DMC3035LSD
Document number: DS31312 Rev. 3 - 2 1 of 7
www.diodes.com October 2008
© Diodes Incorporated
DMC3035LSD
NE W PRODUCT
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Features
• Complementary Pair MOSFETs
• Low On-Resistance
• N-Channel: 35mΩ @ 10V
61mΩ @ 4.5V
• P-Channel: 65mΩ @ -10V
• 115mΩ @ -4.5V
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 2)
• "Green" Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOP-8L
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Copper lead
frame. Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 6
• Ordering Information: See Page 6
• Weight: 0.072g (approximate)
SOP-8L
D
1
S
1
G
1
D
2
S
2
G
2
N-Channel MOSFET P-Channel MOSFET
S2
D1
S1
D2
G1
G2 D2
D1
Internal Schematic
TOP VIEW
TOP VIEW
Maximum Ratings N-CHANNEL @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain Source Voltage VDSS 30 V
Gate-Source Voltage VGSS ±20 V
Drain Current (Note 1) TA = 25°C
TA = 70°C ID 6.9
5.8 A
Pulsed Drain Current (Note 4) IDM 30 A
Maximum Ratings P-CHANNEL @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain Source Voltage VDSS -30 V
Gate-Source Voltage VGSS ±20 V
Drain Current (Note 1) TA= 25°C
TA = 70°C ID -5
-4.2 A
Pulsed Drain Current (Note 4) IDM -20 A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 1) PD 2 W
Thermal Resistance, Junction to Ambient RθJA 62.5 °C/W
Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C
Notes: 1. Device mounted on 2oz. copper pads on 2” x 2” FR4 PCB.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Repetitive rating, pulse width limited by junction temperature.
DMC3035LSD
Document number: DS31312 Rev. 3 - 2 2 of 7
www.diodes.com October 2008
© Diodes Incorporated
DMC3035LSD
NEW PRODUCT
Electrical Characteristics N-CHANNEL @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage BVDSS 30 ⎯ ⎯ V VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1 μA VDS = 24V, VGS = 0V
Gate-Source Leakage IGSS ⎯ ⎯ ± 100 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage VGS(th) 1 ⎯ 2.1 V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance RDS (ON) ⎯
⎯ 28
51 35
61 mΩ VGS = 10V, ID = 6.9A
VGS = 4.5V, ID = 5.0A
Forward Transfer Admittance |Yfs| ⎯ 7.7 ⎯ S VDS = 5V, ID = 6.9A
Diode Forward Voltage (Note 5) VSD 0.5 ⎯ 1.2 V
VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss ⎯ 384 ⎯ pF
Output Capacitance Coss ⎯ 67 ⎯ pF
Reverse Transfer Capacitance Crss ⎯ 48 ⎯ pF VDS = 15V, VGS = 0V, f = 1.0MHz
Gate Resistance RG ⎯ 1.3 ⎯ Ω VGS = 0V, VDS = 0V, f = 1MHz
SWITCHING CHARACTERISTICS
Total Gate Charge Qg ⎯ 4.3
8.6 ⎯ VDS = 10V, VGS = 4.5V, ID = 10A
VDS = 10V, VGS = 10V, ID = 10A
Gate-Source Charge Qgs ⎯ 1.2 ⎯ VDS = 10V, VGS = 10V, ID = 10A
Gate-Drain Charge Qgd ⎯ 2.5 ⎯
nC
VDS = 10V, VGS = 10V, ID = 10A
Electrical Characteristics P-CHANNEL @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage BVDSS -30 ⎯ ⎯ V VGS = 0V, ID = -250μA
Zero Gate Voltage Drain Current IDSS ⎯ ⎯ -1.0 μA VDS = -24V, VGS = 0V
Gate-Source Leakage IGSS ⎯ ⎯ ± 100 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage VGS(th) -1 ⎯ -2.1 V
VDS = VGS, ID = -250μA
Static Drain-Source On-Resistance RDS (ON) ⎯
⎯ 56
98 65
115 mΩ VGS = -10V, ID = -5A
VGS = -4.5V, ID = -4A
Forward Transfer Admittance |Yfs| ⎯ ⎯ 5.2 S
VDS = -10V, ID = -5A
Diode Forward Voltage (Note 5) VSD -0.5 ⎯ -1.2 V
VGS = 0V, IS = -2.6A
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss ⎯ 336 ⎯ pF
Output Capacitance Coss ⎯ 70 ⎯ pF
Reverse Transfer Capacitance Crss ⎯ 49 ⎯ pF VDS = -25V, VGS = 0V, f = 1.0MHz
Gate Resistance RG ⎯ 4.6 ⎯ Ω VGS = 0V, VDS = 0V, f = 1MHz
SWITCHING CHARACTERISTICS
Total Gate Charge Qg ⎯ 4.0
7.8 ⎯ VDS = 15V, VGS = -4.5V, ID = -5A
VDS = 15V, VGS = -10V, ID = -5A
Gate-Source Charge Qgs ⎯ 1.0 ⎯ VDS = 15V, VGS = -10V, ID = -5A
Gate-Drain Charge Qgd ⎯ 2.5 ⎯
nC
VDS = 15V, VGS = -10V, ID = -5A
Notes: 5. Short duration pulse test used to minimize self-heating effect.
