2 SC 3576 Say Si-N 30/25V, hi-Ueb=15V, 0,3/0,5A, 0,5W, 250MHz 41c 2803068, 2SC3836 . hi-hFE=800...3200, lo-sat<0,5V(0,2A) oe 7 Oe ee 2 SC 3577 Mat Si-N S P, 850/650V, 5/10A, 80W, 6MHz, <1/3pus ___ 6c _ {TOP-3F) (BUW11A)3 18) BUW 11F, 2504300, 2804457 _ 2 SC 3578 Hit Si-N SMD, S, 40/15V, 0,1A, <40/70ns 35a SOT-23 : oe 2 SC 3579 Shi Si-N S P, 800/800V, 6/12A, SOW, 8MHz, <0,5/3,7p1s 17} TO-220 BUTI1A AW BUT 11A, BUV 46A, 203050, 2503047++ _ 2 SC 3580 Mit Si-N LF Drv,Out, 25/20V, 0,7/1A, 0,9W, 180MHz {2SA1398 7c(9mm) _ TO-92L BC 337 7a BC 337...338, 2502236, 2SD863, 25D1331,++ 2803581 Mit: __ SEN LF Drv,Out, 55/50V, 0,4/0,6A, 0,9W, 150MHz -12SA1399 7c(9mm) _TO-92L BC 639 7c BC 637, 2503939, 2SD863, 2SD1937, ++ _ 2 SC 3582 Nec Si-N UHF, 20/10, 65mA, 0,6W, 8GHz, F=1,2dB(1GHz} 7f T0-92 - 2 SC 3583 Nec Si-N SMD, UHF, 20/10V, 65mA, 9GHz, F=1,2dB(1GHz) 3a SOT-23 - 2 SC 3584 Nec Si-N UHF, 20/10V, 65mA, 0,2W, 9GHz, F=1,2dB(1GHz) 25q =0T-103 - 2 SC 3585 Nec Si-N SMD, UHF, 20/10V, 35mA, 10GHz, F=1,8dB(2GHz) 35a SOT-23 - 2 SC 3586 Nec Si-N UHF, 20/10V, 35mA, 0,25W, 10GHz, F=1,8dB(900MHz) 25q =0T-103 2 SC 3587 Nec Si-N UHF, 20/10V, 35mA, 0,58W, 10GHz, F=1,7dB(2GHz) Sis SOT-173 : . : 2 SC 3588 Nec Si-N S P, 500/400, 0,5/1A, 10W, <1/3,5ps {2SA1400 30) TO-251 {BUX 85)6 17j 2503075, 2503129, 2SC4499, (BUX 84...85)6 Z: T0-252 2 SC 3589 Say Si-N HA, hi-def, 250/100V, 7/154, 40W, 10MHz 17j TO-220 (BU 406) 17j (BU 406...408, 2863173, 2803175} lo-sat<0,8V(5A) 2 SC 3590 Say Si-N HA, hi-def, 330/150V, 7/12A, 50W, 40MHz 17j T0-220 (BU 406) 17j (BU 406...408, 2863173, 2503175} lo-sat<0,8V(5A) 2 SC 3591 Say Si-N =28C3690: 400/200V . 17j TO-220. (BU 406) A (BU 406, BU 408, 2503175) oe 2 SC 3592 Nec Si-N LES P, 60/60V, 5A, 10W, <1/3,5us _ _ 30} 70-251/252 (BD 243 C)4 VW 2803074, 2503518, 2501803,(BDV 10...12++)4 2 SC 3593 Mat __ Si-N SP, 850V, 25A, 150W, <3/2,5us _ 23a 10-3 _ BUS 14(A), BUS 98(A) _ 283504 Hit __Si-N SP, 1400/650V, 8A, SOW, <500/5,5us 23a TO-3_ BU 508 A 18) BU 508(A)}, BU 908, MJ 8505, 264284...85 2 SC 3595 Say Si-N Vid Out, hi-def, 30/20V, 0,5/1A, 5W, 2GHz 14h TO-126 - 2 SC 3596 Say Si-N Vid, hi-def, 80/60V, 0,3/0,6A, 8W, 700MHz {28SA1402 14h TO-126 2803599 14h 2803599, 283951 2 SC 3597 Say Si-N Vid, hi-def, 80/60V, 0,5/1A, 10W, 800MHz {28A1403 14h TO-126 2803597 14h 2803952 2 SC 3598 Say Si-N Vid, hi-def, 120/120V, 0,2/0,4A, 8W, S0OMHz = {2SA1404 14h TO-126 2803599 14h 2803599, 2563953 2 SC 3599 Say SiN Vid, hi-def, 120/120V, 0,3/0,6A, 8W, 500MHz = {2SA1405 14h TO-126 2803599 14h 2803954 2 SC 3600 Say Si-N Vid, hi-def, 200/200V, 0,1/0,2A, 7W, 400MHz (2SA1406 14h T0-126 2803601 14h 