MJ10012
NPN Silicon Power
Darlington Transistor
Features
• With TO-3 package
Maximum Ratings
Symbol Rating Rating Unit
VCEO Collector-Emitter Voltage 400 V
VCBO Collector-Base Voltage 600 V
VEBO Emitter-Base Voltage 8.0 V
IC Collector Current 10 A
PC Collector power dissipation 175 W
TJ Junction Temperature 200 ℃
TSTG Storage Temperature -65 to +200 ℃
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
VCEO(SUS) Collector-Emitter Breakdown Voltage
(IC=200mAdc, IB=0) 400 --- Vdc
ICBO Collector-Base Cutoff Current
(VCB=600Vdc,IE=0) --- 1.0 mAdc
IEBO Emitter-Base Cutoff Current
(VEB=6.0Vdc, IC=0) --- 40 mAdc
ICEO Collector-emitter Cutoff Current
(VCE=400V; IB=0) --- 1.0 mAdc
ON CHARACTERISTICS
hFE Forward Current Transfer ratio
(IC=3.0Adc, VCE=6.0Vdc)
(IC=6.0Adc, VCE=6.0Vdc)
(IC=10Adc, VCE=6.0Vdc)
300
100
20 2000
VCE(sat) Collector-Emitter Saturation Voltage
(IC=3.0Adc, IB=0.6Adc)
(IC=6.0Adc, IB=0.6Adc)
(IC=10Adc, IB=2.0Adc)
1.5
2.0
2.5
Vdc
VBE(sat) Base-Emitter Saturation Voltage
(IC=6.0Adc, IB=0.6Adc)
(IC=10Adc, IB=2.0Adc) 2.5
3.0
Vdc
DYNAMIC CHARACTERISTICS
Cob Output Capacitance
(Vcb=10Vdc, IE=0, ftest=100kHz) 350 pF
SWITCHING CHARACTERISTICS
ts Storage Time (VCC = 12 Vdc,
IC = 6.0 Adc, IB1 = IB2 = 0.3 Adc) 15 µs
tf Fall Time (VCC = 12 Vdc,
IC = 6.0 Adc, IB1 = IB2 = 0.3 Adc) 15 µs
TO-3
A
N
E
D
C
K
PIN 1. BASE
PIN 2. EMITTER
CASE. COLLECTOR
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A 1.550 REF 39.37 REF
B ----- 1.050 ----- 26.67
C .250 .335 6.35 8.51
D .038 .043 0.97 1.09
E 0.55 0.70 1.40 1.77
G .430 BSC 10.92 BSC
H .215 BSC 5.46 BSC
K .440 .480 11.18 12.19
L .665 BSC 16.89 BSC
N ----- .830 ----- 21.08
Q .151 .165 3.84 4.19 ∅
U 1.187 BSC 30.15 BSC
V .131 .188 3.33 4.77
H
V
U
L
G
B
Q
1
2
omponents
20736 Marilla Street Chatsworth
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MCC
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Revision: 1 2003/04/21
