NVMFS6H824N MOSFET - Power, Single N-Channel 80 V, 4.5 mW, 107 A Features * * * * * * Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H824NWF - Wettable Flank Option for Enhanced Optical Inspection AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 80 V 4.5 mW @ 10 V 107 A D (5,6) MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Symbol Value Unit Drain-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGS 20 V ID 103 A Parameter Continuous Drain Current RqJC (Notes 1, 3) TC = 25C Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2, 3) Steady State TC = 100C TC = 25C TC = 100C TA = 25C Power Dissipation RqJA (Notes 1 & 2) Pulsed Drain Current Steady State W 115 ID PD W 3.8 1.9 IDM 680 A TJ, Tstg -55 to + 175 C IS 96 A Single Pulse Drain-to-Source Avalanche Energy (IL(pk) = 7 A) EAS 736 mJ Lead Temperature for Soldering Purposes (1/8 from case for 10 s) TL 260 C Operating Junction and Storage Temperature Source Current (Body Diode) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter MARKING DIAGRAM A 19 14 TA = 100C TA = 25C, tp = 10 ms N-CHANNEL MOSFET 58 TA = 100C TA = 25C S (1,2,3) 82 PD G (4) Symbol Value Unit Junction-to-Case - Steady State RqJC 1.3 C/W Junction-to-Ambient - Steady State (Note 2) RqJA 39.8 1 DFN5 (SO-8FL) CASE 488AA STYLE 1 D S S S G D XXXXXX AYWZZ D D XXXXXX = 6H824N XXXXXX = (NVMFS6H824N) or XXXXXX = 824NWF XXXXXX = (NVMFS6H824NWF) A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface-mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. (c) Semiconductor Components Industries, LLC, 2018 July, 2019 - Rev. 1 1 Publication Order Number: NVMFS6H824N/D NVMFS6H824N ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 80 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current V 43 VGS = 0 V, VDS = 80 V mV/C TJ = 25C 10 TJ = 125C 100 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 140 mA 100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient VGS(TH)/TJ Drain-to-Source On Resistance Forward Transconductance RDS(on) 2.0 4.0 -7.2 VGS = 10 V gFS ID = 20 A VDS =15 V, ID = 20 A 3.7 V mV/C 4.5 75 mW S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 2470 VGS = 0 V, f = 1 MHz, VDS = 40 V 342 pF 11 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 40 V; ID = 30 A Threshold Gate Charge QG(TH) 7.4 Gate-to-Source Charge QGS 12 Gate-to-Drain Charge QGD Plateau Voltage VGP 4.7 td(ON) 20 VGS = 10 V, VDS = 40 V; ID = 30 A 38 nC 7.0 V SWITCHING CHARACTERISTICS (Note 5) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time tr td(OFF) VGS = 10 V, VDS = 64 V, ID = 30 A, RG = 2.5 W tf 52 ns 55 42 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25C 0.8 TJ = 125C 0.7 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 20 A 1.2 V 52 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A QRR 32 ns 19 67 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NVMFS6H824N TYPICAL CHARACTERISTICS 400 350 350 300 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 400 VGS = 10 V 6V 250 200 150 5V 100 50 0 1 2 5 4 3 6 7 200 150 100 0 8 TJ = 125C 0 2 3 TJ = -55C 4 5 7 6 8 9 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics