FMB175 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI FMB175 is a 28 V silicon NPN power transistor designed primarily for FM broadcast transmitters. Diffused emitter ballast provides high VSWR capability under rated operation conditions. PACKAGE STYLE .500 6L FLG A C 2 1 2x O N FU LL R D FEATURES: 4 3 * 28 V operation * PG = 9.0 dB at 175 W/108 MHz * OmnigoldTM Metalization System B E .725/18,42 F G M K H MAXIMUM RATINGS J I L M AXIM U M D IM M IN IM U M inches / m m inches / m m .150 / 3.43 .160 / 4.06 IC 16 A A VCBO 60 V C .210 / 5.33 .220 / 5.59 D .835 / 21.21 .865 / 21.97 VCEO 25 V VCES 60 V VEBO 4.0 V PDISS 230 W @ TC = 25 C .045 / 1.14 B E .200 / 5.08 .210 / 5.33 F .490 / 12.45 .510 / 12.95 G .003 / 0.08 TJ -65 C to +200 C TSTG -65 C to +150 C JC 0.75 C/W .725 / 18.42 I J .970 / 24.64 .980 / 24.89 K .090 / 2.29 .105 / 2.67 L .150 / 3.81 .120 / 3.05 1 = COLLECTOR .135 / 3.43 2&4 = EMITTER 3 = BASE ORDER CODE: ASI10589 TC = 25C NONETEST CONDITIONS SYMBOL .170 / 4.32 .285 / 7.24 M N CHARACTERISTICS .007 / 0.18 .125 / 3.18 H MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 100 mA 60 V BVCES IC = 100 mA 65 V BVCEO IC = 100 mA 25 V BVEBO IE = 10 mA 4.0 V ICES VCE = 28 V hFE VCE = 5.0 V COB VCB = 28 V PG C VCC = 28 V PIN = 22 W IC = 1.0 A 20 f = 1.0 MHz POUT = 175 W f = 108 MHz 9.0 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. 15 mA 150 --- 150 pF dB % REV. C 1/1