DMC3035LSD
N-CHANNEL
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
01234
Fig . 1 Typical Out put Characteri st ics
V , DRAIN-SOURCE VOLTAGE (V)
DS
I, D
5
R
AIN
C
U
R
R
EN
T
(A)
D
V = 10V
GS
V = 4.5V
GS
V = 3.5V
GS
V = 3.0V
GS
V = 2.5V
GS
0
6
12
18
24
30
12345
Fig. 2 Typical Transfer Characteristics
V , GATE SOU RCE VO LTAGE (V)
GS
I, D
6
R
AIN
C
U
R
R
EN
T
(A)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 5V
Pulsed
DS
0.01
0.1
1
0 5 10 15 20 25 30
I , DRAIN-SOURCE CURRENT (A)
D
Fig 3 On-Resistance vs. Drain Current & Gate Voltage
R
, S
T
A
T
I
C
D
R
AIN-S
O
U
R
C
E
ON-RESISTANCE ( )
DS(ON)
Ω
V = 10V
GS
V = 4.5V
GS
0
0.02
0.04
0.06
0.08
0.1
02 4 6 81
I , DRAIN-SOURCE CURRENT (A)
D
Fig . 4 On - R esistance vs. Dr ain Curre nt & Temperature
NEW PRODUCT
0
R
, S
T
A
T
I
C
D
R
AI
N
-S
O
U
R
C
E
ON-RESISTANCE ( )
DS(ON)
Ω
V = 4.5V
GS
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0.6
0.8
1.0
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERA TURE (°C)
A
Fig. 5 Static D r ain-Sou r ce On - Resistance
vs. Ambie nt T e mperatu re
R
, S
T
A
T
I
C
D
R
AI
N
-S
O
U
R
C
E
ON-RESISTANCE ( )
DS(ON)
Ω
V = 10V
I = 10A
GS
D
V = 4.5V
I = 5A
GS
D
0
0.5
1.0
1.5
2.0
2.5
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERA TURE (°C)
A
Fig. 6 Gate Threshold Variation vs. Ambient Temperature
V,
G
ATE T
H
R
ES
H
O
LD V
O
LTA
G
E (V)
GS(TH)
I = 250µA
D
I = 1mA
D
DMC3035LSD
Document number: DS31312 Rev. 3 - 2 3 of 7
www.diodes.com October 2008
© Diodes Incorporated
DMC3035LSD
N-CHANNEL (continued)
0
4
8
12
16
20
0 0.2 0.4 0.6 0.8 1 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig . 7 Re verse Drain Curr ent vs. Sour ce-Drai n Voltage
I, S
O
U
R
C
E
C
U
R
R
E
N
T
(A)
S
T = 25°C
A
Fig. 8 Typical Total Capacitance
0 5 10 15 20 25 30
V , DRAIN-SOURCE VOLTAGE (V)
DS
10
100
1,000
C
,
C
A
P
A
C
I
T
AN
C
E (p
F
)
C
iss
C
rss
f = 1MHz
C
oss
0.001
0.01
0.1
1
0.00001
T - T = P * R (t)
Duty Cycle, D = t /t
JA JA
12
θ
R (t) = r(t) * R
R = 113°C/W
θθ
θ
JA JA
JA
P(pk) t
1
t
2
D = Single Pulse
D = 0.005
D = 0.02
D = 0.01
D = 0.05
D = 0.1
D = 0.5
D = 0.3
D = 0.9
D = 0.7
NEW PRODUCT
DMC3035LSD
Document number: DS31312 Rev. 3 - 2 4 of 7
www.diodes.com October 2008
© Diodes Incorporated
DMC3035LSD
P-CHANNEL
-
I
,
D
R
A
I
N
C
U
R
R
EN
T
(A
)
D
Fig. 10 Typical Output Characteristics
-V , DRAIN- SOURCE VOLTAGE (V)
DS
0
4
8
12
16
20
012345
V = -2.5V
GS
V = -4.5V
GS
V = -10V
GS
V = -1.5V
GS
V = -3.0V
GS
Fig . 11 Ty pical Transf er Character istics
-V , GATE SOURCE VOLTAGE (V)
GS
-I , D
R
AIN
C
U
R
R
EN