TJ = 25C ID = 20 A 7 6 5 4 3 5 6 7 8 9 10 VGS, GATE-TO-SOURCE VOLTAGE (V) 10 6 TJ = 25C 5 4 VGS = 10 V 3 2 6 8 10 12 14 18 16 20 ID, DRAIN CURRENT (A) Figure 3. On-Resistance vs. Gate-to-Source Voltage Figure 4. On-Resistance vs. Drain Current and Gate Voltage 2.5 1M VGS = 10 V ID = 20 A TJ = 175C 100K 2.0 IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN-TO- SOURCE RESISTANCE 1 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 8 2 250 50 4V RDS(on), DRAIN-TO-SOURCE RESISTANCE (mW) RDS(on), DRAIN-TO-SOURCE RESISTANCE (mW) 0 TJ = 25C 300 1.5 1.0 TJ = 150C 10K TJ = 125C 1K TJ = 85C 100 0.5 -50 -25 0 25 50 75 100 125 150 175 10 TJ = 25C 5 15 25 35 45 55 65 75 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage www.onsemi.com 3 NVMFS6H824N TYPICAL CHARACTERISTICS VGS, GATE-TO-SOURCE VOLTAGE (V) 10,000 C, CAPACITANCE (pF) CISS 1000 COSS 100 10 1 CRSS VGS = 0 V TJ = 25C f = 1 MHz 10 0 20 30 40 50 60 70 80 10 9 8 7 6 QGS 5 QGD 4 3 VDS = 40 V TJ = 25C ID = 30 A 2 1 0 0 5 10 20 15 25 30 35 40 VDS, DRAIN-TO-SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate-to-Source Voltage vs. Total Charge 100 1000 td(off) tf tr 100 t, TIME (ns) IS, SOURCE CURRENT (A) VGS = 0 V td(on) 10 ID, DRAIN CURRENT(A) 1000 100 1 10 1 0.1 100 TJ = 125C TJ = 25C TJ = -55C 0.3 0.4 0.6 0.7 0.8 0.9 1.0 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 TC = 25C Single Pulse VGS 10 V TJ(initial) = 25C 10 ms 10 0.5 ms 1 ms 10 TJ(initial) = 100C 10 ms 1 0.1 0.5 RG, GATE RESISTANCE (W) IPEAK (A) 1 VGS = 10 V VDS = 64 V ID = 30 A 10 RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 100 1000 1 1E-05 1E-04 1E-03 VDS, DRAIN-TO-SOURCE VOLTAGE (V) TIME IN AVALANCHE (s) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 1E-02 NVMFS6H824N TYPICAL CHARACTERISTICS 100 Duty Cycle = 0.5 R(t) (C/W) 10 0.2 0.1 0.05 1 0.02 0.01 0.1 0.01 Single Pulse 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Characteristics DEVICE ORDERING INFORMATION Device Marking Package Shipping NVMFS6H824NT1G 6H824N DFN5 (Pb-Free) 1500 / Tape & Reel NVMFS6H824NWFT1G 824NWF DFN5 (Pb-Free, Wettable Flanks) 1500 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 NVMFS6H824N PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO-8FL) CASE 488AA ISSUE N 2X 0.20 C D 2 A B D1 2X 0.20 C 4X E1 2 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 3 q E c A1 4 TOP VIEW C SEATING PLANE DETAIL A 0.10 C A 0.10 C SIDE VIEW 0.10 b C A B 0.05 c RECOMMENDED SOLDERING FOOTPRINT* DETAIL A 2X 0.495 8X 4.560 2X 1.530 e/2 e L 1 4 3.200 K PIN 5 (EXPOSED PAD) G MILLIMETERS DIM MIN NOM MAX A 0.90 1.00 1.10 A1 0.00 --- 0.05 b 0.33 0.41 0.51 c 0.23 0.28 0.33 D 5.00 5.15 5.30 D1 4.70 4.90 5.10 D2 3.80 4.00 4.20 6.00 6.30 E 6.15 E1 5.70 5.90 6.10 E2 3.45 3.65 3.85 e 1.27 BSC G 0.51 0.575 0.71 K 1.20 1.35 1.50 L 0.51 0.575 0.71 L1 0.125 REF M 3.00 3.40 3.80 q 0_ --- 12 _ STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN E2 L1 4.530 M 1.330 2X 0.905 1 0.965 D2 4X 1.000 4X 0.750 BOTTOM VIEW 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 www.onsemi.com 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NVMFS6H824N/D