SYNSEM! SEMICONDUCTOR $B170S thru SB1B0S Features @ MMetal-Semiconductor junction with guardring @ Epitaxial construction @ Low fonward voltage drop @ High current capability @ The plastic material carries UL recognition 94-0 @ For use in low voltage high frequency inverters free wheeling, and polarity protection applications Mechanical Data @ Case A405 molded plastic @ Polarity | Color band denotes cathode @ Weight : 0.008 ounce, 0.22 gram @ Mounting position : Any Maximum Ratings and Electrical Characteristics Ratings at 25C arnbient tarnperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive bad. For capacitive load, derate current by 209% Voltage Range 70 to 100 Volts 1.0 Amp. Schottky Barner Rectifiers A-405 AOT (2.7) 080 (2.0) DIA. Ll i Forward Current 1.0 Ampere - 1.0 (26.4) MIN. | 205 (5.2) - 166 (42) _! 1.0 (25.4) MIN. 025 (64) 027 (53) tom joo __ DA. Dimensions in inches and (millimeters) Parameter Symbob SB1708 SB1508 SB1908 SB1B05 Units Maximum repetitive peak reverse voltage Meee 7a aa a0 100 Volts Masimum RMS voltage Verses 49 66 63 70 Volts Masimum CC blocking voltage Veo 7O a0 go 400 Volts Maximum average fonyard rectified current 10 Amp 275" (9.5m) lead lengths @T,=100C ta , Peak fonvard sume current &.3rms single half sine wave bag 30,0 Amps superimposed on rated load WEDEC Method Masirnurn forward L=1.04,T =26C Vv OFg Volts voltage at L=1.0AT =100eC F 0.69 Maximum GC reverse current GT aC L O.6 rm at rated DC blocking voltage BT =100C 5.0 Typical junction capacitance (Note 14 c, 30 pF Typical thernal resistance Mote 2) Pag 36 oh Operating junction temperature range Ue -66 fo +125 oC Storage temperature range Tee -66 to +150 HE 1. Measured at 1.0MHz and applied reversevottage of 4.0 0. 2 Thennal Resistance Jundion te Lead. Notes:$B170S thru SB1B0S RATINGS AND CHARACTERISTIC CURVES FIG.1 - FORWARD CURRENT DERATING CURVE - FIG.2- MAXIMUM NON-REPETITIVE SURGE CURRENT 0 5 \ : 0 i o6 g \ 2 ~ Od 2 AL pocmcrarowere \ E = al 97 [9.378 (@ Sm) LEAD LENGTHS e agen Ban = ; 5 (JEDEC METHOD) o fe o be pe 2B 50 % 400 105 180 175 1 @ 5 2 0 100 LEAD TEMPERATURE ,'C NUMBER OF CYCLES AT GOHz FIG.3 - TYPICAL JUNCTION CAPACITANCE FIG.4 - TYPICAL FORWARD CHARACTERISTICS CAPACITANCE , (pF) = S = INSTANTANEOUS FORWARD CURRENT ,(A) Te2st 1 WIDTH 300ua 0.0 ot 1 4 10 100 QO az Oa o8 08 1.0 12 REVERSE VOLTAGE . VOLTS INSTANTANEOUS FORWARD VOLTAGE , VOLTS FIG.5 - TYPICAL REVERSE CHARACTERISTICS 001 INSTANTANEOUS REVERSE CURRENT (mA) o.001 Q 20 40 eo 60 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE , (%)