T
(A)
D
0
4
8
12
16
20
123456
V = -5V
DS
T = -55°C
A
T = 25°C
A
T = 125°C
A
T = 150°C
A
0.01
0.1
1
0481216
NEW PRODUCT
20
R
, S
T
A
T
I
C
D
R
AI
N
-S
O
U
R
C
E
ON-RESISTANCE ( )
DS(ON)
Ω
Fig. 12 Typical On-Resistance
vs . Dr ai n Current and Gate Volt age
-I , DRAIN CURRENT (A)
D
V = -4.5V
GS
V = -10V
GS
0
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0246810
R
, S
T
A
T
I
C
D
R
AI
N
-S
O
U
R
C
E
ON-RESISTANCE ( )
DS(ON)
Ω
Fig. 13 T ypical On-Resistance
vs . Dr ai n C ur r ent and Temperatu r e
-I , DRAIN CURRENT (A)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0.6
0.8
1.0
1.2
1.4
1.6
Fig. 14 On-Resistance V ariation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERA TURE (°C)
A
R , STATIC DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
DS(ON)
V = -4.5V
I = -4.2A
GS
D
V = -10V
I = -5.3A
GS
D
10
100
1,000
0 5 10 15 20 25 30
C
,
C
A
P
A
C
I
T
A
N
C
E (p
F
)
Fig. 15 T ypical Capacitance
-V , DRAIN-SOURCE VOL TAGE (V)
DS
C
iss
C
oss
C
rss
DMC3035LSD
Document number: DS31312 Rev. 3 - 2 5 of 7
www.diodes.com October 2008
© Diodes Incorporated
DMC3035LSD
P-CHANNEL (continued)
0.8
1.2
1.6
2.0
2.4
-V ,
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS(TH)
Fig. 16 Gate Threshold Variation vs. Ambient Temperature
T , AMBIENT TEMPERA TURE (°C)
A
-50 -25 0 25 50 75 100 125 150
I = -250µA
D
0
2
4
6
8
10
0.4 0.6 0.8 1 1.2
-V , SOURCE-DRAIN VOLTAGE (V)
SD
-I , S
O
U
R
C
E
C
U
R
R
E
N
T
(A)
S
Fig. 17 Diode Forward Voltage vs. Current
T = 25°C
A
NEW PRODUCT
Ordering Information (Note 6)
Part Number Case Packaging
DMC3035LSD-13 SOP-8L 2500/Tape & Reel
Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
( Top V i e w )
Logo
Part no.
Year: "07" =2007
"08" =2008
Xth week: 01~52
1 4
8 5
C3035LD
YY WW
Package Outline Dimensions
DMC3035LSD
Document number: DS31312 Rev. 3 - 2 6 of 7
www.diodes.com October 2008
© Diodes Incorporated
SOP-8L
Dim Min Max
A - 1.75
A1 0.08 0.25
A2 1.30 1.50
A3 0.20 Typ
b 0.3 0.5
D 4.80 5.30
E 5.79 6.20
E1 3.70 4.10
e 1.27 Typ
h - 0.35
L 0.38 1.27
θ 0° 8°
All Dimensions in mm
Gauge Plane
Seating Plane
Det ail ‘A’
Det ail ‘A’
E
E1
h
L
D
eb
A2
A1
A
45
°
7
°~
9
°
A3
0.254
DMC3035LSD
Suggested Pad Layout
X
C1
C2
Y
NEW PRODUCT
Dimensions Value (in mm)
X 0.60
Y 1.55
C1 5.4
C2 1.27
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume an y liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages. LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DMC3035LSD
Document number: DS31312 Rev. 3 - 2 7 of 7
www.diodes.com October 2008
© Diodes Incorporated