2803601, 2503955 2 SC 3601, Say Si-N Vid hi-def,200/200V, 0,15/0,3A, 7W, 400MHz {2SA1407 14h TO-126 28C3601 14h 2803956 oe _ 2 SC 3602 Tos Si-N UHF, 25/20V, 0,02A, 0,2W, 1100MHz, Gp=18dB(800MHz) 25p SOT-103_ 2802466 25p 2862464, 2802466, 2802144, 2802360, ++ 2 SC 3603 Nec Si-N - UHF, 20/42V, 0,1A, 0,58W, 7GHz, F<3,4dB(2GHz) 51s SOT-173 2803358 2 SC 3604 Nec Si-N UHF, 20/16V, 0,065A, 0,58W, 8GHz, F<2,3dB(2GHz) 5is SOT-173 i 2803358 2 SC 3605 Tos Si-N UHF, 20/1 2V, 0,084, 0,6W, 6.5GHz, F<3dB(1GHz) Ti =10-92 2803355 Ii 28C2570(A), 203037, 2503512, 2803355 2 SC 3606 Tos Si-N =28C3605: SMD, 7GHz, F<2dB(tGHz) 35a SOT-23 2803356 35a BFR 193, 2863356, 2503445, 2805084 2 SC 3607 Tos Si-N =2C3605: SMD 39b SOT-89 BFQ 193, 2$C3301, 25C3357...58, 2804988 2 SC 3608 Tos Si-N =2503605: 7GHz, F<2dB(1GHz) 25q SOT-103 BFQ 82, 26C2876, 2503358 2 SC 3609 Tos Si-N =2$C3605: SMD, 7GHz, F<2dB(1GHz) 44u $0T-143 _ _ - _ 2 SC 3610 Mat Si-N Vid P, hi-res, 110/50V, 0,15/0,3A, 10W, 300MHz 17] TO-220 2803782 17j 2803781 2 SC 3611 Mat Si-N =2803610:4W _ 14h TO-126 _ 2803598...99 __ 2 SC 3612 Tos Si-N Vid, hi-res, 180/150V, 0,3/0,5A, 20W, 400MHz {83746 17) TO-220 : : _ 2 $C 3613 Tos __Si-N Vid Drv, hi-res,20/18V, 0,5/0,8A, SW, 3500MHz 14b TO-126 Iso : - 280 3614 Hit Si-N SMD, VHF/UHF, 20/15V, 0,14, Gp>6dB(90OMHz) 39b SOT-89 _ : ee 2 SC 3615 Nec Si-N 50/50V, hi-Ueb=15V, 0,3/0,5A, 220MHz 7 T0-92 2503836, 2$D1915 hi-hFE=800...3200, 150/1100ns 2 SC 3616 Nec Si-N 25/25V, hi-Ueb=15V, 0,7/1A, 250MHz 7c T0-92 2803070, 2804204, 2SD1582 hi-hFE=800...3200, 130/1100ns 2 SC 3617 _ Nec Si-N =2$03615: SMD 39b SOT-89 - 2 SC 3618 Tos Si-N _=2803616: SMD 39b SOT-89 ; 2803650 2 SC 3619 Tos Si-N Vid P,CTV-HA Drv,300/300V, 0,14, >SOMHz 14b 70-126 Iso (BF 471)3 14h 2803789...90, (BF 758...759, MPS-U10,++)4 2SC 3620 Tos Si-N Vid P,CTV-HA Drv,300/300V, 0,14, >5O0MHz 14b 70-126 Iso (BF 471}8 14h 2803789...90, (BF 758...759, MPS-U10,44)4 2 SC 3621 Tos Si-N CTV-HA, LF P, 150/150V, 1,5A, 10W, 100MHz {2SA1408 14b 70-126 Iso (2803117)3 14h 2803902, (2803117, 25D669, 2SD781}3 2 SC 3622(A) Nec Si-N 60/50V, hi-Ueb=12V, 0,15A, 0,25W, 250MHz 7 TO-92 2803071 7(9mm) 2503069, 2503836 hi-hFE=1000....3200, 130...1220ns 2 SC 3623(A} Nec Si-N =2803622: 40c (SST) 2803071 7c(9mm) 2503069, 2$C3836 2 SC 3624(A) Nec Si-N =28C3622:SMD . 