cave aacesioeconracr p-channel JFET gs Sd SAND ARE SYMETRICAL PITTI Siliconix = Analog Switches BENEFITS: a Commutators @ Low Insertion Loss in Switching Systems = Choppers Ron < 75 2 (2N5114) Reo = Integrator Reset Switch @ Short Sample and Hold Aperture Time Crss < 7 pF High Off-tsolation I p(o) < 500 pA TYPE PACKAGE PRINCIPAL DEVICES Single TO-18 2N5018-19, 2N5114-16, U304-6 Single TO-92 J174-7, J270-1, P1086-87, P1036E ALL DIMENSIONS WW INGHES Single TO-92 Lead-form J174-18 - 177-18, J270-18 - 271-18 (ALL DIMENSIONS IN MILLIMETERS} P41 086-18 - 87-1 8 Single Chip 2N5018CHP-19CHP, 2N5114CHP-16CHP U304CHP-6CHP, P1086CHP-87CHP . J HP- HP PERFORMANCE CURVES (25C unless otherwise noted) 270CHP-271C Common-Source Output Conductance Equivalent Input Noise Voltage and Output Characteristic vs Drain Current Noise Current vs Frequency -100 1 1K 10783 = Vos *- =! z @f=4 = 9,0 mA =z! g -80 5 1 = s 3 5 8 = 100 194 & a -60 = o 3 oe ve t c > 2 Fe 2 3 2 3 a 3 -40 8 au 5 5 5 2 10 08 S 4 E 2 3 > 2 -20 8 z arma a i 1 10-76 9 2 4 -6 8-10 01 0.4 1.0 -10 10 100 1K 10K 100K Vrs - DRAIN-SOURCE VOLTAGE (VOLTS) Ip - DRAIN CURRENT (mA} f FREQUENCY (Hz) Saturation Drain Current and Common-Source Capacitance Drain-Source ON Resistance Transfer Characteristics vs Gate-Source Voltage vs. Gate-Source Cutoff Voltage ~ 100 __ 100 100- < & < 5 g = 2 -80 = Z 80 a 2 = z a & ~60 a 2 60 2 = 8 rps @ Ip = 1002A, 2 3 < 10 2 =0 a Z 2 z Z 5 4 8 6 2 20 3 2 3 5 =o 4 2 Q 0 2 4 6 & 10 0 2 4 6 8 10 a 2 4 6 a 10 Vas GATE-SOURCE VOLTAGE (VOLTS) Vas GATE-SOURCE VOLTAGE (VOLTS) Vasiorr) GATE-SOURCE CUTOFF VOLTAGE {VOLTS} Transconductance Gate Operating Current Characteristics vs Drain-Gate Voltage z= 1 i 3 3 z < 8 3 a oO og z E i 4 w c a - & a g e 0 = Go = = 1 = 2 2 0 z 0 z 4 6 8 10 > 720-30. -40~C 0 Vas - GATE-SOURCE VOLTAGE (VOLTS} Vpg ORAINGATE VOLTAGE (VOLTS} 3 =e x 1979 Siliconix incorporated 5-39