MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# MJ10012 Features * With TO-3 package NPN Silicon Power Darlington Transistor Maximum Ratings Symbol VCEO VCBO VEBO IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector power dissipation Junction Temperature Storage Temperature Rating 400 600 8.0 10 175 200 -65 to +200 TO-3 Unit V V V A W A N E C K O Electrical Characteristics @ 25 C Unless Otherwise Specified Symbol Parameter Min Max Units 400 --- Vdc D OFF CHARACTERISTICS VCEO(SUS) ICBO IEBO ICEO Collector-Emitter Breakdown Voltage (IC=200mAdc, IB=0) Collector-Base Cutoff Current (VCB=600Vdc,IE=0) Emitter-Base Cutoff Current (VEB=6.0Vdc, IC=0) Collector-emitter Cutoff Current (VCE=400V; IB=0) --- 1.0 mAdc --- 40 mAdc --- 1.0 mAdc U V L H 2 1 ON CHARACTERISTICS hFE VCE(sat) VBE(sat) 300 100 20 PIN 1. PIN 2. CASE. 2000 Output Capacitance (Vcb=10Vdc, IE=0, ftest=100kHz) tf Storage Time (VCC = 12 Vdc, IC = 6.0 Adc, IB1 = IB2 = 0.3 Adc) Fall Time (VCC = 12 Vdc, IC = 6.0 Adc, IB1 = IB2 = 0.3 Adc) BASE EMITTER COLLECTOR Vdc 1.5 2.0 2.5 Vdc 2.5 3.0 DIMENSIONS INCHES 350 pF 15 s 15 s SWITCHING CHARACTERISTICS ts B Q Forward Current Transfer ratio (IC=3.0Adc, VCE=6.0Vdc) (IC=6.0Adc, VCE=6.0Vdc) (IC=10Adc, VCE=6.0Vdc) Collector-Emitter Saturation Voltage (IC=3.0Adc, IB=0.6Adc) (IC=6.0Adc, IB=0.6Adc) (IC=10Adc, IB=2.0Adc) Base-Emitter Saturation Voltage (IC=6.0Adc, IB=0.6Adc) (IC=10Adc, IB=2.0Adc) DYNAMIC CHARACTERISTICS Cob G DIM A B C D E G H K L N Q U V MIN 1.550 ----.250 .038 0.55 .430 .215 .440 .665 ----.151 1.187 .131 MAX REF 1.050 .335 .043 0.70 BSC BSC .480 BSC .830 .165 BSC .188 MM MIN 39.37 ----6.35 0.97 1.40 10.92 5.46 11.18 16.89 ----3.84 30.15 3.33 MAX REF 26.67 8.51 1.09 1.77 BSC BSC 12.19 BSC 21.08 4.19 BSC 4.77 NOTE www.mccsemi.com Revision: 1 2003/04/21