3a SOT-23 2803689 ee oe 2 SC 3625 Tos Si-N SP, DC-DC Conv., 500/400V, 8/10A, 60W, <1/3,5us 17j T0-220 BUT 56A 17j BUT 54, BUT 56(A}, 2803562, 2504107, ++ 2 SC 3626 Tos Si-N =2803625: 40W 17 _SOT-186 BUT 12 AF 17 2803574...75, 2803890, 2804130, 2SC4161++ 2 SC 3627 Tos __Si-N -Reg, 250/200V, 10/15A, 40W, <1/3,5us 17 SOT-186 2803572, 28C3575, 2804162, 28D1795, ++ 2 SC 3628 Mit Si-N VHF P, 35/17V, 2A, PQ=6,5W(175MHz/13,5V) 58s - 2 SC 3629 Mit Si-N UHF P, 20/9V, 1A, PQ=1,5W(520MHz/7,2V) 58s - 2 SC 3630 ee SiN UHF P, 35/17V, 1A, PQ=3,3W(520MHz/7,2V) 58s _ - _ _ 2 SC 3631(Z) Nec Si-N S P, 500/400V, 2/4A, 10W, 50MHz, (2SA1412 30] T0-251 2803233, (BUV 93...94)6 <0,5/2,7ys Z: 70-252 2 SC 3632(Z) Nec Si-N S P, 600/600V, 1/2A, 10W, 30MHz {28A1413 30} TO-251/252 2803363 . <0,5/5,54s a EB T0-252_ _ - . _ 2 SC 3633 Say Si-N+Di =2SC3636: integr. Damper-Diode 18) TO-3P 2803639 2 SC 3634 Say Si-N+Di =2$(3637: integr. Damper-Diode 18) T0-3P 2803640 2 SC 3635 Say Si-N4+Di =28C3638: integr. Damper-Diode 18) TO-3P 2803641 2 SC 3636 Say Si-N HA, hi-def, 900/500V, 7/14A, 80W, sat<2V(4A) 18) TO-3P 2803688 18) 2803643 2 SC 3637 Si-N HA, hi-def, 900/S00V, 10/20A, SOW, sat<2V(5A) 18) TO-3P 2503688 18) 2803644 2 $C 3638 Say _Si-N ___HA, hi-def, 900/500V, 15/25A, 100W, sat<2V(7A) 18) TO-3P . ee 2 SC 3639 Say Si-N+Di =28C3642: integr. Damper-Diode 18) TO-3P - 2 SC 3640 Say Si-N+Di =25C3643: integr. Damper-Diode 18) T0-3P - 2 SC 3641 Say Si-N+Di =2803644: integr. Damper-Diode 18) TO-3P - 2 SC 3642 Say Si-N HA, hi-def, 1200/800V, 6/12A, 100W, sat<5V(4A) 18) TO-3P 2SC3686...87 2 SC 3643 Say Si-N HA, hi-def, 1200/800V, 8/16A, 140W, sat<5V(6A) 18) TO-3P 2803466 18) 2503466 28C 3644 _ Say_ SiN HA, hi-def, 1200/800V, 12/25A, 150W, sat<5V(8A) 18) TO-3P - _ 2SC 3645 Say Si-N SMD, 180/160V, 0,14/0,2A, 150MHz {2SA1415 39b $01-89 BFN 16, BFN 18 _ . 2 SC 3646 Say Si-N _ SMD, 120/400V, 1/2A, 120MHz, 80/900ns {2SA1416 39b SOT-89 . 2863647, 2504132, 2504373, 25D1418...19 2 SC 3647 Say _Si-N ___SMD, 120/100V, 2/3A, 120MHz, 80/1050ns {2SA1417_ 39b SOT-89 2804132 _ 2 SC 3648 Say Si-N SMD, 180/160\, 0,7/1,5A, 120MHz, 50/1060ns {2SA1418 39b SOT-89 2803649, 26D1420...1421 2 SC 3649_ Say Si-N SMD, 180/160V, 1,5/2,5A, 120MHz, 40/1280ns_{2SA1419 39b SOT-89 28D1420...1421 _ 2 SC 3650 Say Si-N SMD, 30/25V, hi-Ueb=15V, 1,2/2A, 220MHz 39b SOT-89 (28D1950) hi-hFE=800...3200 2 SC 3651 Say Si-N SMD, 120/T00V, hi-Ueb=15V, 0,2/0,3A, 150MHz 39b SOT-89 - ee hi-hFE=500...3200 _ 28036520 Hit, SEN HE P, 30/20V, 0,3/0,5A, SW, 1200MHz 14h T0-126 - 2 SC 3653 Say SI-N+R =28C3399: 0,4 f2SA1420 7c 70-92 2803399 -+2803399 - 2 SC 3654 Say Si-N+R =2803400: 0,4W {2SA1421 7c TO-92 ->2803400 -+2803400 2 SC 3655 Say Si-N+R =2803401: 0,4W (2SA1422 7c TO-92 ~2803401 2803401 2 SC 3656 Say ___ Si-N+R =2803402: 0,4W ; {28A1423 7c T0-92 2803402 7280340200 oe 2 SC 3657 Tos Si-N S$ P, 900/800V, 4/8A, 80W, <1/3,5ys 18] TO-3P BUW 11A 18} BUW 11A, 2803153, 2803232, 2$C3535, ++