
Blockin
g
Part Number 5STP 03A1800 5STP 03A1600 5STP 03A1200 Conditions
VDRM VRRM 1800 V 1600 V 1200 V f = 50 Hz, tp = 10ms
VRSM1 2000 V 1800 V 1400 V tp = 5ms, single pulse
IDRM ≤ 50 mA VDRM
IRRM ≤ 50 mA VRRM
Tj = 125°C
dV/dtcrit 1000 V/µs Exp. to 0.67 x VDRM, Tj = 125°C
Mechanical data
FMMounting force nom. 4 kN
min. 3.6 kN
max. 4.8 kN
aAcceleration
Device unclamped
Device clamped
50
100
m/s2
m/s2
mWeight 0.06kg
DSSurface creepage distance 7 mm
DaAir strike distance 6 mm
5STP 03A1800
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1032-01 Sep. 01 page 2 of 5
On-state
ITAVM Max. average on-state current 325 A Half sine wave, TC = 70°C
ITRMS Max. RMS on-state current 510 A
ITSM Max. peak non-repetitive 5000 A tp
=
10 ms Tj = 125°C
surge current 5400 A tp
=
8.3 ms After surge:
I2t Limiting load integral 125 kA2stp
=
10 ms VD = VR = 0V
121 kA2stp
=
8.3 ms
VTOn-state voltage 1.40 V IT
=
600 A
VT0 Threshold voltage 0.89 V IT
=
200 - 600 A Tj = 125°C
rTSlope resistance 0.850 mΩ
IHHolding current 20-70 mA T
j
=
25°C
15-60 mA T
j
=
125°C
ILLatching current 50-300 mA T
j
=
25°C
30-275 mA T
j
=
125°C
Switching
di/dtcrit Critical rate of rise of on-state 150 A/µs Cont. f = 50 Hz VD ≤ 0.67⋅VDRM , Tj = 125°C
current 300 A/µs ITRM = 600 A60 sec.
f = 50Hz IFG = 1.5 A, tr = 0.5 µs
tdDelay time ≤3.0 µs VD = 0.4⋅VDRM IFG = 1.5 A, tr = 0.5 µs
tqTurn-off time ≤400 µs VD ≤ 0.67⋅VDRM ITRM = 600 A, Tj = 125°C
dvD/dt = 20V/µs VR > 200 V, diT/dt = -20 A/µs
Qrr Recovery charge min 400 µAs
max 1100 µAs
Triggering
VGT Gate trigger voltage 2.4 V Tj = 25°
IGT Gate trigger current 250 mA Tj = 25°
VGD Gate non-trigger voltage 0.3 V VD =0.4 x VDRM
IGD Gate non-trigger current 10 mA VD = 0.4 x VDRM
VFGM Peak forward gate voltage 12 V
IFGM Peak forward gate current 10 A
VRGM Peak reverse gate voltage 10 V
PGGate power loss 3 W
5STP 03A1800
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1032-01 Sep. 01 page 3 of 5
Thermal
Tjmax Max. operating junction temperature
range
125 °C
Tstg Storage temperature range -40…140 °C
RthJC Thermal resistance 130 K/kW Anode side cooled
junction to case 160 K/kW Cathode side cooled
90 K/kW Double side cooled
RthCH Thermal resistance case to 80 K/kW Single side cooled
heat sink 40 K/kW Double side cooled
Analytical function for transient thermal
impedance:
)e-(1R = (t)Z
n
1i
t/-
ithJC i
å
=
τ
i1234
Ri(K/kW) 15.6 17.9 18.7 18.2
τi(s) 1.4191 0.181 0.1614 0.0941
Fig. 1 Transient thermal impedance junction to case.
Fig. 2 On-state characteristics. Fig. 3 On-state characteristics.
Tj=125°C, 10ms half sine
5STP 03A1800
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1032-01 Sep. 01 page 4 of 5
Fig. 4 On-state power dissipation vs. mean on-
state current. Turn - on losses excluded.
Fig. 5 Max. permissible case temperature vs.
mean on-state current.
Fig. 6 Surge on-state current vs. pulse length.
Half-sine wave.
Fig. 7 Surge on-state current vs. number of
pulses. Half-sine wave, 10 ms, 50Hz.
5STP 03A1800
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB Semiconductors AG Doc. No. 5SYA1032-01 Sep. 01
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)62 888 6419
Fax +41 (0)62 888 6306
Email abbsem@ch.abb.com
Internet www.abbsem.com
Fig. 8 Gate trigger characteristics. Fig. 9 Max. peak gate power loss.
Fig. 10 Recovery charge vs. decay rate of on-
state current.
Fig. 11 Peak reverse recovery current vs. decay
rate of on-state current.
