A D V A N C E D S E M I C O N D U C T O R, I N C. REV. C
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subj ect to change wi thout notice.
CHARACTERISTICS TC = 25°C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 100 mA 60 V
BVCES IC = 100 mA 65 V
BVCEO IC = 100 mA 25 V
BVEBO IE = 10 mA 4.0 V
ICES VCE = 28 V 15 mA
hFE VCE = 5.0 V IC = 1.0 A 20 150 ---
COB VCB = 28 V f = 1.0 MHz 150 pF
PG
η
ηη
ηC VCC = 28 V POUT = 175 W f = 108 MHz
PIN = 22 W
9.0
60 dB
%
NPN SILICON RF POWER TRANSISTOR
FMB175
DESCRIPTION:
The ASI FMB175 is a 28 V silicon
NPN power transistor designed
primarily for FM broadcast
transmitters. Diff used emitter ballast
provides high VSWR capability under
rated operat ion condit ions.
FEATURES:
• 28 V operation
• PG = 9.0 dB at 175 W/108 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 16 A
VCBO 60 V
VCEO 25 V
VCES 60 V
VEBO 4.0 V
PDISS 230 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +150 °C
θ
θθ
θJC 0.75 °C/W
PACKAGE STYLE .500 6L FLG
1 = COLLECTOR 2&4 = EMITTER 3 = BASE
ORDER CODE: ASI10589
MINIMUM
inches / mm
.490 / 12.45
.210 / 5.33
.003 / 0.08
B
C
D
E
F
G
A
MAXIMUM
.220 / 5.59
.007 / 0.18
.51 0 / 1 2.9 5
inches / mm
.72 5 / 1 8.4 2
H
DIM
K
L
I
J.97 0 / 2 4.6 4 .98 0 / 2 4.8 9
.170 / 4.32
N
M.120 / 3.05 .135 / 3.43
.150 / 3.43 .160 / 4.06
.125 / 3.18
.090 / 2.29 .105 / 2.67
.285 / 7.24
.150 / 3.81
.045 / 1.14
E
F
.725/18,42
I
G
J
KL
M
A
D
C
B
2x Ø N
FULL R
H
.83 5 / 2 1.2 1 .865 / 2 1 .9 7
.210 / 5.33.200 / 5.08
1
2
3 4
